Stacked type semiconductor memory device
According to one embodiment, a semiconductor memory device includes a stacked body which is provided on a substrate and in which an insulating film and an electrode film are alternately stacked. The semiconductor memory device also includes an insulating member which penetrates the stacked body in a stacking direction of the insulating film and the electrode film to thereby separate the stacked body. The semiconductor memory device also includes a semiconductor pillar which penetrates the stacked body in the stacking direction. A maximum portion of the insulating member where a first distance from a side surface of the insulating member to a central plane of the insulating member becomes maximum and a maximum portion of the semiconductor pillar where a second distance from a side surface of the semiconductor pillar to a center line of the semiconductor pillar becomes maximum being provided in different positions in the stacking direction.
1. A semiconductor memory device comprising:
a substrate;
a stacked body provided above the substrate and in which an insulating film and an electrode film are alternately stacked in a first direction;
an insulating member which extends through the stacked body in the first direction and a second direction crossing the first direction and separates the stacked body in a third direction crossing the first and second directions; and
a pillar including a semiconductor which extends through the stacked body in the first direction,
the insulating member including a first part and a second part provided on the first part,
each of the first part and the second part including a maximum portion where a first distance from a side surface of the insulating member to a central plane of the insulating member becomes maximum, and
the maximum portion of the first part and the maximum portion of the second part being placed away from ends of the insulating member in the first direction.
2. The device according to claim 1 ,
wherein, the pillar includes a maximum portion where a second distance from a side surface of the pillar to a center line of the pillar becomes maximum, and
in the first direction, a position of the maximum portion of the pillar is higher than a position of the maximum portion of the first part.
3. The device according to claim 2 ,
wherein, the insulating member, except for end parts of the insulating member, includes one or more minimum points of the insulating member where the first distance becomes minimum.
4. The device according to claim 1 ,
wherein the insulating member further includes a third part provided on the second part, and
the third part has a maximum portion where the first distance becomes maximum.
5. A semiconductor memory device comprising:
a substrate;
a stacked body provided above the substrate and in which an insulating film and an electrode film are alternately stacked in a first direction;
an insulating member which extends through the stacked body in the first direction and a second direction crossing the first direction and separates the stacked body in a third direction crossing the first and second directions; and
a pillar including a semiconductor which extends through the stacked body in the first direction,
the insulating member including a first part and a second part provided on the first part,
each of the first part and the second part including a maximum portion where a first distance from a side surface of the insulating member to a central plane of the insulating member becomes maximum, and
the first distance of the maximum portion of the first part being greater than the first distance of the maximum portion of the second part.