Bulk acoustic wave resonator
A bulk acoustic wave resonator includes: a first electrode; a piezoelectric layer disposed on at least a portion of the first electrode; and a second electrode disposed on the piezoelectric layer. The piezoelectric layer contains a dopant, and a value of [a thickness (nm) of the piezoelectric layer×a concentration (at %) of the dopant]/100 is less than or equal to 80.
1. A bulk acoustic wave resonator comprising:
a first electrode;
a piezoelectric layer disposed on at least a portion of the first electrode; and
a second electrode disposed on the piezoelectric layer,
a substrate disposed on an opposite side of the first electrode from the piezoelectric layer and the second electrode, and
an etching prevention portion disposed between the substrate and the first electrode,
wherein the piezoelectric layer contains a dopant, and
a value of [a thickness (nm) of the piezoelectric layer×a concentration (at %) of the dopant]/100 is less than or equal to 80.
2. The bulk acoustic wave resonator of claim 1 , wherein the piezoelectric layer includes aluminum nitride (AlN).
3. The bulk acoustic wave resonator of claim 2 , wherein the dopant is one of, or a combination of one or more of, scandium (Sc), erbium (Er), yttrium (Y), lanthanum (La), titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), and niobium (Nb).
4. The bulk acoustic wave resonator of claim 3 , wherein the dopant is scandium (Sc), and a content of scandium (Sc) in the piezoelectric layer is 0.1 to 30 at %.
5. The bulk acoustic wave resonator of claim 4 , wherein the content of scandium (Sc) in the piezoelectric layer is 10 to 30 at %.
6. The bulk acoustic wave resonator of claim 1 , further comprising a membrane layer disposed between the substrate and the first electrode and defining a cavity together with the substrate.
7. The bulk acoustic wave resonator of claim 6 , wherein the etching prevention is disposed around a periphery of the cavity.
8. The bulk acoustic wave resonator of claim 1 , further comprising a sacrificial layer disposed to surround the etching prevention portion.
9. The bulk acoustic wave resonator of claim 6 , wherein the membrane layer includes a seed layer composed of aluminum nitride (AlN).
10. The bulk acoustic wave resonator of claim 1 , further comprising an insertion layer at least partially disposed below a portion of the piezoelectric layer.
11. The bulk acoustic wave resonator of claim 1 , wherein one or both of the first electrode and the second electrode is formed of one of molybdenum (Mo), ruthenium (Ru), tungsten (W), iridium (Ir), platinum (Pt), copper (Cu), titanium (Ti) tantalum (Ta), nickel (Ni), and chromium (Cr), or alloys thereof.
12. The bulk acoustic wave resonator of claim 1 , wherein a root mean square (RMS) of surface roughness of the first electrode is 5 nm or less.
13. The bulk acoustic wave resonator of claim 1 , wherein one or both of the first electrode and the second electrode includes an aluminum alloy layer containing scandium (Sc).
14. The bulk acoustic wave resonator of claim 1 , further comprising a substrate disposed on an opposite side of the first electrode from the piezoelectric layer and the second electrode, wherein the substrate comprises a reflective layer that overlaps with an active region in which the first electrode, the piezoelectric layer, and the second electrode overlap each other.
15. The bulk acoustic wave resonator of claim 1 , further comprising a substrate disposed on an opposite side of the first electrode from the piezoelectric layer and the second electrode, wherein the substrate comprises a cavity forming groove that overlaps an active region in which the first electrode, the piezoelectric layer, and the second electrode overlap each other.
16. The bulk acoustic wave resonator of claim 15 , further comprising an insulating layer disposed on the cavity forming groove.
17. A bulk acoustic wave resonator comprising:
an input electrode;
an output electrode;
a doped piezoelectric layer disposed between the input electrode and the output electrode;
a substrate disposed on an opposite side of the input electrode from the doped piezoelectric layer and the output electrode; and
a membrane layer disposed between the substrate and the input electrode and defining a cavity together with the substrate,
wherein a product of a thickness of the piezoelectric layer in nanometers and a concentration percentage of a dopant of the piezoelectric layer is less than or equal to 8000, and
wherein the membrane layer includes a seed layer composed of aluminum nitride (AlN).
18. The bulk acoustic wave resonator of claim 17 , wherein the dopant is a rare earth metal or a transition metal.
19. The bulk acoustic wave resonator of claim 18 , wherein the dopant is scandium.
20. The bulk acoustic wave resonator of claim 17 , wherein the concentration percentage of the dopant is between 6.25% and 20% inclusive.
21. A bulk acoustic wave resonator comprising:
a first electrode;
a piezoelectric layer disposed on at least a portion of the first electrode;
a second electrode disposed on the piezoelectric layer; and
an insertion layer partially disposed on and in contact with the first electrode, exposing at least a portion of the first electrode to be in contact with the piezoelectric layer,
wherein the piezoelectric layer contains a dopant, and
a value of [a thickness (nm) of the piezoelectric layer×a concentration (at %) of the dopant]/100 is less than or equal to 80.