Solid-state image-capturing device and production method thereof, and electronic appliance
A high degree of phase difference detection accuracy can be obtained using a phase difference pixel with a simpler configuration. A solid-state image-capturing device includes a pixel array unit in which a plurality of pixels including a phase difference pixel which is a pixel for focal point detection and an image-capturing pixel which is a pixel for image generation are arranged in a two-dimensional array. In this case, a predetermined layer between a light shielding layer and a micro lens formed in the image-capturing pixel has a higher refraction index than a refraction index of the predetermined layer formed in the phase difference pixel. The technique of the present disclosure can be applied to, for example, a back-illuminated-type solid-state image-capturing device and the like.
1. An imaging device, comprising:
a first back-illuminated pixel comprising:
a first micro lens;
a first photoelectric conversion region; and
a first light shielding layer disposed between the first micro lens and the first
photoelectric conversion region; and
a second back-illuminated pixel comprising:
a second micro lens;
a second photoelectric conversion region; and
a second light shielding layer disposed between the second micro lens and the
second photoelectric conversion region,
wherein an aperture area of the second light shielding layer is larger than an aperture area of the first light shielding layer,
wherein the first back-illuminated pixel further comprises a first filter layer disposed between the first micro lens and the first photoelectric conversion region,
wherein the second back-illuminated pixel further comprises a second filter layer disposed between the second micro lens and the second photoelectric conversion region,
wherein the second filter layer is on a same plane as the first filter layer, and
wherein the second filter layer has an index of refraction higher than an index of refraction of the first filter layer.
2. The imaging device according to claim 1 , wherein a difference between the index of refraction of the first filter layer and the index of refraction of the second filter layer is greater than or equal to 0.2.
3. The imaging device according to claim 1 , wherein an index of refraction of each of the first and second micro lenses is closer to the index of refraction of the first filter layer than the index of refraction of the second filter layer.
4. The imaging device according to claim 1 , wherein the first and second filter layers have a same thickness.
5. The imaging device according to claim 1 , wherein the second filter layer is formed with an inorganic material.
6. The imaging device according to claim 1 , wherein the first filter layer is formed with a resin material.
7. The imaging device according to claim 1 , wherein the aperture area of the first light shielding layer is half of the aperture area of the second light shielding layer.
8. The imaging device according to claim 1 , wherein the first back-illuminated pixel is a pixel for focal point detection and the second back-illuminated pixel is a pixel for image detection.
9. The imaging device according to claim 1 , wherein the first back-illuminated pixel further comprises a first color filter layer and the second back-illuminated pixel further comprises a second color filter layer.
10. The imaging device according to claim 9 , wherein the first filter layer is provided between the first micro lens and the first color filter layer and the second filter layer is provided between the second micro lens and the second color filter layer.
11. The imaging device according to claim 9 , wherein the first color filter layer is provided between the first micro lens and the first filter layer and the second color filter layer is provided between the second micro lens and the second filter layer.
12. An imaging device, comprising:
a first back-illuminated pixel comprising:
a first micro lens;
a first photoelectric conversion region; and
a first light shielding layer disposed between the first micro lens and the first
photoelectric conversion region;
a second back-illuminated pixel comprising:
a second micro lens;
a second photoelectric conversion region; and
a second light shielding layer disposed between the second micro lens and the
second photoelectric conversion region; and
a planarization film provided between the first and second photoelectric conversion regions and the first and second micro lenses,
wherein an aperture area of the second light shielding layer is larger than an aperture area of the first light shielding layer,
wherein the first back-illuminated pixel further comprises a first filter layer disposed between the first micro lens and the first photoelectric conversion region,
wherein the second back-illuminated pixel further comprises a second filter layer disposed between the second micro lens and the second photoelectric conversion region,
wherein the second filter layer is on a same plane as the first filter layer, and
wherein the second filter layer has an index of refraction higher than an index of refraction of the first filter layer.
13. The imaging device according to claim 12 , wherein an index of refraction of the planarization film is closer to the index of refraction of the first filter layer than the index of refraction of the second filter layer.
14. The imaging device according to claim 12 , wherein a difference between the index of refraction of the first filter layer and the index of refraction of the second filter layer is greater than or equal to 0.2.
15. The imaging device according to claim 12 , wherein an index of refraction of each of the first and second micro lenses is closer to the index of refraction of the first filter layer than the index of refraction of the second filter layer.
16. The imaging device according to claim 12 , wherein the first and second filter layers have a same thickness.
17. The imaging device according to claim 12 , wherein the second filter layer is formed with an inorganic material.
18. The imaging device according to claim 12 , wherein the first filter layer is formed with a resin material.
19. The imaging device according to claim 12 , wherein the aperture area of the first light shielding layer is half of the aperture area of the second light shielding layer.
20. An electronic apparatus, comprising:
an imaging device including:
a first back-illuminated pixel comprising:
a first micro lens;
a first photoelectric conversion region; and
a first light shielding layer disposed between the first micro lens and the
first photoelectric conversion region; and
a second back-illuminated pixel comprising:
a second micro lens;
a second photoelectric conversion region; and
a second light shielding layer disposed between the second micro lens and
the second photoelectric conversion region,
wherein an aperture area of the second light shielding layer is larger than an aperture area of the first light shielding layer,
wherein the first back-illuminated pixel further comprises a first filter layer disposed between the first micro lens and the first photoelectric conversion region,
wherein the second back-illuminated pixel further comprises a second filter layer disposed between the second micro lens and the second photoelectric conversion region,
wherein the second filter layer is on a same plane as the first filter layer, and
wherein the second filter layer has an index of refraction higher than an index of refraction of the first filter layer.