Semiconductor device
A semiconductor device may include: an upper conductive plate, a middle conductive plate, and a lower conductive plate that are stacked on each other; a first semiconductor chip located between the upper conductive plate and the middle conductive plate and electrically connected to both the upper conductive plate and the middle conductive plate; and a second semiconductor chip located between the middle conductive plate and the lower conductive plate and electrically connected to both the middle conductive plate and the lower conductive plate, wherein one of an area of the upper conductive plate and an are of the lower conductive plate may be smaller than an area of the middle conductive plate, and another of the area of the upper conductive plate and the area of the lower conductive plate may be larger than the area of the middle conductive plate.
1. A semiconductor device comprising:
an upper conductive plate, a middle conductive plate, and a lower conductive plate that are stacked on each other;
a first semiconductor chip located between the upper conductive plate and the middle conductive plate and electrically connected to both the upper conductive plate and the middle conductive plate; and
a second semiconductor chip located between the middle conductive plate and the lower conductive plate and electrically connected to both the middle conductive plate and the lower conductive plate,
wherein, in a plan view along a stacking direction,
one of an area of the upper conductive plate and an area of the lower conductive plate is smaller than an area of the middle conductive plate and is larger than an area of the first semiconductor chip and an area of the second semiconductor chip, and
another of the area of the upper conductive plate and the area of the lower conductive plate is larger than the area of the middle conductive plate.
2. The semiconductor device according to claim 1 , wherein
each of the first semiconductor chip and the second semiconductor chip comprises a first main electrode and a second main electrode which has a larger area than the first main electrode,
the first semiconductor chip is connected to the upper conductive plate by the first main electrode and is connected to the middle conductive plate by the second main electrode, and
the second semiconductor chip is connected to the middle conductive plate by the first main electrode and is connected to the lower conductive plate by the second main electrode.
3. The semiconductor device according to claim 2 , wherein
the area of the upper conductive plate is smaller than the area of the middle conductive plate, and
the area of the lower conductive plate is larger than the area of the middle conductive plate.
4. The semiconductor device according to claim 2 , wherein
the area of the upper conductive plate is larger than the area of the middle conductive plate, and
the area of the lower conductive plate is smaller than the area of the middle conductive plate.
5. The semiconductor device according to claim 1 , wherein
a thickness of one of the upper conductive plate and the lower conductive plate is larger than a thickness of another of the upper conductive plate and the lower conductive plate.
6. The semiconductor device according to claim 1 , further comprising an encapsulant encapsulating the first semiconductor chip and the second semiconductor chip and integrally holding the upper conductive plate, the middle conductive plate, and the lower conductive plate.