Semiconductor layout with different row heights

1. A semiconductor device, comprising:

first cell rows extending in a first direction, each of the first cell rows having a first row height;

second cell rows extending in the first direction, each of the second cell rows having a second row height;

first power rails extending in the first direction, each of the first power rails being disposed at a boundary between two of the first cell rows; and

second power rails extending in the first direction, each of the second power rails being disposed at a boundary between one of the first cell rows and one of the second cell rows, wherein a first rail width of each of the first power rails is wider than a second rail width of each of the second power rails;

wherein the first row height is greater than the second row height, the first cell rows and the second cell rows are interlaced in a periodic sequence, a first row quantity of the first cell rows in the periodic sequence is greater than a second row quantity of the second cell rows in the periodic sequence,

each one of the first cell rows comprises first active regions, wherein each of the first active regions continuously extends across a corresponding first cell row of the first cell rows in the first direction, and

one of the first active regions comprises two n-type fin-shaped structures separated from each other.

2. The semiconductor device of claim 1 , wherein each one of the second cell rows comprises second active regions each of which continuously extends across a corresponding second cell row of the second cell rows in the first direction.

3. The semiconductor device of claim 2 , wherein the first active regions in each one of the first cell rows further comprise two p-type fin-shaped structures, the second active regions in each one of the second cell rows comprise one n-type fin-shaped structure and one p-type fin-shaped structure.

4. The semiconductor device of claim 2 , wherein a quantity of fin-shaped structures of the first active regions in each one of the first cell rows is greater than a quantity of fin-shaped structures of the second active regions in each one of the second cell rows.

5. The semiconductor device of claim 1 , further comprising:

a first integrated circuit cell disposed on one of the first cell rows;

a second integrated circuit cell disposed on one of the second cell rows; and

a third integrated circuit cell disposed on one of the first cell rows and adjacent one of the second cell rows.

6. The semiconductor device of claim 5 , further comprising:

a fourth integrated circuit cell disposed on two of the first cell rows and one of the second cell rows.

7. The semiconductor device of claim 1 , wherein an amount of the first power rails is less than an amount of the second power rails.

8. A semiconductor device, comprising:

first cell rows extending in a first direction, each of the first cell rows having a first row height;

second cell rows extending in the first direction, each of the second cell rows having a second row height, wherein the first row height is greater than the second row height;

first power rails extending in the first direction, each of the first power rails being disposed at a boundary between two of the first cell rows; and

second power rails extending in the first direction, each of the second power rails being disposed at a boundary between one of the first cell rows and one of the second cell rows,

wherein a first rail width of each of the first power rails is wider than a second rail width of each of the second power rails,

the first cell rows comprises a first cell row, a second cell row and a third cell row,

the second cell rows comprises a fourth cell row and a fifth cell row, and

the first cell row, the second cell row, the fourth cell row, the third cell row and the fifth cell row are arranged continuously in order.

9. The semiconductor device of claim 8 , wherein each one of the first cell rows comprises first active regions each of which continuously extends across a corresponding first cell row of the first cell rows in the first direction, and each one of the second cell rows comprises second active regions each of which continuously extends across a corresponding second cell row of the second cell rows in the first direction.

10. The semiconductor device of claim 9 , wherein the first active regions in each one of the first cell rows comprise two n-type fin-shaped structures and two p-type fin-shaped structures, the second active regions in each one of the second cell rows comprise one n-type fin-shaped structure and one p-type fin-shaped structure.

11. The semiconductor device of claim 9 , wherein a quantity of fin-shaped structures of the first active regions in each one of the first cell rows is greater than a quantity of fin-shaped structures of the second active regions in each one of the second cell rows.

12. The semiconductor device of claim 8 , wherein the first cell rows and the second cell rows are arranged in an interlaced configuration along a second direction perpendicular to the first direction.

13. The semiconductor device of claim 8 , wherein a ratio between a first row quantity of the first cell rows and a second row quantity of the second cell rows in a periodic sequence is M:N, M and N are positive integers and M>N.

14. The semiconductor device of claim 8 , wherein an amount of the first power rails is less than an amount of the second power rails.

15. A semiconductor device, comprising:

first cell rows extending in a first direction, each of the first cell rows comprising a first quantity of fin-shaped structures extending in the first direction;

second cell rows extending in the first direction, each of the second cell rows comprising a second quantity of fin-shaped structures extending in the first direction;

first power rails extending in the first direction, each of the first power rails being disposed at a boundary between two of the first cell rows;

second power rails extending in the first direction, each of the second power rails being disposed at a boundary between one of the first cell rows and one of the second cell rows, wherein a first rail width of each of the first power rails is wider than a second rail width of each of the second power rails;

a first integrated circuit cell disposed on each of a first cell row of the first cell rows and a second cell row of the second cell rows;

a second integrated circuit cell disposed on each of a third cell row of the first cell rows and a fourth cell row of the second cell rows; and

a third integrated circuit cell disposed on a fifth cell row of the first cell rows and abutted with each of the first integrated circuit cell and the second integrated circuit cell,

wherein the fifth cell row is disposed between the second cell row and the third cell row,

wherein the first quantity is greater than the second quantity, the first cell rows and the second cell rows are interlaced in a periodic sequence, a first row quantity of the first cell rows in the periodic sequence is greater than a second row quantity of the second cell rows in the periodic sequence.

16. The semiconductor device of claim 15 , wherein each of the first cell rows comprises four fin-shaped structures, each of the second cell rows comprise two fin-shaped structures.

17. The semiconductor device of claim 16 , wherein each of the first cell rows comprises two n-type fin-shaped structures and two p-type fin-shaped structures, each of the second cell rows comprises one n-type fin-shaped structure and one p-type fin-shaped structure.

18. The semiconductor device of claim 15 , wherein the first cell rows and the second cell rows are arranged in an interlaced configuration along a second direction perpendicular to the first direction.

19. The semiconductor device of claim 15 , wherein a ratio between the first row quantity and the second row quantity in a periodic sequence is M:N, M and N are positive integers and M>N.

20. The semiconductor device of claim 15 , wherein an amount of the first power rails is less than an amount of the second power rails.