Surface acoustic wave device, filter circuit, and electronic component
A surface acoustic wave device includes a piezoelectric material layer, a pair of busbars, a plurality of electrode fingers, and reflectors. The piezoelectric material layer has a thickness that is in a range of 1 to 2.5 times of an acoustic wavelength. A main mode of an elastic wave excited on the piezoelectric material layer by the electrode fingers is a leaky surface acoustic wave. A design variable is set such that a minimum propagation loss frequency where a propagation loss becomes minimum and a frequency of a plate wave spurious formed due to a slow shear wave excited together with the leaky surface acoustic wave are matched. A propagation velocity of a slowest bulk wave of an elastic wave that propagates in a lower layer of the piezoelectric material layer is equal to or more than 1.05 times of a velocity of the leaky surface acoustic wave.
1. A surface acoustic wave device comprising:
a piezoelectric material layer disposed on a supporting substrate;
a pair of busbars formed on an upper surface of the piezoelectric material layer;
a plurality of electrode fingers that mutually extend in a comb shape from the respective busbars toward the opposed busbars; and
reflectors arranged on both sides of formation regions of the plurality of electrode fingers, wherein
the piezoelectric material layer has a thickness that is in a range of 1 to 2.5 times of an acoustic wavelength specified based on an arrangement interval of the plurality of electrode fingers,
a main mode of an elastic wave excited on the piezoelectric material layer by the plurality of electrode fingers is a leaky surface acoustic wave,
a design variable is set such that in the leaky surface acoustic wave, a minimum propagation loss frequency where a propagation loss becomes minimum and a frequency of a plate wave spurious formed due to a slow shear wave excited together with the leaky surface acoustic wave are matched, and
a propagation velocity of a slowest bulk wave of an elastic wave that propagates in a lower layer of the piezoelectric material layer is equal to or more than 1.05 times of a velocity of the leaky surface acoustic wave.
2. The surface acoustic wave device according to claim 1 , wherein
the design variable is selected from a design variable group consisting of a thickness of the piezoelectric material layer, a thickness of the plurality of electrode fingers, an electrode occupancy that is a proportion of an electrode finger width occupying in the arrangement interval of the electrode fingers of the surface acoustic wave device.
3. The surface acoustic wave device according to claim 1 , wherein
the supporting substrate includes a supporting substrate material selected from a supporting substrate material group consisting of silicon, silicon carbide, diamond, sapphire, quartz crystal, alumina, and spinel.
4. The surface acoustic wave device according to claim 1 , wherein
a high-acoustic-velocity layer is formed between the supporting substrate and the piezoelectric material layer, the high-acoustic-velocity layer includes a dielectric or a metallic material and having a thickness equal to or more than one time of the acoustic wavelength.
5. The surface acoustic wave device according to claim 1 , wherein
when the piezoelectric material layer is directly formed on an upper surface of the supporting substrate, a linear expansion coefficient of the supporting substrate is smaller than a linear expansion coefficient in a propagation direction of the leaky surface acoustic wave in the piezoelectric material layer.
6. The surface acoustic wave device according to claim 1 , wherein
the piezoelectric material layer includes LiTaO 3 and has a cut angle in a range of (0±10°, 120 to 144°, 0±10°) in an Euler angle notation.
7. The surface acoustic wave device according to claim 6 , wherein
the plurality of electrode fingers are constituted by an electrode material including aluminum and has a film thickness equal to or more than 9% of the acoustic wavelength.
8. The surface acoustic wave device according to claim 7 , wherein
the thickness of the piezoelectric material layer is in a range of 1.2 to 1.8 times of the acoustic wavelength.
9. The surface acoustic wave device according to claim 1 , wherein
the piezoelectric material layer includes LiNbO 3 and has a cut angle in a range of (0±10°, 129 to 156°, 0±10°) or in a range of (0±10°, −5 to 25°, 0±10°) in an Euler angle notation.
10. The surface acoustic wave device according to claim 1 , wherein
a dielectric film that has one layer or a plurality of layers are loaded on an upper surface side of the plurality of electrode fingers and the reflectors.
11. The surface acoustic wave device according to claim 10 , wherein
at least one layer in the dielectric film includes a dielectric selected from a dielectric material group consisting of silicon oxide, silicon oxynitride, and silicon nitride.
12. The surface acoustic wave device according to claim 10 , wherein
the piezoelectric material layer includes LiTaO 3 and has a cut angle in a range of (0±10°, 120 to 144°, 0±10°) in an Euler angle notation, and the supporting substrate is a crystal.
13. The surface acoustic wave device according to claim 1 , wherein
an acoustic velocity when a shear wave bulk wave propagates in the supporting substrate is slower than a slower one of an acoustic velocity of a second order plate wave due to a slow shear wave or an acoustic velocity of a first order plate wave due to a fast shear wave in the piezoelectric material layer.
14. A filter circuit comprising
a plurality of the surface acoustic wave devices according to claim 1 as resonators.
15. The filter circuit according to claim 14 , wherein
when a proportion of an electrode finger width occupying in the arrangement interval of the plurality of electrode fingers of the surface acoustic wave device is referred to as an electrode occupancy,
the filter circuit has serial resonators and one or more parallel resonators, the serial resonators are one or more of the resonators that are connected in series to an input/output terminal, the parallel resonators are the resonators that are connected in parallel to the serial resonators, and the serial resonators have an electrode occupancy larger than an electrode occupancy of the parallel resonators.
16. The filter circuit according to claim 14 , wherein
when a proportion of an electrode finger width occupying in the arrangement interval of the plurality of electrode fingers of the surface acoustic wave device is referred to as an electrode occupancy,
the filter circuit includes two or more resonators that have resonance frequencies different from one another and includes a resonator having an electrode occupancy larger than an electrode occupancy of another resonator having a different resonance frequency.
17. The filter circuit according to claim 14 , wherein
when a proportion of an electrode finger width occupied in the arrangement interval of the plurality of electrode fingers of the surface acoustic wave device is referred to as an electrode occupancy,
the filter circuit includes two or more resonators that have resonance frequencies different from one another and includes a resonator having an electrode occupancy smaller than an electrode occupancy of another resonator having a different resonance frequency.
18. An electronic component comprising
a plurality of combinations of the filter circuits according to claim 14 , wherein
the electronic component functions as a multiple filter or a multiplexer.