Solid state imaging device, manufacturing method of the same, and electronic equipment
A solid state imaging device that includes a phase difference detection pixel which is a pixel for phase difference detection; a first imaging pixel which is a pixel for imaging and is adjacent to the phase difference detection pixel; and a second imaging pixel which is a pixel for imaging other than the first imaging pixel. An area of a color filter of the first imaging pixel is smaller than an area of a color filter of the second imaging pixel.
1. An imaging device, comprising:
a first photoelectric conversion region;
a second photoelectric conversion region disposed adjacent to the first photoelectric conversion region;
a third photoelectric conversion region disposed adjacent to the first photoelectric conversion region;
a first on-chip lens disposed above the first photoelectric conversion region;
a second on-chip lens disposed above the second photoelectric conversion region;
a third on-chip lens disposed above the third photoelectric conversion region;
a first color filter disposed between the first on-chip lens and the first photoelectric conversion region;
a second color filter disposed between the second on-chip lens and the second photoelectric conversion region;
a third color filter disposed between the third on-chip lens and the third photoelectric conversion region;
a first light shield disposed between the first on-chip lens and the first photoelectric conversion region, the first light shield overlapping with the first photoelectric conversion region in a plan view;
a second light shield disposed between the second on-chip lens and the second photoelectric conversion region, the second light shield overlapping with the second photoelectric conversion region in the plan view; and
a third light shield disposed between the third on-chip lens and the third photoelectric conversion region, the third light shield overlapping with the third photoelectric conversion region in the plan view,
wherein an area of the second light shield is less than an area of the first light shield and greater than an area of the third light shield.
2. The imaging device of claim 1 , wherein the first photoelectric conversion region is configured to receive light passing through the first color filter and wherein the second photoelectric conversion region is configured to receive light passing through the second color filter.
3. The imaging device of claim 1 , wherein the first color filter is clear.
4. The imaging device of claim 1 , wherein the first color filter and the second color filter are a same color.
5. The imaging device of claim 1 , further comprising a phase difference detection pixel and a plurality of imaging pixels.
6. The imaging device of claim 1 , wherein an area of the first color filter is smaller than an area of the second color filter.
7. A method of forming an imaging device, the method comprising:
disposing a first photoelectric conversion region;
disposing a second photoelectric conversion region adjacent to the first photoelectric conversion region;
disposing a third photoelectric conversion region adjacent to the first photoelectric conversion region;
disposing a first on-chip lens above the first photoelectric conversion region;
disposing a second on-chip lens above the second photoelectric conversion region;
disposing a third on-chip lens above the third photoelectric conversion region;
disposing a first color filter between the first on-chip lens and the first photoelectric conversion region;
disposing a second color filter between the second on-chip lens and the second photoelectric conversion region;
disposing a third color filter between the third on-chip lens and the third photoelectric conversion region
disposing a first light shield between the first on-chip lens and the first photoelectric conversion region, the first light shield overlapping with the first photoelectric conversion region in a plan view;
disposing a second light shield between the second on-chip lens and the second photoelectric conversion region, the second light shield overlapping with the second photoelectric conversion region in the plan view; and
disposing a third light shield between the third on-chip lens and the third photoelectric conversion region, the third light shield overlapping with the third photoelectric conversion region in the plan view,
wherein an area of the second light shield is less than an area of the first light shield and greater than an area of the third light shield.
8. The method of claim 7 , wherein the first photoelectric conversion region is configured to receive light passing through the first color filter and wherein the second photoelectric conversion region is configured to receive light passing through the second color filter.
9. The method of claim 7 , wherein the first color filter is clear.
10. The method of claim 7 , wherein the first color filter and the second color filter are a same color.
11. The method of claim 7 , further comprising forming a phase difference detection pixel and a plurality of imaging pixels.
12. The method of claim 7 , wherein an area of the first color filter is smaller than an area of the second color filter.
13. An electronic apparatus comprising a solid state imaging device, the solid state imaging device comprising:
a first photoelectric conversion region;
a second photoelectric conversion region disposed adjacent to the first photoelectric conversion region;
a third photoelectric conversion region disposed adjacent to the first photoelectric conversion region;
a first on-chip lens disposed above the first photoelectric conversion region;
a second on-chip lens disposed above the second photoelectric conversion region;
a third on-chip lens disposed above the third photoelectric conversion region;
a first color filter disposed between the first on-chip lens and the first photoelectric conversion region;
a second color filter disposed between the second on-chip lens and the second photoelectric conversion region;
a third color filter disposed between the third on-chip lens and the third photoelectric conversion region;
a first light shield disposed between the first on-chip lens and the first photoelectric conversion region, the first light shield overlapping with the first photoelectric conversion region in a plan view;
a second light shield disposed between the second on-chip lens and the second photoelectric conversion region, the second light shield overlapping with the second photoelectric conversion region in the plan view; and
a third light shield disposed between the third on-chip lens and the third photoelectric conversion region, the third light shield overlapping with the third photoelectric conversion region in the plan view,
wherein an area of the second light shield is less than an area of the first light shield and greater than an area of the third light shield.
14. The electronic apparatus of claim 13 , wherein the first photoelectric conversion region is configured to receive light passing through the first color filter and wherein the second photoelectric conversion region is configured to receive light passing through the second color filter.
15. The electronic apparatus of claim 13 , wherein the first color filter is clear.
16. The electronic apparatus of claim 13 , wherein the first color filter and the second color filter are a same color.
17. The electronic apparatus of claim 13 , wherein the imaging device further comprises a phase difference detection pixel and a plurality of imaging pixels.
18. The electronic apparatus of claim 13 , wherein an area of the first color filter is smaller than an area of the second color filter.
19. The imaging device of claim 2 , wherein the third photoelectric region is configured to receive light passing through the third color filter.
20. The method of claim 8 , wherein the third photoelectric region is configured to receive light passing through the third color filter.