Semiconductor module and power conversion apparatus

1. A semiconductor module comprising:

an insulating heat dissipation sheet;

a first semiconductor device provided on the heat dissipation sheet;

a second semiconductor device provided on the heat dissipation sheet and directly connected to the first semiconductor device;

a third semiconductor device directly connected to the second semiconductor device;

a lead frame including a lead terminal and a die pad which are formed integrally;

a wire connecting the lead frame to the first semiconductor device and constituting a main current path; and

a mold resin sealing the heat dissipation sheet, the first semiconductor device, the lead frame and the wire,

wherein the lead terminal is led out from the mold resin,

the heat dissipation sheet is in direct contact with an undersurface of the die pad,

the wire is bonded to the die pad directly above a contact part provided between the die pad and the heat dissipation sheet, and

the lead frame has a height difference between a portion of the lead terminal sealed by the mold resin and the die pad.

2. The semiconductor module according to claim 1 , wherein the second semiconductor device is a low voltage side semiconductor device and the first semiconductor device is a high voltage side semiconductor device connected to a high voltage side of the low voltage side semiconductor device.

3. The semiconductor module according to claim 1 , wherein the lead frame includes a joining part provided between the lead terminal and the die pad and having a smaller cross-sectional area than those of the lead terminal and the die pad.

4. The semiconductor module according to claim 1 , wherein

the second semiconductor device is a low voltage side semiconductor device connected to a low voltage side of the first semiconductor device,

the semiconductor module further comprises a low side lead frame connected via a wire to the low voltage side semiconductor device, and

an undersurface of the low side lead frame is not covered with the heat dissipation sheet and is exposed from the mold resin.

5. The semiconductor module according to claim 4 , further comprising an insulating member applied to the undersurface of the low side lead frame.

6. The semiconductor module according to claim 1 , wherein the second semiconductor device includes three-phase semiconductor devices, and

one lead frame is connected to the three-phase semiconductor devices via wires respectively.

7. The semiconductor module according to claim 1 , wherein a distal end part of the lead terminal led out from the mold resin is thicker than a root of the lead terminal.

8. The semiconductor module according to claim 1 , further comprising a metallic attachment joined to a distal end part of the lead terminal led out from the mold resin.

9. The semiconductor module according to claim 1 , wherein the first semiconductor device is made of a wide-band-gap semiconductor.

10. A power conversion apparatus comprising:

the semiconductor module according to claim 1 converting input power and outputting converted power;

a control circuit outputting a control signal for controlling the semiconductor module to the semiconductor module; and

a heat sink dissipating heat of the semiconductor module.

11. The semiconductor module according to claim 1 , further comprising:

a first die pad on the heat dissipation sheet, wherein

the die pad is a second die pad,

the first semiconductor device is provided on the first die pad,

the lead terminal and the second die pad are separated from the first die pad, and

the mold resin seals the first die pad.