Soft-switching voltage-edge-rate-limiting power inverter

1. An auxiliary resonant soft-edge pole inverter circuit, comprising:

a first pair of capacitors connected in parallel with a corresponding pair of main power switching modules, each power switching module comprising a switch and a diode in parallel and sharing a common central node with the first pair of capacitors;

a first pair of auxiliary switches directly connected in series with a first pair of inductors, respectively, to generate resonant current from a DC power source, the first pair of inductors also sharing the common central node;

a second pair of auxiliary switches directly connected in series with a second pair of capacitors, respectively, the second pair of auxiliary switches also sharing the common central node, the auxiliary resonant soft-edge pole inverter circuit producing an alternating current output at the common central node;

a second pair of diodes connected between the second pair of auxiliary switches and the first pair of inductors, respectively;

a third pair of diodes connected in parallel with the second pair of auxiliary switches, respectively, and directly connected to the common central node;

a fourth pair of diodes directly connected between the second pair of auxiliary switches and the DC power source, respectively; and

a fifth pair of diodes directly connected in series with the first pair of auxiliary switches, respectively.

2. The auxiliary resonant soft-edge pole inverter circuit of claim 1 , wherein at least one switch among the first pair of the switches and the second pair of switches comprises an insulated-gate bipolar transistor.

3. The auxiliary resonant soft-edge pole inverter circuit of claim 1 , wherein at least one switch among the first pair of the switches and the second pair of switches comprise a metal-oxide-semiconductor field-effect transistor (MOSFET).

4. A power inverter circuit, comprising:

a plurality of capacitors comprising a first capacitor, a second capacitor, a third capacitor, and a fourth capacitor;

a plurality of switches comprising a first switch, a second switch, a third switch, a fourth switch, a fifth switch, and a sixth switch;

a plurality of inductors comprising a first inductor and a second inductor; and

a plurality of diodes comprising a first diode, a second diode, a third diode, a fourth diode, a fifth diode, a sixth diode, a seventh diode, an eight diode, a ninth diode, and a tenth diode,

wherein the first switch is connected in parallel with the first capacitor and the first diode, and the second switch is connected in parallel with the second capacitor and the second diode,

wherein the third switch is directly connected in series with the first inductor and the fourth switch is directly connected in series with the second inductor,

wherein the fifth switch is directly connected in series with the third capacitor and the sixth switch is directly connected in series with the fourth capacitor,

wherein the first and second switches, the first and second diodes, the first and second capacitors, the first and second inductors, and the fifth and sixth switches share a common node,

wherein the third diode is connected between the third switch and the first inductor, and the fourth diode is connected between the second inductor and the fourth switch,

wherein the fifth diode is connected in parallel with the fifth switch and the sixth diode connected in parallel with the sixth switch, the fifth and sixth diodes both directly connected to the common node,

wherein the seventh diode is directly connected between the fourth switch and a DC power source, and the eighth diode is directly connected between the third switch and the DC power source, and

wherein the ninth diode is directly connected in series with the third switch, and the tenth diode is directly connected in series with the fourth switch.

5. The power inverter circuit of claim 4 , wherein at least one of the plurality of switches comprises an insulated-gate bipolar switches.

6. The power inverter circuit of claim 4 , wherein at least one of the plurality of switches comprise a metal-oxide-semiconductor field-effect transistor (MOSFET).