Charged particle beam device
Even when the amount of overlay deviation between patterns located in different layers is large, correct measurement of the amount of overlay deviation is stably performed. The charged particle beam device includes a charged particle beam irradiation unit that irradiates a sample with a charged particle beam, a first detection unit that detects secondary electrons from the sample, a second detection unit that detects backscattered electrons from the sample, and an image processing unit that generates a first image including an image of a first pattern located on the surface of the sample based on an output of the first detection unit, and generates a second image including an image of a second pattern located in a lower layer than the surface of the sample based on an output of the second detection unit. A control unit adjusts the position of a measurement area in the first image based on a first template image for the first image, and adjusts the position of a measurement area in the second image based on a second template image for the second image.
1. A charged particle beam device comprising:
a charged particle beam irradiation gun that irradiates a sample with a charged particle beam;
a first detector that detects secondary electrons from the sample;
a second detector that detects backscattered electrons from the sample;
at least one processor programmed to generate a first image including an image of a first pattern located on a surface of the sample based on an output of the first detector, and generate a second image including an image of a second pattern located in a lower layer than the surface of the sample based on an output of the second detector; and
wherein the at least one processor is programmed to adjust a position of a measurement area in the first image based on a first template image for the first image, and adjust a position of a measurement area in the second image based on a second template image for the second image.
2. The charged particle beam device according to claim 1 ,
wherein the at least one processor is programmed to calculate the amount of overlay deviation between the first image and the second image in accordance with a result of adjusting the position of the measurement area.
3. The charged particle beam device according to claim 1 ,
wherein the at least one processor is programmed to generate the first template image based on the first image and generate the second template image based on the second image.
4. The charged particle beam device according to claim 3 , wherein
the at least one processor generates the second template image for each of a plurality of layers when the second image includes images of the plurality of layers.
5. The charged particle beam device according to claim 4 , wherein
the at least one processor is configured to be able to set a mask area in a part of the second image.
6. The charged particle beam device according to claim 3 , wherein
the at least one processor is configured to set a plurality of template areas for one image included in the second image, and to be able to generate the second template image based on the plurality of template areas.
7. The charged particle beam device according to claim 3 , wherein
the at least one processor is configured to employ one of a plurality of second template images according to a matching rate with the second image when generating the plurality of second template images for the second image.
8. The charged particle beam device according to claim 1 , wherein
when adjusting the position of the measurement area at one measurement point, the at least one processor determines an offset amount and an offset direction at the one measurement point according to the offset amount and the offset direction obtained at a measurement point in the vicinity where the measurement is completed.
9. A charged particle beam device comprising:
a charged particle beam irradiation gun that irradiates a sample with a charged particle beam;
a first detector that detects secondary electrons from the sample;
a second detector that detects backscattered electrons from the sample;
at least one processor programmed to generate a first image including an image of a first pattern located on a surface of the sample based on an output of the first detector, and generate a second image including an image of a second pattern located in a lower layer than the surface of the sample based on an output of the second detector; and
wherein the at least one processor is programmed to adjust a position of a measurement area in the first image and adjusts a position of a measurement area in the second image, wherein
when adjusting the position of the measurement area at one measurement point, the at least one processor determines an offset amount and an offset direction at the one measurement point according to the offset amount and the offset direction obtained at a measurement point in the vicinity where the measurement is completed.