Semiconductor device and method of manufacture
Semiconductor devices and methods which utilize a treatment process of a bottom anti-reflective layer are provided. The treatment process may be a physical treatment process in which material is added in order to fill holes and pores within the material of the bottom anti-reflective layer or else the treatment process may be a chemical treatment process in which a chemical reaction is used to form a protective layer. By treating the bottom anti-reflective layer the diffusion of subsequently applied chemicals is reduced or eliminated, thereby helping to prevent defects that arise from such diffusion.
1. A method of manufacturing a semiconductor device, the method comprising:
forming a first layer over a raised semiconductor region;
applying a bottom anti-reflective layer over the first layer, the bottom anti-reflective layer having a first diffusibility with respect to a first chemical, the bottom anti-reflective layer comprising a polymer with a chromophore group;
patterning the bottom anti-reflective layer;
reducing the first diffusibility to a second diffusibility with respect to the first chemical, wherein the reducing the first diffusibility to the second diffusibility comprises applying either isopropyl alcohol or hexamethyldisilazane to the bottom anti-reflective layer; and
removing a portion of the first layer using the first chemical while the bottom anti-reflective layer is present.
2. The method of claim 1 , wherein the reducing the first diffusibility is done at least in part with a physical process.
3. The method of claim 2 , wherein the physical process fills pores of the bottom anti-reflective layer with a second chemical.
4. The method of claim 3 , wherein the second chemical comprises the isopropyl alcohol.
5. The method of claim 1 , wherein the reducing the first diffusibility is done at least in part with a chemical process.
6. The method of claim 5 , wherein the chemical process reacts a portion of the bottom anti-reflective layer with a first reactant.
7. The method of claim 6 , wherein the first reactant is the hexamethyldisilazane.
8. A method of manufacturing a semiconductor device, the method comprising:
depositing a hard mask layer over a work function layer over a semiconductor fin;
depositing a bottom anti-reflective layer over the hard mask layer;
patterning the bottom anti-reflective layer;
treating the bottom anti-reflective layer, wherein the treating the bottom anti-reflective layer reduces a diffusibility of a first etchant through the bottom anti-reflective layer; and
removing a portion of the hard mask layer with the first etchant while the bottom anti-reflective layer is present.
9. The method of claim 8 , wherein the hard mask layer comprises aluminum oxide.
10. The method of claim 9 , wherein the work function layer comprises lanthanum oxide.
11. The method of claim 8 , wherein the treating the bottom anti-reflective layer is a physical treatment.
12. The method of claim 11 , wherein the physical treatment applies isopropyl alcohol to the bottom anti-reflective layer.
13. The method of claim 8 , wherein the treating the bottom anti-reflective layer is a chemical treatment.
14. The method of claim 13 , wherein the chemical treatment forms a protective layer at least partially within the bottom anti-reflective layer.
15. A method of manufacturing a semiconductor device, the method comprising:
depositing a layer of lanthanum oxide over a semiconductor fin;
depositing a layer of aluminum oxide over the layer of lanthanum oxide;
placing a bottom anti-reflective layer over the layer of aluminum oxide;
patterning the bottom anti-reflective layer;
adding material into the bottom anti-reflective layer after the patterning the bottom anti-reflective layer;
etching a portion of the layer of aluminum oxide while the bottom anti-reflective layer is present; and
etching a portion of the layer of lanthanum oxide while the bottom anti-reflective layer is present.
16. The method of claim 15 , wherein the etching the portion of the layer of aluminum oxide is performed at least in part with ammonium hydroxide.
17. The method of claim 15 , wherein the etching the portion of the layer of lanthanum oxide is performed at least in part with hydrochloric acid.
18. The method of claim 15 , wherein the adding material adds isopropyl alcohol.
19. The method of claim 15 , wherein the adding material reacts the bottom anti-reflective layer with a first reactant.
20. The method of claim 19 , wherein the first reactant is hexamethyldisilazane.