IP Library Granted Patent US 11,540,432
Granted Patent B2
US 11,540,432 · App. 16/890,336 · Granted Dec 27, 2022

Ultrathin conformal coatings for electrostatic dissipation in semiconductor process tools

Inventors: Gayatri Natu (Mumbai, IN); Geetika Bajaj (Mumbai, IN); Prerna Goradia (Mumbai, IN); Darshan Thakare (Maharashtra, IN); David Fenwick (Los Altos Hills, CA); XiaoMing He (Fremont, CA); Sanni Seppaelae (Karlstein am Main, DE); Jennifer Sun (Fremont, CA); Rajkumar Thanu (Santa Clara, CA); Jeff Hudgens (San Francisco, CA); Karuppasamy Muthukamatchy (Madurai, IN); Arun Dhayalan (Austin, TX)
Assignee: Applied Materials, Inc.
H05K9/0064B25J1/00B65G49/07H01J37/20H01J37/32477H01J37/32495H01L21/68707H01L21/68757H05F1/02
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Quick Facts
Patent No.
US 11,540,432
App. No.
16/890,336
Granted
Dec 27, 2022
Kind
B2
Abstract

Disclosed in some embodiments is a chamber component (such as an end effector body) coated with an ultrathin electrically-dissipative material to provide a dissipative path from the coating to the ground. The coating may be deposited via a chemical precursor deposition to provide a uniform, conformal, and porosity free coating in a cost effective manner. In an embodiment wherein the chamber component comprises an end effector body, the end effector body may further comprise replaceable contact pads for supporting a substrate and the contact surface of the contact pads head may also be coated with an electrically-dissipative material.

Claims (40)

1. An end effector for a robot arm, comprising:

an end effector body; and

a coating deposited on a surface of the end effector body, the coating comprising an electrically-dissipative material, wherein the electrically-dissipative material is to provide a dissipative path from the coating to ground, wherein the coating is uniform, conformal, and porosity free, wherein the coating has a thickness ranging from about 20 nm to about 500 nm, and wherein the coating has an electrical resistance ranging from about 1×10 5 ohm/sq to about 1×10 11 ohm/sq.

2. The end effector of claim 1 , wherein the electrical resistance of the coating remains unchanged after thermal cycling at a temperature ranging from about 300° C. to about 700° C.

3. The end effector of claim 1 , wherein the coating has a thickness ranging from about 20 nm to about 200 nm.

4. The end effector of claim 1 , wherein the end effector body comprises an electrically-conductive material, a ceramic, or quartz.

5. The end effector of claim 4 , wherein the end effector body comprises a conductive material that is a metal.

6. The end effector of claim 4 , wherein the end effector body comprises quartz and the coating is transparent.

7. The end effector of claim 1 , wherein the end effector body comprises a ceramic that is bulk alumina.

8. The end effector of claim 7 , wherein the electrically-dissipative material comprises alumina, titania, or a combination thereof.

9. The end effector of claim 8 , wherein the electrically-dissipative material comprises an alternating stack of alumina and titania.

10. The method of claim 9 , wherein a ratio of a thickness of each alumina layer to a thickness of each titania layer in the alternating stack of alumina and titania ranges from about 10:1 to about 1:1.

11. The end effector of claim 1 , wherein the coating is resistant to corrosive plasma.

12. The end effector of claim 1 , further comprising a replaceable contact pad disposed on the end effector body, the replaceable contact pad comprising a contact pad head having a contact surface configured to contact a substrate, and a shaft coupled to the contact pad head and received in an aperture formed in the body of the end effector and extending into a recess.

13. The end effector of claim 12 , wherein the coating is deposited on the surface of the end effector body and on the contact surface of the contact pad head.

