Memory device
A memory device includes a first substrate, a first memory array, a second substrate, and at least one first vertical transistor. The first memory array is disposed on the first substrate. The first memory array includes at least one first word line structure. The first memory array is disposed between the first substrate and the second substrate in a vertical direction. The first vertical transistor is electrically connected with the first word line structure. At least a part of the at least one first vertical transistor is disposed in the second substrate.
1. A memory device, comprising:
a first substrate;
a first memory array disposed on the first substrate, wherein the first memory array comprises at least one first word line structure;
a second substrate, wherein the first memory array is disposed between the first substrate and the second substrate in a vertical direction; and
at least one first vertical transistor electrically connected with the at least one first word line structure, wherein at least a part of the at least one first vertical transistor is disposed in the second substrate, and the at least one first vertical transistor comprises:
a first semiconductor channel penetrating the second substrate in the vertical direction; and
a first gate electrode disposed in the second substrate and surrounding the first semiconductor channel in a horizontal direction.
2. The memory device according to claim 1 , wherein the at least one first vertical transistor further comprises:
a first gate dielectric layer disposed in the second substrate and disposed between the first gate electrode and the first semiconductor channel.
3. The memory device according to claim 1 , wherein the first memory array comprises a plurality of the at least one first word line structures, and the memory device comprises a plurality of the at least one first vertical transistors electrically connected with the plurality of the at least one first word line structures respectively.
4. The memory device according to claim 3 , wherein the first gate electrodes of the plurality of the at least one first vertical transistors are physically and electrically connected with one another in the second substrate.
5. The memory device according to claim 1 , wherein the second substrate comprises a semiconductor region, and the first gate electrode comprises a doped region disposed in the second substrate.
6. The memory device according to claim 5 , further comprising an isolation structure disposed in the second substrate, wherein the isolation structure is disposed between the semiconductor region and the first gate electrode.
7. The memory device according to claim 1 , further comprising:
a word line contact structure disposed between the at least one first vertical transistor and the at least one first word line structure, and the at least one first word line structure is electrically connected with the at least one first vertical transistor via the word line contact structure.
8. The memory device according to claim 7 , wherein the at least one first vertical transistor completely covers the word line contact structure in the vertical direction.
9. The memory device according to claim 7 , wherein the second substrate has a first side and a second side opposite to the first side in the vertical direction, and the first memory array and the word line contact structure are disposed at the first side of the second substrate.
10. The memory device according to claim 9 , further comprising:
a conductive line disposed at the second side of the second substrate; and
a connection structure disposed at the second side of the second substrate and disposed between the conductive line and the at least one first vertical transistor, wherein the conductive line is electrically connected with the at least one first word line structure via the connection structure, the at least one first vertical transistor, and the word line contact structure.
11. The memory device according to claim 1 , further comprising:
a third substrate, wherein the first memory array is disposed between the first substrate and the third substrate in the vertical direction;
a second memory array, wherein the second memory array comprises at least one second word line structure; and
at least one second vertical transistor electrically connected with the at least one second word line structure.
12. The memory device according to claim 11 , wherein the second memory array is disposed on the third substrate, and at least a part of the at least one second vertical transistor is disposed in the second substrate.
13. The memory device according to claim 12 , wherein the at least one second vertical transistor comprises:
a second semiconductor channel penetrating the second substrate in the vertical direction; and
a second gate electrode disposed in the second substrate and surrounding the second semiconductor channel in the horizontal direction.
14. The memory device according to claim 13 , wherein the first gate electrode is physically and electrically connected with the second gate electrode.
15. The memory device according to claim 13 , wherein the first gate electrode is electrically separated from the second gate electrode.
16. The memory device according to claim 12 , wherein the third substrate is disposed between the first substrate and the second substrate in the vertical direction, and the second memory array is disposed between the second substrate and the third substrate in the vertical direction.
17. The memory device according to claim 11 , wherein the second substrate is disposed between the first substrate and the third substrate in the vertical direction, and the second memory array is disposed between the second substrate and the third substrate in the vertical direction.
18. The memory device according to claim 17 , wherein the second memory array is disposed on the second substrate, and at least a part of the at least one second vertical transistor is disposed in the third substrate.