IP Library Granted Patent US 11,242,714
Granted Patent B2
US 11,242,714 · App. 16/849,725 · Granted Feb 8, 2022

Polycrystalline diamond compacts having leach depths selected to control physical properties and methods of forming such compacts

Inventors: Danny E. Scott (Montgomery, TX); Wanjun Cao (The Woodlands, TX)
Assignee: Baker Hughes Holdings LLC
E21B10/567B24D18/0009E21B10/55
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Quick Facts
Patent No.
US 11,242,714
App. No.
16/849,725
Granted
Feb 8, 2022
Kind
B2
Abstract

A method of forming a polycrystalline diamond compact includes forming a polycrystalline diamond material at a temperature and a pressure sufficient to form diamond-to-diamond bonds in the presence of a catalyst; substantially removing the catalyst from a volume of the polycrystalline diamond material from a first surface to a first leach depth; and substantially removing the catalyst from a volume of the polycrystalline diamond material from a second surface to a second, different leach depth. A polycrystalline diamond compact includes a polycrystalline diamond material having a first volume, a second volume, and a boundary between the first volume and the second volume. The first volume includes a catalyst disposed in interstitial spaces between diamond grains. The second volume is substantially free of the catalyst. The boundary's location is selected to control thermal stability and/or impact resistance.

Claims (30)

1. A polycrystalline diamond compact, comprising:

a polycrystalline diamond material comprising a first volume, a second volume, and a boundary between the first volume and the second volume;

the first volume comprising a plurality of diamond grains bonded to one another by diamond-to-diamond bonds and a catalyst disposed in interstitial spaces between the diamond grains;

the second volume comprising a plurality of diamond grains bonded to one another by diamond-to-diamond bonds, wherein the second volume is substantially free of the catalyst; and

the boundary comprising a first leach depth from a first surface of the polycrystalline diamond material and a second leach depth from a second surface of the polycrystalline diamond material, the second leach depth different than the first leach depth, the first leach depth and the second leach depth each selected to control at least one of thermal stability and impact resistance.

2. The polycrystalline diamond compact of claim 1 , wherein the polycrystalline diamond material is secured to a supporting substrate.

3. The polycrystalline diamond compact of claim 1 , wherein the polycrystalline diamond material comprises a freestanding structure.

4. The polycrystalline diamond compact of claim 1 , wherein the first surface comprises a cutting face of the polycrystalline diamond material, and wherein the second surface comprises a side surface of the polycrystalline diamond material.

5. The polycrystalline diamond compact of claim 4 , wherein the second leach depth is greater than the first leach depth.

6. An earth-boring tool comprising:

a bit body; and

the polycrystalline diamond compact of claim 4 .

7. The polycrystalline diamond compact of claim 1 , wherein the diamond grains comprise nanodiamond grains.

8. The polycrystalline diamond compact of claim 1 , wherein the boundary comprises a third leach depth from a third surface of the polycrystalline diamond material.

9. The polycrystalline diamond compact of claim 8 , wherein the third leach depth is equal to the first leach depth or the second leach depth.

10. A method of forming a polycrystalline diamond compact, the method comprising:

forming a polycrystalline diamond material from diamond particles at a temperature and a pressure sufficient to form diamond-to-diamond bonds in the presence of a catalyst;

substantially removing the catalyst from a first volume of the polycrystalline diamond material adjacent a cutting face of the polycrystalline diamond material to a first leach depth to form a first leached region adjacent an unleached region in the polycrystalline diamond material, the unleached region comprising another volume of the polycrystalline diamond material retaining the catalyst therein; and

substantially removing the catalyst from a second volume of the polycrystalline diamond material adjacent a side surface of the polycrystalline diamond material to a second leach depth to form a second leached region adjacent the unleached region in the polycrystalline diamond material, the second leach depth being different than the first leach depth.

11. The method of claim 10 , wherein forming a polycrystalline diamond material comprises forming the polycrystalline diamond material on a supporting substrate.

12. The method of claim 10 , wherein forming a polycrystalline diamond material comprises forming the polycrystalline diamond material as a freestanding structure.

13. The method of claim 10 , further comprising:

removing the catalyst through the side surface without substantially removing the catalyst through the cutting face; and

removing the catalyst through the side surface and the cutting face simultaneously.

14. The method of claim 13 , further comprising masking the cutting face before removing the catalyst through the side surface without substantially removing the catalyst through the cutting face.

15. The method of claim 10 , further comprising providing a backfill material into the volume of the polycrystalline diamond material.

16. The method of claim 15 , wherein the catalyst and the backfill material each comprise substantially the same material.

17. The method of claim 15 , wherein the backfill material exhibits a coefficient of thermal expansion lower than a coefficient of thermal expansion of the catalyst.

18. The method of claim 10 , wherein the second leach depth is greater than the first leach depth.

19. The method of claim 10 , wherein the diamond particles comprise nanodiamond particles.

Assignments (1)
CHANGE OF NAME Recorded Dec 3, 2020
From: BAKER HUGHES, A GE COMPANY, LLC
To: BAKER HUGHES HOLDINGS LLC
Reel/Frame 054586/0540 →
Continuity (2)
Division 14815608 · Jul 31, 2015
Related Publication 20200240216A1 · Jul 30, 2020