IP Library Granted Patent US 10,825,957
Granted Patent B1
US 10,825,957 · App. 16/887,877 · Granted Nov 3, 2020

Light-emitting diode

Inventors: Gaolin Zheng (Xiamen, CN); Hou-Jun Wu (Xiamen, CN); Anhe He (Xiamen, CN); Shiwei Liu (Xiamen, CN); Kang-Wei Peng (Xiamen, CN); Su-Hui Lin (Xiamen, CN); Chia-Hung Chang (Xiamen, CN)
Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
H01L33/387H01L33/382H01L33/38H01L33/46
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Quick Facts
Patent No.
US 10,825,957
App. No.
16/887,877
Granted
Nov 3, 2020
Kind
B1
Abstract

A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer and including a plurality of first sub-electrodes, wherein the plurality of first sub-electrodes are divided into one or more groups, and any two adjacent first sub-electrodes in the same group have a same projection distance; a second electrode disposed over and electrically coupled to the second semiconductor layer; a third electrode coupled to the plurality of first sub-electrodes and including one or more third sub-electrodes, wherein one of the third sub-electrodes corresponds to one of said one or more groups of the first sub-electrodes and connects first sub-electrodes in the group; and a fourth electrode coupled to the second electrode.

Claims (31)

1. A light-emitting diode, comprising:

a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer between the first and second semiconductor layers;

a first electrode electrically coupled to the first semiconductor layer and including a plurality of first sub-electrodes, wherein the plurality of first sub-electrodes are divided into one or more groups, and any two adjacent first sub-electrodes in the same group have a same projection distance;

a second electrode disposed over and electrically coupled to the second semiconductor layer;

a third electrode coupled to the plurality of first sub-electrodes and including one or more third sub-electrodes, wherein one of the third sub-electrodes corresponds to one of said one or more groups of the first sub-electrodes and connects first sub-electrodes in the group; and

a fourth electrode coupled to the second electrode.

2. The light-emitting diode of claim 1 , wherein the plurality of first sub-electrodes are divided into a plurality of groups, and each group of the first sub-electrodes has a same arrangement pattern.

3. The light-emitting diode of claim 1 , wherein the plurality of first sub-electrodes are divided into a plurality of groups, and any two adjacent groups have a same distance therebetween.

4. The light-emitting diode of claim 1 , wherein the second electrode includes a plurality of second sub-electrodes, and any two adjacent first sub-electrodes and/or second sub-electrodes have a same projection distance.

5. The light-emitting diode of claim 4 , wherein:

the first electrode and/or second electrode include(s) six sub-electrodes forming a minimal unit of closely-packed hexagonal structure; and

the six sub-electrodes are composed of one or more of the first sub-electrodes, the second sub-electrodes, or a combination of the first sub-electrodes and the second sub-electrodes.

6. The light-emitting diode of claim 5 , wherein the first sub-electrodes and second sub-electrodes are arranged in a staggered manner.

7. The light-emitting diode of claim 6 , wherein:

three first sub-electrodes constitute one minimal unit of equilateral triangle; and

three second sub-electrodes constitute one minimal unit of equilateral triangle.

8. The light-emitting diode of claim 4 , wherein a number of the first sub-electrodes is smaller than or equal to a number of second sub-electrodes.

9. The light-emitting diode of claim 4 , wherein a ratio of the first sub-electrodes to the second sub-electrodes ranges from 0.3-0.9.

10. The light-emitting diode of claim 4 , wherein:

a distance between two adjacent first sub-electrodes is 10-150 μm; and

a distance between two adjacent second sub-electrodes is 10-150 μm.

11. A light-emitting system, comprising a plurality of the light-emitting diodes of claim 1 , wherein the second electrode each comprises a plurality of second sub-electrodes, and the fourth electrode is coupled to the plurality of second sub-electrodes and includes a plurality of fourth sub-electrodes.

12. The light-emitting system of claim 11 , wherein a ratio between the third sub-electrodes to the fourth sub-electrodes is greater than or equal to 2:1.

13. The light-emitting system of claim 11 , wherein the third sub-electrodes have straight or curved strip pattern.

14. The light-emitting system of claim 13 , wherein the curved strip pattern includes an S-shaped pattern or a Z-shaped pattern.

15. The light-emitting system of claim 11 , wherein the third sub-electrodes have same or different shapes.

16. The light-emitting system of claim 11 , wherein adjacent third sub-electrodes have one or more second sub-electrodes placed therebetween.

17. The light-emitting system of claim 16 , wherein the one or more second sub-electrodes placed between have the same or similar patterns with neighboring third sub-electrodes.

18. The light-emitting system of claim 11 , wherein the fourth sub-electrodes have a hollow pattern.

19. The light-emitting system of claim 11 , further comprising a fifth electrode and a sixth electrode, wherein the fifth electrode is coupled to the plurality of third sub-electrodes, and the sixth electrode is coupled to the plurality of fourth sub-electrodes.

20. The light-emitting system of claim 19 , wherein the fifth electrode and sixth electrode have the same shape and are arranged symmetrically.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 20, 2023
From: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
To: HUBEI SAN'AN OPTOELECTRONICS CO., LTD.
Reel/Frame 065296/0622 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 29, 2020
From: ZHENG, GAOLIN; WU, HOU-JUN; HE, ANHE; LIU, SHIWEI; PENG, KANG-WEI; LIN, SU-HUI; CHANG, CHIA-HUNG
To: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
Reel/Frame 052792/0001 →
Priority Claims (2)
CN 2017 2 1377414 U · Oct 24, 2017 · national
CN 2017 2 1379090 U · Oct 24, 2017 · national
Continuity (1)
Continuation 16147763 · Sep 30, 2018