IP Library › Granted Patent US 11,094,679
Granted Patent B2
US 11,094,679 · App. 16/853,847 · Granted Aug 17, 2021

White light source system

Inventors: Masahiko Yamakawa (Yokohama, JP); Noriaki Yagi (Yokohama, JP); Kumpei Kobayashi (Yokohama, JP)
Assignees: Kabushiki Kaisha Toshiba; Toshiba Materials Co., Ltd.
H01L25/0753F21S2/00H01L33/00H01L33/50H01L33/504H01L33/507H01L33/54H01L33/56H05B45/20H05B47/10H05B47/16F21W2131/405F21Y2113/13F21Y2115/10
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Quick Facts
Patent No.
US 11,094,679
App. No.
16/853,847
Granted
Aug 17, 2021
Kind
B2
Abstract

According to one embodiment, there is provided a white light source system. P(λ), B(λ) and V(λ) satisfy an equation (1) below in a wavelength range of 380 nm to 780 nm. The white light source system satisfies an expression (2) below in a wavelength range of 400 nm to 495 nm: ∫ 380 780 P (λ) V (λ) dλ=∫ 380 780 B (λ) V (λ) dλ   (1) where P(λ) is a light emission spectrum of white light, B(λ) is a light emission spectrum of blackbody radiation of a color temperature correspond to a color temperature of the white light, and V(λ) is a spectrum of a spectral luminous efficiency.

Claims (21)

1. A white light source system comprising:

a substrate;

LED chips arranged on the substrate at intervals with each other; and

a phosphor layer directly or indirectly covering a periphery of the LED chips and containing a silicone resin and phosphors each having a peak wavelength of a light emission spectrum, wherein mutual absorption occurs in the phosphors, and wherein P(λ), B(λ) and V(λ) satisfy equation (1) below in a wavelength range in which λ, is 380 nm to 780 nm, and the white light source system satisfies expression (5) below in a wavelength range of 400 nm to 495 nm:

∫ 380 780 P (λ) V (λ) dλ=∫ 380 780 B (λ) V (λ) dλ   (1)

wherein P(λ)/B(λ)≤1.5 (5),

wherein P(λ) is a light emission spectrum of the white light emitted from the white light source system, B(λ) is a light emission spectrum of blackbody radiation of a color temperature correspond to a color temperature of the white light, and V(λ) is a spectrum of a spectral luminous efficiency, and

wherein a chromaticity variation of the white light source system after continuous lighting of 6000 hours is expressed as a variation of chromaticity on a CIE chromaticity diagram, and 0.01 or less.

2. The white light source system of claim 1 , wherein the white light source system is configured to be capable of reproducing white light of a color temperature of 2000 K to 6500 K on a locus of the blackbody radiation, and white light of any one of correlated color temperatures with a deviation from the color temperature of the white light being in a range of ±0.005 duv.

3. The white light source system of claim 2 , wherein an interval between each peak wavelength and a neighboring peak wavelength is 150 nm or less.

4. The white light source system of claim 2 , wherein the phosphors each exhibits a light emission spectrum having a half-value width of 50 nm or more.

5. The white light source system of claim 2 , wherein light emission spectra of the respective phosphors have different peak wavelengths, and include at least one wavelength region where a part of each light emission spectrum overlaps another light emission spectrum.

6. The white light source system of claim 2 , wherein the phosphors are a mixture of at least three kinds of phosphors selected from amongthe group consisting of a blue phosphor, a green phosphor, a yellow phosphor and a red phosphor.

7. The white light source system of claim 6 , wherein the mixture of phosphors comprises a blue-green phosphor.

8. The white light source system of claim 6 , wherein the blue phosphor is at least one kind selected from between a europium activated strontium aluminate phosphor having a light emission peak wavelength of 480 to 500 nm, and a europium activated alkaline earth phosphate phosphor having a light emission peak wavelength of 440 to 460 nm.

9. The white light source system of claim 6 , wherein the green phosphor is at least one kind selected from among a europium activated orthosilicate phosphor having a light emission peak wavelength of 520 to 550 nm, a europium activated β-sialon phosphor having a light emission peak wavelength of 535 to 545 nm, and a europium activated strontium sialon phosphor having a light emission peak wavelength of 520 to 540 nm.

10. The white light source system of claim 6 , wherein the yellow phosphor is at least one kind selected from between a europium activated orthosilicate phosphor having a light emission peak wavelength of 550 to 580 nm, and a cerium activated rare earth aluminum garnet phosphor having a light emission peak wavelength of 550 to 580 nm.

11. The white light source system of claim 6 , wherein the red phosphor is at least one kind selected from among a europium activated strontium sialon phosphor having a light emission peak wavelength of 600 to 630 nm, a europium activated calcium nitridoaluminosilicate phosphor having a light emission peak wavelength of 620 to 660 nm, and a manganese activated magnesium fluorogermanate phosphor having a light emission peak wavelength of 640 to 660 nm.

12. The white light source system of claim 1 , wherein an average color rendering index Ra of white light emitted from the white light source system is 95 or more, and all of color rendering indexes R 1 to R 8 and special color rendering indexes R 9 to R 15 are 85 or more.

13. The white light source system of claim 12 , wherein the average color rendering index Ra of the white light emitted from the white light source system is 97 or more, and all of the color rendering indexes R 1 to R 8 and the special color rendering indexes R 9 to R 15 are 90 or more.

14. The white light source system of claim 1 , wherein the phosphors are a mixture of at least three kinds of phosphors selected from the group consisting of a blue phosphor, a blue-green phosphor, a green phosphor, a yellow phosphor and a red phosphor, and wherein the green phosphor and/or the yellow phosphor is a europium activated orthosilicate phosphor.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 20, 2022
From: TOSHIBA MATERIALS CO., LTD.
To: SEOUL SEMICONDUCTOR CO., LTD.
Reel/Frame 058708/0599 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 5, 2021
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MATERIALS CO., LTD.
Reel/Frame 057089/0376 →
Priority Claims (2)
JP JP2015-126776 · Jun 24, 2015 · national
JP JP2016-082968 · Apr 18, 2016 · national
Continuity (5)
Continuation 16444243 · Jun 18, 2019
Continuation 16251468 · Jan 18, 2019
Continuation 15850399 · Dec 21, 2017
Continuation PCTJP2016068714 · Jun 23, 2016
Related Publication 20200253011A1 · Aug 6, 2020
Cited By (1)
US 12,482,794