Buried contact layer for UV emitting device
In some embodiments, a light emitting structure comprises a layered semiconductor stack comprising a first set of doped layers, a second layer, a light emitting layer positioned between the first set of doped layers and the second layer, and an electrical contact to the first set of doped layers. The first set of doped layers can comprise a first sub-layer, a second sub-layer, and a third sub-layer, where the third sub-layer is adjacent to the light emitting layer. The electrical contact to the first set of doped layers can be made to the second sub-layer. The first, second and third sub-layers can be doped n-type, and an electrical conductivity of the second sub-layer can be higher than an electrical conductivity of the first and third sub-layers. In some cases, the second sub-layer can absorb more light emitted from the light emitting layer than the first or third sub-layers.
1. A light emitting structure, comprising:
a layered stack comprising a first set of doped layers, a second layer, a light emitting layer positioned between the first set of doped layers and the second layer, and an electrical contact to the first set of doped layers, wherein:
the first set of doped layers, the second layer, and the light emitting layer comprise semiconductor materials;
the first set of doped layers comprises a first sub-layer, a second sub-layer, and a third sub-layer, the third sub-layer being adjacent to the light emitting layer;
the first, second and third sub-layers comprise a first, second and third superlattice, respectively;
well layers of the second superlattice are thicker than well layers of the first and third superlattices;
barrier layers of the second superlattice are thinner than barrier layers of the first and third superlattices;
the electrical contact to the first set of doped layers is made to the second sublayer;
the first, second and third sub-layers are doped n-type;
an electrical conductivity of the second sub-layer is higher than an electrical conductivity of the first and third sub-layers;
the light emitting layer comprises a fourth superlattice;
the second layer comprises a fifth superlattice; and
the fifth superlattice is a chirped superlattice comprising changing well layer thicknesses, changing barrier layer thicknesses, or changing well layer and barrier layer thicknesses through the fifth superlattice.
2. The light emitting structure of claim 1 , wherein:
light with a wavelength shorter than 300 nm that is emitted from the light emitting layer passes through the first set of doped layers before being emitted from the light emitting structure; and
the second sub-layer absorbs from 10% to 60% of the light emitted from the light emitting layer that reaches the second sub-layer.
3. The light emitting structure of claim 1 , wherein the well layers of the second superlattice comprise materials with lower bandgaps than the well layers of the first and third superlattices.
4. The light emitting structure of claim 1 , wherein the first, second, third, fourth, and fifth superlattices each comprise sets of GaN well layers and AlN barrier layers.
5. The light emitting structure of claim 1 , wherein the chirped superlattice is a p-type chirped superlattice comprising changing well layer thicknesses, changing barrier layer thicknesses, or changing well layer and barrier layer thicknesses through the fifth superlattice.
6. A light emitting structure, comprising:
a layered stack comprising a first set of doped layers, a second layer, a light emitting layer positioned between the first set of doped layers and the second layer, and an electrical contact to the first set of doped layers, wherein:
the first set of doped layers, the second layer, and the light emitting layer comprise semiconductor materials;
the first set of doped layers comprises a first sub-layer, a second sub-layer, and a third sub-layer, the third sub-layer being adjacent to the light emitting layer;
the electrical contact to the first set of doped layers is made to the second sublayer;
the first, second and third sub-layers are doped n-type;
an electrical conductivity of the second sub-layer is higher than an electrical conductivity of the first and third sub-layers;
the first, second and third sub-layers comprise a first, second and third superlattice, respectively;
the light emitting layer comprises a fourth superlattice;
the second layer comprises a fifth superlattice;
the first, second, third, fourth, and fifth superlattices each comprise sets of GaN well layers and AlN barrier layers; and
the fifth superlattice is a chirped superlattice comprising changing well layer thicknesses, changing barrier layer thicknesses, or changing well layer and barrier layer thicknesses through the fifth superlattice.
7. The light emitting structure of claim 6 , wherein:
light with a wavelength shorter than 300 nm is emitted from the light emitting layer and passes through the first set of doped layers before being emitted from the light emitting structure; and
the second sub-layer absorbs from 10% to 60% of the light emitted from the light emitting layer that reaches the second sub-layer.
8. The light emitting structure of claim 6 , wherein well layers of the second superlattice are thicker than well layers of the first and third superlattices.
9. The light emitting structure of claim 6 , wherein the chirped superlattice is a p-type chirped superlattice comprising changing well layer thicknesses, changing barrier layer thicknesses, or changing well layer and barrier layer thicknesses through the fifth superlattice.