Integrated system-in-package with radiation shielding
A system in a package (SIP) includes carrier layer regions that have a dielectric material with a metal post therethrough, where adjacent carrier layer regions define a gap. A driver IC die is positioned in the gap having nodes connected to bond pads exposed by openings in a top side of a first passivation layer, with the bond pads facing up. A dielectric layer is on the first passivation layer and carrier layer region that includes filled through vias coupled to the bond pads and to the metal post. A light blocking layer is on sidewalls and a bottom of the substrate. A first device includes a light emitter that has first bondable features. The light blocking layer can block at least 90% of incident light. The first bondable features are flipchip mounted to a first portion of the bond pads.
1. A system in a package (SIP), comprising:
carrier layer regions comprising a dielectric material with at least one metal post therethrough, adjacent ones of the carrier layer regions defining a gap having dimensions sufficient for placement of a driver integrated circuit (IC) die within the gap;
the driver IC die within the gap comprising a substrate having circuitry configured for a function with nodes connected to bond pads exposed by openings in a top side of a first passivation layer, wherein the driver IC die is positioned with the bond pads facing up;
a dielectric layer on the first passivation layer and on the carrier layer region including filled vias therethrough coupled to the bond pads and to the metal post;
a light blocking layer on sidewalls and on a bottom side of the substrate;
a first device including a light emitter for emitting light at a wavelength having first bondable features thereon; and
wherein the first bondable features are flipchip mounted comprising a solder connection to a first portion of the bond pads.
2. The SIP of claim 1 , wherein the light blocking layer has a thermal conductivity at 20° C. of at least 10 W/m·K and blocks at least 90% of the light that is incident thereon.
3. The SIP of claim 1 ,
further comprising a second device having second bondable features positioned lateral to the first device,
wherein the second bondable features are flipchip mounted comprising the solder connection to a second portion of the bond pads.
4. The SIP of claim 1 , further comprising a second passivation layer on the first passivation layer, and an additional light blocking passivation layer on the second passivation layer.
5. The SIP of claim 1 , further comprising a light blocking adhesive layer on the first passivation layer and a second passivation layer on the light blocking adhesive layer.
6. The SIP of claim 1 , further comprising a layer of backside metal on a back side of the driver IC die.
7. The SIP of claim 3 , wherein the second device comprises a resistor, capacitor, or an inductor.
8. The SIP of claim 1 , wherein the light emitter comprises a semiconductor laser or a light-emitting diode (LED), and wherein the wavelength is 500 nm to 2000 nm.
9. The SIP of claim 1 , wherein the light blocking layer comprises a metal, a metal alloy, or a polymer including carbon loading at a loading level of at least 1 weight %.
10. The SIP of claim 1 , wherein the dielectric layer includes carbon loading at a loading level of at least 1 weight % for light blocking.
11. A system in a package, comprising:
a leadframe including a die pad and a plurality of leads or lead terminals, where the die pad and the leads or lead terminals are separated by a mold compound;
a driver integrated circuit (IC) die on the die pad comprising a substrate having circuitry configured for a function with nodes connected to a plurality of bond pads including a first bond pad, wherein the driver IC die is positioned on the die pad with the plurality of bond pads facing up;
a patterned redistribution layer (RDL) over a top side of the driver IC die;
a mold compound on sides of the driver IC die having metal posts throughout its thickness attached to the leads or the lead terminals;
wherein the RDL includes a first portion over the first bond pad, and traces between some of the plurality of bond pads and the metal posts;
a first device including a light emitter for emitting light at a wavelength having first bondable features on the first portion of the RDL; and
wherein the RDL blocks at least 90% of the light that is incident thereon.
12. The SIP of claim 11 , wherein the RDL has a thermal conductivity at 20° C. of at least 10 W/m·K and blocks at least 90% of the light that is incident thereon.
13. The SIP of claim 11 ,
further comprising a second device having second bondable features positioned lateral to the first device,
wherein the second bondable features are flipchip mounted comprising the solder connection to a second portion of the bond pads.
14. The SIP of claim 11 , further comprising a layer of backside metal on a back side of the driver IC die.
15. The SIP of claim 13 , wherein the second device comprises a resistor, capacitor, or an inductor.
16. The SIP of claim 11 , wherein the light emitter comprises a semiconductor laser or a light-emitting diode (LED), and wherein the wavelength is 500 nm to 2000 nm.
17. The SIP of claim 11 , wherein the RDL comprises a metal, a metal alloy, or a polymer including carbon loading at a loading level of at least 1 weight %.
18. The SIP of claim 11 , wherein the RDL includes carbon loading at a loading level of at least 1 weight % for light blocking.
19. The SIP of claim 11 , further including metal pillars on the bond pads.
20. A system in a package (SIP), comprising:
carrier layer regions comprising a dielectric material with at least one metal post therethrough, adjacent ones of the carrier layer regions defining a gap having dimensions sufficient for placement of a driver integrated circuit (IC) die within the gap;
the driver IC die within the gap comprising a substrate having circuitry configured for a function with nodes connected to bond pads exposed by openings in a top side of a first passivation layer, wherein the driver IC die is positioned with the bond pads facing up;
a dielectric layer on the first passivation layer and on the carrier layer region including filled vias therethrough coupled to the bond pads and to the metal post;
a light blocking layer on sidewalls and on a bottom side of the substrate at 20° C. of at least 10 W/m·K;
a first device including a light emitter for emitting light at a wavelength having first bondable features thereon;
wherein in the light blocking layer blocks at least 90% of the light that is incident thereon; and
wherein the first bondable features are flipchip mounted comprising a solder connection to a first portion of the bond pads.