Method and device for bonding of substrates
A method and device for bonding a first substrate with a second substrate inside a sealed bonding chamber. The method includes: a) fixing of the first and second substrates, b) arranging of the first and second substrates, c) mutual approaching of the first and second substrates, d) contacting the first and second substrates at respective bond initiation points, e) generating a bonding wave running from the bond initiation points to side edges of the substrates, and f) influencing the bonding wave during course of the bonding wave, wherein targeted influencing of the bonding wave takes place by a regulated and/or controlled change of pressure inside the bonding chamber.
1. A method for bonding a first substrate with a second substrate inside a sealed bonding chamber, said method comprising:
a) fixing of the first and second substrates to respective first and second holding devices;
b) arranging of the first and second substrates relative to each other;
c) mutual approaching of the first and second substrates toward each other;
d) contacting the first substrate with the second substrate at a bond initiation point;
e) generating a bonding wave advancing from the bond initiation point to side edges of the first and second substrates;
f) influencing the bonding wave during advancing of the bonding wave, wherein the influencing of the bonding wave includes a change in an atmosphere inside the bonding chamber; and
g) introducing an inert gas or a slightly reactive gas into the bonding chamber.
2. The method according to claim 1 , wherein said bonding is fusion bonding.
3. The method according to claim 1 , wherein the introducing of the inert gas or the slightly reactive gas includes the use of a nozzle.
4. The method according to claim 1 , wherein the inert gas or the slightly reactive gas includes nitrogen, argon, helium and/or carbon dioxide.
5. A device for the bonding of a first substrate with a second substrate, said device comprising:
a sealed bonding chamber;
first and second holding devices for respectively holding and fixing the first and second substrates, wherein the first and second holding devices are configured for mutual approaching of the first and second substrates toward each other, for contacting of the first and second substrates at a bond initiation point and for generating a bonding wave advancing from the bond initiation point to side edges of the first and second substrates; and
influencing means for influencing the bonding wave during the advancing of the bonding wave, wherein the influencing means include means for changing the atmosphere inside the bonding chamber; and
means for introducing an inert gas or a slightly reactive gas into the bonding chamber.
6. The device according to claim 5 , wherein said bonding is fusion bonding.
7. The device according to claim 5 , wherein the means for introducing the inert gas or the slightly reactive gas into the bonding chamber includes a nozzle.
8. The device according to claim 5 , wherein the inert gas or the slightly reactive gas includes nitrogen, argon, helium and/or carbon dioxide.