Semiconductor device and fabrication method thereof
The present disclosure provides a semiconductor device and a fabrication method. The method includes: providing a substrate; forming at least one sacrificial layer and at least one liner layer, that are alternately stacked over each other, on the substrate; etching the at least one liner layer and the at least one sacrificial layer until the substrate is exposed, to form a plurality of fins, discretely arranged on the substrate; and etching a portion of a thickness of the substrate, such that a width of the etched portion of the substrate at a bottom of the at least one sacrificial layer is less than a width of the at least one liner layer of the plurality of fins.
1. A fabrication method of a semiconductor device, comprising:
providing a substrate;
forming at least one sacrificial layer and at least one liner layer, the at least one sacrificial layer and the at least one liner layer being alternately stacked over each other, on the substrate;
etching the at least one sacrificial layer and the at least one liner layer until the substrate is exposed, to form a plurality of fins, discretely arranged on the substrate; and
after forming the plurality of fins, etching a portion of a thickness of the substrate, such that in a direction perpendicular to an extension direction of the plurality of fins, a width of a remaining portion of the thickness of the substrate below the at least one sacrificial layer is less than a width of the at least one liner layer of the plurality of fins.
2. A fabrication method of a semiconductor device, comprising:
providing a substrate;
forming at least one sacrificial layer and at least one liner layer, that are alternately stacked over each other, on the substrate;
etching the at least one sacrificial layer and the at least one liner layer until the substrate is exposed, to form a plurality of fins, discretely arranged on the substrate;
after forming the plurality of fins, etching a portion of a thickness of the substrate, such that a width of the etched portion of the substrate at a bottom of the at least one sacrificial layer is less than a width of the at least one liner layer of the plurality of fins, and
etching both sides of each liner layer of the at least one liner layer of the plurality of fins, such that, the at least one liner layer includes a plurality of liner layers, widths of the plurality of liner layers increase layer-by-layer in a direction away from the substrate.
3. The method according to claim 2 , before forming the plurality of fins on the substrate, further including:
ion-doping the at least one liner layer such that an etch rate of the at least one liner layer is less than an etch rate of the substrate.
4. The method according to claim 3 , wherein:
the at least one liner layer is made of one or more of silicon, germanium, silicon germanium, and gallium arsenide.
5. The method according to claim 3 , wherein:
ions used for ion-doping the at least one liner layer include one of boron ions, phosphorus ions, and arsenic ions.
6. The method according to claim 1 , wherein:
the at least one sacrificial layer is made of one or more of silicon, germanium, silicon germanium, and gallium.
7. The method according to claim 1 , after etching the portion of the thickness of the substrate, further including:
removing a portion of the at least one sacrificial layer from the plurality of fins; and
forming at least one conduit in the plurality of fins to replace the removed portion of the at least one sacrificial laver.
8. The method according to claim 7 , before removing a portion of the at least one sacrificial layer and forming the at least one conduit in the plurality of fins, further including:
forming an isolation structure on the substrate, wherein the isolation structure covers the etched portion of the substrate.
9. The method according to claim 8 , further including:
forming an isolation wall covering the etched portion of the at least one liner layer of the plurality of fins.
10. The method according to claim 2 , further including:
using a wet etching process to etch the portion of the thickness of the substrate and the both sides of each liner layer of the at least one liner layer of the plurality of fins.
11. The method according to claim 2 , wherein:
the at least one sacrificial layer is made of one or more of silicon, germanium, silicon germanium, and gallium.
12. The method according to claim 2 , after etching the portion of the thickness of the substrate, further including:
removing a portion of the at least one sacrificial layer from the plurality of fins; and
forming at least one conduit in the plurality of fins to replace the removed portion of the at least one sacrificial layer.
13. The method according to claim 12 , before removing a portion of the at least one sacrificial layer and forming the at least one conduit in the plurality of fins, further including:
forming an isolation structure on the substrate, wherein the isolation structure covers the etched portion of the substrate.
14. The method according to claim 13 , further including:
forming an isolation wall covering the etched portion of the at least one liner layer of the plurality of fins.