IP Library › Granted Patent US 11,404,522
Granted Patent B2
US 11,404,522 · App. 16/875,034 · Granted Aug 2, 2022

Display device having first and second gates disposed on a first side of an active area and a pattern disposed on a second side of the active area

Inventors: Suyeon Yun (Seoul, KR); Sunghoon Kim (Seoul, KR); Anna Ryu (Hwaseong-si, KR)
Assignee: SAMSUNG DISPLAY CO., LTD.
H01L27/3276G09G3/3266G09G3/3275H01L27/3262H01L27/3265
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Quick Facts
Patent No.
US 11,404,522
App. No.
16/875,034
Granted
Aug 2, 2022
Kind
B2
Abstract

A display device including: a panel including pixels, a pixel including: an LED; a capacitor between a first voltage line and a node; a first transistor between the first voltage line and a first electrode of the LED; a second transistor between a data line and a source of the first transistor; a third transistor between the node and a drain of the first transistor; a fourth transistor between the node and a second voltage line; a fifth transistor between the first voltage line and the source of the first transistor; a sixth transistor between the first electrode and the drain of the first transistor; and a seventh transistor between the second voltage line and the first electrode, the third and fourth transistor including: an active area including metal oxide; first and second gates above the active area; and a pattern below the active area.

Claims (57)

1. A display device, comprising:

a display panel comprising a plurality of pixels, a first pixel of the pixels comprising:

a light emitting diode;

a capacitor connected between a first voltage line and a reference node;

a first transistor connected between the first voltage line and a first, electrode of the light emitting diode;

a second transistor connected between a data line and a source of the first transistor;

a third transistor connected between the reference node and a drain of the first transistor;

a fourth transistor connected between the reference node and a second voltage line;

a fifth transistor connected between the first voltage line and the source of the first transistor;

a sixth transistor connected between the first electrode of the light emitting diode and the drain of the first transistor; and

a seventh transistor connected between the second voltage line and the first electrode of the light emitting diode, each of the third transistor and the fourth transistor comprising:

an active area comprising a metal oxide;

first and second gates disposed on a first side of the active area; and

a pattern disposed on a second side of the active area and overlapping the active area,

wherein an active area of each of the first transistor, the second transistor, the fifth transistor, and the sixth transistor comprises polysilicon, and

wherein the source of the first transistor extends from the active area of the first transistor.

2. The display device of claim 1 , wherein each of the first transistor, the second transistor, the fifth transistor, and the sixth transistor is a P-type transistor, and each of the third transistor and the fourth transistor is an N-type transistor.

3. The display device of claim 1 , wherein the pattern of each of the third and fourth transistors comprises a metal.

4. The display device of claim 1 , wherein the pattern of each of the third and fourth transistors comprises polysilicon.

5. The display device of claim 1 , further comprising a semiconductor pattern disposed under the pattern of each of the third and fourth transistors and overlapping the active area of the third transistor.

6. The display device of claim 5 , wherein the semiconductor pattern extends from the active area of the first transistor.

7. The display device of claim 1 , wherein the seventh transistor comprises:

an active area comprising a metal oxide;

a gate disposed on a first side of the active area; and

a pattern disposed on a second side of the active area.

8. The display device of claim 7 , wherein each of the first transistor, the second transistor, the fifth transistor, and the sixth transistor is a P-type transistor, and each of the third transistor, the fourth transistor, and the seventh transistor is an N-type transistor.

9. The display device of claim 1 , wherein the second voltage line and the pattern of each of the third and fourth transistors are disposed on a same layer and comprise a same material.

10. A display device, comprising:

a display panel comprising a plurality of pixels, a first pixel of the pixels comprising:

a light emitting diode;

a capacitor connected between a first voltage line and a reference node;

a first transistor connected between the first voltage line and a first electrode of the light emitting diode;

a second transistor connected between a data line and a source of the first transistor;

a third transistor connected between the reference node and a drain of the first transistor;

a fourth transistor connected between the reference node and a second voltage line;

a fifth transistor connected between the first voltage line and the source of the first transistor;

a sixth transistor connected between the first electrode of the light emitting diode and the drain of the first transistor; and

a seventh transistor connected between the second voltage line and the first electrode of the light emitting diode, each of the third transistor and the fourth transistor comprising:

an active area comprising a metal oxide;

first and second gates disposed on a first side of the active area; and

a pattern disposed on a second side of the active area and overlapping the active area,

wherein the pattern of each of the third and fourth transistors comprises a conductive material, and a source of the third transistor is electrically connected to the pattern of the third transistor or source of the fourth transistor is electrically connected to the pattern of the fourth transistor.

11. A display device, comprising:

a display panel comprising a plurality of pixels, a first pixel of the pixels comprising:

a light emitting diode;

a capacitor connected between a first voltage line and a reference node;

a first transistor connected between the first voltage line and a first electrode of the light emitting diode;

a second transistor connected between a data line and a source of the first transistor;

a third transistor connected between the reference node and a drain of the first transistor;

a fourth transistor connected between the reference node and a second voltage line;

a fifth transistor connected between the first voltage line and the source of the first transistor;

a sixth transistor connected between the first electrode of the light emitting diode and the drain of the first transistor; and

a seventh transistor connected between the second voltage line and the first electrode of the light emitting diode, each of the third transistor and the fourth transistor comprising:

an active area comprising a metal oxide;

first and second gates disposed on a first side of the active area; and

a pattern disposed on a second side of the active area and overlapping the active area,

wherein the pattern of each of the third and fourth transistors comprises a conductive material, and the first and second gates of the third transistor are electrically connected to the pattern of the third transistor or the first and second gates of the fourth transistor are electrically connected to the pattern of the fourth transistor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 15, 2020
From: YUN, SUYEON; KIM, SUNGHOON; RYU, ANNA
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 052672/0376 →
Priority Claims (1)
KR 10-2019-0057994 · May 17, 2019 · national
Continuity (1)
Related Publication 20200365677A1 · Nov 19, 2020
Cited By (2)
US 12,205,527 US 12,389,773