IC product comprising a single active fin FinFET device and an electrically inactive fin stress reduction structure

1. A device, comprising:

a semiconductor substrate;

a FinFET transistor device positioned above the semiconductor substrate, the FinFET transistor device having a single active fin structure;

an electrically inactive dummy fin structure positioned adjacent the single active fin structure of the FinFET transistor device, the electrically inactive dummy fin structure being electrically inactive with respect to electrical operation of the FinFET transistor having the single active fin structure, wherein the electrically inactive dummy fin structure is not contacted by any conductive structure;

a first isolation structure including a first trench positioned between the single active fin structure of the FinFET transistor device and the electrically inactive dummy fin structure, wherein the first trench is filled with an insulating material having a first vertical thickness;

and

a second isolation structure including a second trench positioned between the electrically inactive dummy fin structure and another fin structure, wherein the second trench is filled with an insulating material having a second vertical thickness greater than the first vertical thickness of the first trench.

2. The device of claim 1 , wherein the single active fin structure has first and second opposing sidewalls, wherein the first sidewall is positioned nearer to the second isolation structure than the second sidewall and wherein the electrically inactive dummy fin structure is positioned adjacent the first sidewall, wherein, when viewed from above, at least a portion of the electrically inactive dummy fin structure is positioned between the single active fin structure and the second isolation structure.

3. The device of claim 1 , wherein the second isolation structure has a first length in a direction corresponding to a gate length direction of the FinFET transistor, and wherein the electrically inactive dummy fin structure has a second length in the direction corresponding to the gate length direction of the FinFET transistor, and wherein the first length and the second length are substantially the same.

4. The device of claim 1 , wherein the second isolation structure has a first length in a direction corresponding to a gate length direction of the FinFET transistor, and wherein the electrically inactive dummy fin structure has a second length in the direction corresponding to the gate length direction of the FinFET transistor, and wherein the first length and the second length are different.

5. The device of claim 1 , wherein the second isolation structure has a first length in a direction corresponding to a gate length direction of the FinFET transistor, and wherein the electrically inactive dummy fin structure has a second length in the direction corresponding to the gate length direction of the FinFET transistor, and wherein the first length is greater than the second length.

6. The device of claim 1 , wherein the single active fin structure is formed with a first fin pitch and wherein the electrically inactive dummy fin structure is positioned a distance equal to a single first fin pitch away from the single active fin structure.

7. The device of claim 1 , further comprising a gate structure positioned around the single active fin and the electrically inactive dummy fin structure.

8. The device of claim 1 , further comprising a gate structure positioned around the single active fin, wherein the gate structure is not positioned around the electrically inactive dummy fin structure.

9. A device, comprising:

a FinFET transistor device, the FinFET transistor device having a single active fin structure;

an electrically inactive dummy fin structure, wherein the electrically inactive dummy fin structure is electrically inactive with respect to electrical operation of the FinFET transistor having the single active fin structure, and wherein the electrically inactive dummy fin structure is not contacted by any conductive structure;

a first isolation structure including a first trench positioned between the electrically inactive dummy fin structure and the single active fin structure of the FinFET transistor device, wherein the first trench is filled with an insulating material having a first vertical thickness;

and

a second isolation structure including a second trench positioned between the electrically inactive dummy fin structure and another fin structure, wherein the second trench is filled with an insulating material having a second vertical thickness greater than the first vertical thickness of the first trench.

10. The device of claim 9 , wherein the electrically inactive dummy fin structure is positioned in a first cell of an integrated circuit product and the single active fin structure is positioned in a second cell of the integrated circuit product.

11. The device of claim 9 , wherein the second isolation structure has a first length in a direction corresponding to a gate length direction of the FinFET transistor and the electrically inactive dummy fin structure has a second length in the direction corresponding to the gate length direction of the FinFET transistor, and wherein the first length and the second length are substantially the same.

12. The device of claim 9 , wherein the second isolation structure has a first length in a direction corresponding to a gate length direction of the FinFET transistor and the electrically inactive dummy fin structure has a second length in the direction corresponding to the gate length direction of the FinFET transistor, and wherein the first length and the second length are different.

13. The device of claim 9 , wherein the second isolation structure has a first length in a direction corresponding to a gate length direction of the FinFET transistor and the electrically inactive dummy fin structure has a second length in the direction corresponding to the gate length direction of the FinFET transistor, and wherein the first length is greater than the second length.

14. The device of claim 9 , wherein the single active fin structure is formed with a first fin pitch and wherein the electrically inactive dummy fin structure is positioned a distance equal to a plurality of first fin pitches away from the single active fin structure.

15. The device of claim 9 , further comprising a gate structure positioned around the single active fin, wherein the gate structure is not positioned around the electrically inactive dummy fin structure.

16. A device, comprising:

a semiconductor substrate;

a first isolation structure positioned in the semiconductor substrate;

a second isolation structure positioned in the semiconductor substrate;

a FinFET transistor device positioned above the semiconductor substrate, the FinFET transistor device having a single active fin structure, wherein the single active fin structure of the FinFET transistor device has first and second opposing sidewalls and wherein the first sidewall is positioned nearer to the second isolation structure than the second sidewall; and

an electrically inactive dummy fin structure positioned adjacent the first sidewall of the single active fin structure of the FinFET transistor device, the electrically inactive dummy fin structure being electrically inactive with respect to electrical operation of the FinFET transistor having the single active fin structure, wherein the electrically inactive dummy fin structure is not contacted by any conductive structure,

wherein the first isolation structure includes a first trench positioned between the electrically inactive dummy fin structure and the single active fin structure of the FinFET transistor device, wherein the first trench is filled with an insulating material having a first vertical thickness;

and

wherein the second isolation structure includes a second trench positioned between the electrically inactive dummy fin structure and another fin structure, wherein the second trench is filled with an insulating material having a second vertical thickness greater than the first vertical thickness of the first trench.

17. The device of claim 16 , wherein, when viewed from above, at least a portion of the electrically inactive dummy fin structure is positioned between the single active fin structure and the isolation structure.