Composite transistor having overlapping active regions and control electrode
Disclosed herein is a composite transistor which includes a first transistor TR 1 including a control electrode, a first active region, a first A extending part, and a first B extending part, and a second transistor TR 2 including a control electrode, a second active region, a second A extending part, and a second B extending part. The first active region, the second active region, and the control electrode overlap one another. Both the first A extending part and the first B extending part extend from the first active region and both the second A extending part and the second B extending part extend from the second active region. The first electrode is connected to the first A extending part, the second electrode is connected to the second A extending part, and the third electrode is connected to the first B extending part and the second B extending part.
1. A composite transistor, comprising:
a first transistor including a control electrode, a first active region, a first A extending part, and a first B extending part; and
a second transistor including the control electrode, a second active region, a second A extending part, and a second B extending part, wherein the first active region, the second active region, and the control electrode overlap with one another in an overlapping region,
each of the two transistors has a first electrode, a second electrode, and a third electrode,
an insulation layer is provided between the control electrode and one of the first active region and the second active region both adjacent to the control electrode,
each of the two transistors has the first A extending part that extends from one end of the first active region, the first B extending part that extends from another end of the first active region, the second A extending part that extends from one end of the second active region, and the second B extending part that extends from another end of the second active region,
the first electrode connects to the first A extending part,
the second electrode connects to the second A extending part,
the third electrode connects to the first B extending part and the second B extending part,
the first active region in the overlapping region includes a first A active region and a first B active region overlapping with the first A active region,
the first A extending part extends from the first A active region,
the first B extending part extends from the first B active region,
the second active region in the overlapping region includes a second A active region and a second B active region overlapping with the second A active region,
the second A extending part extends from the second A active region, and
the second B extending part extends from the second B active region.
2. The composite transistor according to claim 1 , wherein the first transistor becomes conductive and the second transistor becomes non-conductive when the first electrode is given a voltage higher than a voltage given to the second electrode and the control electrode is given a first voltage, and the second transistor becomes conductive and the first transistor becomes non-conductive when the control electrode is given a second voltage higher than the first voltage.
3. The composite transistor according to claim 1 , wherein the first active region and the second active region include a two-dimensional material or graphene.
4. The composite transistor of claim 1 , wherein a second insulation layer is provided between the first active region and the second active region.
5. The composite transistor according to claim 4 , wherein the first active region and the second active region include a two-dimensional material or graphene.
6. The composite transistor according to claim 5 ,
wherein a first interlayer insulation layer is provided between the first A active region and the first B active region, and
a second interlayer insulation layer is provided between the second A active region and the second B active region.
7. The composite transistor according to claim 4 ,
wherein a first interlayer insulation layer is provided between the first A active region and the first B active region, and
a second interlayer insulation layer is provided between the second A active region and the second B active region.
8. A composite transistor, comprising:
a first transistor including a control electrode, a first active region, a first A extending part, and a first B extending part; and
a second transistor including the control electrode, a second active region, a second A extending part, and a second B extending part, wherein the first active region, the second active region, and the control electrode overlap with one another in an overlapping region,
each of the two transistors has a first electrode, a second electrode, and a third electrode,
an insulation layer is provided between the control electrode and one of the first active region and the second active region both adjacent to the control electrode,
each of the two transistors has the first A extending part that extends from one end of the first active region, the first B extending part that extends from another end of the first active region, the second A extending part that extends from one end of the second active region, and the second B extending part that extends from another end of the second active region,
the first electrode connects to the first A extending part,
the second electrode connects to the second A extending part,
the third electrode connects to the first B extending part and the second B extending part,
the first active region in the overlapping region includes a first A active region and a first B active region which is positioned on the same virtual plane as the first A active region and which faces the first A active region,
the first A extending part extends from the first A active region,
the first B extending part extends from the first B active region,
the second active region in the overlapping region includes a second A active region and a second B active region which is positioned on the same virtual plane as the second A active region and which faces the second A active region,
the second A extending part extends from the second A active region, and
the second B extending part extends from the second B active region.
9. The composite transistor according to claim 8 , wherein the first transistor becomes conductive and the second transistor becomes non-conductive when the first electrode is given a voltage higher than a voltage given to the second electrode and the control electrode is given a first voltage, and the second transistor becomes conductive and the first transistor becomes non-conductive when the control electrode is given a second voltage higher than the first voltage.
10. The composite transistor of claim 8 , wherein the first active region and the second active region include a two-dimensional material or graphene.
11. The composite transistor according to claim 8 , wherein a second insulation layer is provided between the first active region and the second active region.
12. The composite transistor of claim 11 , wherein the first active region and the second active region include a two-dimensional material or graphene.
13. The composite transistor according to claim 12 ,
wherein a first interlayer insulation layer is provided between the first A active region and the first B active region, and
a second interlayer insulation layer is provided between the second A active region and the second B active region.
14. The composite transistor according to claim 11 ,
wherein a first interlayer insulation layer is provided between the first A active region and the first B active region, and
a second interlayer insulation layer is provided between the second A active region and the second B active region.