14. A method comprising:

depositing a coating onto a surface of an end effector for a robot arm using an atomic layer deposition (ALD) process or a chemical vapor deposition (CVD) process, the coating comprising an electrically-dissipative material,

wherein the electrically-dissipative material is to provide a dissipative path from the coating to ground, wherein the coating is uniform, conformal, and porosity free, wherein the coating has a thickness ranging from about 20 nm to about 500 nm, and wherein the coating has an electrical resistance ranging from about 1×10 5 ohm/sq to about 1×10 11 ohm/sq.

15. The method of claim 14 , wherein depositing the coating using the ALD process comprises performing a deposition cycle comprising:

injecting a first material-containing precursor into a deposition chamber containing the end effector body to cause the first material-containing precursor to adsorb onto the surface of the end effector body to form a first half-reaction;

injecting a first reactant into the deposition chamber to form a second half reaction;

repeating the injecting the first material-containing precursor and the injecting the first reactant one or more times until a first target thickness of a first material-containing layer of the coating is achieved;

injecting a second material-containing precursor into the deposition chamber to cause the second material-containing precursor to adsorb onto the first material-containing layer to form a third half reaction;

injecting a second reactant into the deposition chamber to form a fourth half reaction; and

repeating the injecting the second material-containing precursor and the injecting the second reactant one or more times until a second target thickness of a second material-containing layer of the coating is achieved; and

repeating the deposition cycle one or more times until the thickness ranging from about 20 nm to about 500 nm is achieved.

16. The method of claim 15 , wherein the coating comprises an alternating stack of alumina and titania,

wherein the first material-containing precursor is an aluminum-containing precursor that comprises at least one of trimethylaluminum (TMA), diethylaluminum ethoxide, tris(ethylmethylamido)aluminum, aluminum sec-butoxide, aluminum tribromide, aluminum trichloride, triethylaluminum (TEA), triisobutylaluminum, trimethylaluminum, or tris(diethylamido)aluminum;

wherein the second material-containing precursor is a titanium-containing precursor that comprises at least one of tetrakis(dimethylamido)titanium;

wherein the first reactant and the second reactant comprises, independently, at least one of water, ozone, alcohol, and oxygen.

17. The method of claim 16 , wherein a ratio of a thickness of each alumina layer to a thickness of each titania layer in the alternating stack of alumina and titania ranges from about 10:1 to about 1:1.

18. A substrate processing system, comprising:

a chamber;

a robot disposed in the chamber; and

a robot arm connected to the robot, the robot arm comprising:

an end effector body;

a replaceable contact pad disposed on the end effector body, the replaceable contact pad comprising a contact pad head having a contact surface configured to contact a substrate, and a shaft coupled to the contact pad head and received in an aperture formed in the body of the end effector and extending into a recess; and

a coating deposited on a surface of the end effector body and on the contact surface of the contact pad head, the coating comprising an electrically-dissipative material, wherein the electrically-dissipative material is to provide a dissipative path from the coating to ground, and wherein the coating is uniform and conformal.

19. The substrate processing system of claim 18 , wherein the end effector body comprises an electrically-conductive material, a ceramic, or quartz, wherein the coating has an electrical-resistance ranging from about 1×10 5 ohm/sq to about 1×10 11 ohm/sq, wherein the coating has a thickness ranging from about 20 nm to about 500 nm, and wherein the coating is porosity free.

20. The substrate processing system of claim 18 , wherein the end effector body comprises bulk alumina, and wherein the electrically-dissipative material comprises an alternating stack of alumina and titania.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 8, 2020
From: NATU, GAYATRI; BAJAJ, GEETIKA; GORADIA, PRERNA; THAKARE, DARSHAN; FENWICK, DAVID; HE, XIAOMING; SEPPAELAE, SANNI; SUN, JENNIFER; THANU, RAJKUMAR; HUDGENS, JEFF; MUTHUKAMATCHY, KARUPPASAMY; DHAYALAN, ARUN
To: APPLIED MATERIALS, INC.
Reel/Frame 054012/0774 →
Priority Claims (1)
IN 201941038863 · Sep 26, 2019 · national
Continuity (1)
Related Publication 20210100141A1 · Apr 1, 2021
Cited By (1)
US 12,588,463