Hybrid perovskite material processing
A method for preparing photoactive perovskite materials. The method comprises the steps of: introducing a lead halide and a first solvent to a first vessel and contacting the lead halide with the first solvent to dissolve the lead halide to form a lead halide solution, introducing a Group 1 metal halide a second solvent into a second vessel and contacting the Group 1 metal halide with the second solvent to dissolve the Group 1 metal halide to form a Group 1 metal halide solution, and contacting the lead halide solution with the Group 1 metal halide solution to form a thin-film precursor ink. The method further comprises depositing the thin-film precursor ink onto a substrate, drying the thin-film precursor ink to form a thin film, annealing the thin film; and rinsing the thin film with a salt solution.
1. A method comprising the steps of:
preparing a thin-film precursor ink, wherein preparing the thin-film precursor ink comprises the steps of:
contacting a lead halide with a first solvent to dissolve the lead halide to form a lead halide solution;
contacting a Group 1 metal halide with a second solvent to dissolve the group 1 metal halide to form a Group 1 metal halide solution;
contacting the lead halide solution with the Group 1 metal halide solution to form the thin-film precursor ink;
depositing the thin-film precursor ink onto a substrate; drying the thin-film precursor ink to form a thin film; annealing the thin film; and
rinsing the thin film with a salt solution comprising a third solvent and a salt selected from the group consisting of methylammonium halide, formamidinium halide, guanidinium halide, ethene tetramine halide, imidazolium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide,
wherein the thin-film precursor ink has a molar concentration of the Group 1 metal halide that is between 1% and 25% of the molar concentration of the lead halide.
2. The method of claim 1 , wherein the lead halide comprises lead (II) iodide.
3. The method of claim 1 , wherein the Group 1 metal halide comprises cesium iodide.
4. The method of claim 1 , wherein the Group 1 metal halide comprises rubidium iodide.
5. The method of claim 1 , wherein the Group 1 metal halide comprises sodium iodide.
6. The method of claim 1 , wherein the Group 1 metal halide comprises potassium iodide.
7. The method of claim 1 , wherein the first solvent and the second solvent are selected from the group consisting of dry N-cyclohexyl-2-pyrrolidone, alkyl-2-pyrrolidone, dimethylformamide (DMF), dialkylformamide, dimethylsulfoxide (DMSO), methanol, ethanol, propanol, butanol, tetrahydrofuran, formamide, tert-butylpyridine, pyridine, alkylpyridine, pyrrolidine, chlorobenzene, dichlorobenzene, dichloromethane, chloroform, and combinations thereof.
8. The method of claim 1 , wherein the first solvent comprises dry dimethylformamide (DMF).
9. The method of claim 1 , wherein the second solvent comprises dimethylsulfoxide (DMSO).
10. The method of claim 1 , wherein the third solvent is selected from the group consisting of dimethylformamide, isopropanol, methanol, ethanol, butanol, chloroform, chlorobenzene, dimethylsulfoxide, water, and combinations thereof.
11. The method of claim 1 , wherein annealing the thin film occurs for between about 5 to about 30 minutes at a temperature between about 40 C to about 60 C.
12. The method of claim 1 , wherein the salt comprises formamidinium iodide.
13. The method of claim 1 , wherein the salt comprises methylammonium iodide.
14. The method of claim 1 , wherein rinsing the thin film comprises at least partial submersion in the salt solution.
15. A method comprising the steps of:
preparing a thin-film precursor ink, wherein preparing the thin-film precursor ink comprises the steps of:
contacting a lead halide and a Group 1 metal halide with a first solvent to form a thin-film precursor solution;
depositing the thin-film precursor ink onto a substrate; drying the thin-film precursor ink to form a thin film; annealing the thin film; and
rinsing the thin film with a salt solution comprising a second solvent and a salt selected from the group consisting of methylammonium halide, formamidinium halide, guanidinium halide, ethene tetramine halide, imidazolium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide,
wherein the thin-film precursor ink has a molar concentration of the Group 1 metal halide that is between 1% and 25% of the molar concentration of the lead halide.
16. The method of claim 15 , further comprising contacting a third solvent with the first solvent or the thin-film precursor solution.
17. The method of claim 15 , wherein the lead halide comprises lead (II) iodide and the Group 1 metal halide comprises cesium iodide.
18. The method of claim 15 , wherein the lead halide comprises lead (II) iodide and the Group 1 metal halide comprises rubidium iodide.