Light-emitting device, manufacturing method thereof and display module using the same
A light-emitting device includes a light-emitting element having a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface. A first electrode is disposed on the bottom surface and electrically connected to the first-type semiconductor layer. A second electrode is disposed on the bottom surface and electrically connected to the second-type semiconductor layer. A supporting structure is disposed on the top surface. The supporting structure has a thickness and a maximum width. A ratio of the maximum width to the thickness is of 2˜150.
1. A light-emitting device, comprising:
a light-emitting element comprising a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface;
a first electrode disposed on the bottom surface and electrically connected to the first-type semiconductor layer;
a second electrode disposed on the bottom surface and electrically connected to the second-type semiconductor layer; and
a supporting structure disposed on the top surface,
wherein the supporting structure has a thickness and the light-emitting element has a maximum width, a ratio of the maximum width to the thickness is of 2˜150.
2. The light-emitting device according to claim 1 , wherein, in a top view, the supporting structure has a total area smaller than that of the light-emitting element.
3. The light-emitting device according to claim 2 , wherein the total area of the supporting structure is 1/20 to ⅓ of that of the light-emitting element.
4. The light-emitting device according to claim 1 , wherein, in a top view, the supporting structure is formed in a shape of an elongated rectangle.
5. The light-emitting device according to claim 1 , wherein, in a top view, the supporting structure has a longer edge parallel with that of the light-emitting element.
6. The light-emitting device according to claim 1 , wherein, in a top view, the supporting structure is formed in a shape of a rectangular loop.
7. The light-emitting device according to claim 6 , wherein the supporting structure extends along a periphery of the light-emitting element.
8. The light-emitting device according to claim 1 , wherein, in a top view, the supporting structure is formed in a shape having a plurality of rectangles.
9. The light-emitting device according to claim 1 , wherein, in a top view, the supporting structure is formed in an I-shape.
10. The light-emitting device according to claim 1 , wherein the supporting structure comprises metal.
11. The light-emitting device according to claim 1 , wherein the supporting structure comprises Ni.
12. The light-emitting device according to claim 1 , wherein the thickness of the supporting structure is smaller than that of the light-emitting element.
13. The light-emitting device according to claim 1 , wherein the thickness is of 1 μm˜5 μm.
14. The light-emitting device according to claim 1 , wherein the light-emitting element has a width of 20 μm˜150 μm.
15. The light-emitting device according to claim 1 , wherein the light-emitting element comprises a growth substrate.
16. The light-emitting device according to claim 1 , wherein the light-emitting element is devoid of a growth substrate.
17. The light-emitting device according to claim 1 , wherein the supporting structure contacts the top surface.
18. The light-emitting device according to claim 1 , further comprising another supporting structure disposed on the bottom surface.
19. The light-emitting device according to claim 18 , wherein the another supporting structure exposes the first electrode and the second electrode.