Ultrathin conformal coatings for electrostatic dissipation in semiconductor process tools

1. A coated chamber component, comprising:

a chamber component; and

a coating deposited on a surface of the chamber component, the coating comprising an electrically-dissipative material,

wherein the electrically-dissipative material is to provide a dissipative path from the coating to a ground,

wherein the coating is uniform, conformal, and porosity free,

wherein the coating has a thickness ranging from about 10 nm to about 900 nm,

wherein the coating has an electrical surface/sheet resistance ranging from about 1×10 5 ohm/sq to about 1×10 11 ohm/sq, and

wherein the coating comprises one or more first material-containing layers and one or more second material-containing layers, the one or more first material-containing layers consisting of a metal or a metal alloy comprising at least one of Al, Y—Zr, Mg—Al, or Ca—Al, and the one or more second material-containing layers consisting of a transition metal, a rare earth, a main group metal, a semiconductor, or an alloy thereof.

2. The coated chamber component of claim 1 , wherein the electrical surface/sheet resistance of the coating remains unchanged after thermal cycling at a temperature ranging from about 300° C. to about 700° C.

3. The coated chamber component of claim 1 , wherein the coating has a thickness ranging from about 20 nm to about 900 nm.

4. The coated chamber component of claim 1 , wherein the chamber component comprises an electrically-conductive material, a ceramic, a polymer, or quartz.

5. The coated chamber component of claim 1 , wherein the coating has a Vickers hardness ranging from about 500 kg/mm 2 to about 1000 kg/mm 2 .

6. The coated chamber component of claim 1 , wherein the electrical surface/sheet resistance of the coating is uniform as evidenced by electrical surface/sheet resistance variations across the coating of less than about ±35%.

7. The coated chamber component of claim 1 , wherein the electrically-dissipative material comprises an alternating stack of the one or more first material-containing layers and the one or more second material-containing layers.

8. The coated chamber component of claim 7 , wherein a ratio of a thickness of each first material-containing layer to a thickness of each second material-containing layer in the alternating stack ranges from about 50:1 to about 1:50.

9. The coated chamber component of claim 1 , wherein the one or more second material-containing layers consist of one or more of Ti, Fe, Co, Cu, Ni, Mn, V, Y, Nb, In, Sn, Fe—Co, La—Ta.

10. The coated chamber component of claim 1 , wherein the coating is resistant to corrosive plasma.

11. The coated chamber component of claim 1 , wherein the one or more first material-containing layers consist of Al, and the one or more second material-containing layers consist of Ti.

12. The coated chamber component of claim 1 , wherein the one or more first material-containing layers consist of aluminum hydroxide, and the one or more second material-containing layers consist of metallic titanium.

13. A method comprising:

depositing a coating onto a surface of a chamber component using an atomic layer deposition (ALD) process, a chemical vapor deposition (CVD) process, a plasma enhanced atomic layer deposition (PEALD) process, metal organic chemical vapor deposition (MOCVD), or a molecular beam epitaxy (MBE) process, the coating comprising an electrically-dissipative material,

wherein the electrically-dissipative material is to provide a dissipative path from the coating to ground, wherein the coating is uniform, conformal, and porosity free, wherein the coating has a thickness ranging from about 10 nm to about 900 nm, and wherein the coating has an electrical surface/sheet resistance ranging from about 1×10 5 ohm/sq to about 1×10 11 ohm/sq, and

wherein the coating comprises one or more first material-containing layers and one or more second material-containing layers, the one or more first material-containing layers consisting of a metal or a metal alloy comprising at least one of Al, Y—Zr, Mg—Al, or Ca—Al, and the one or more second material-containing layers consisting of a transition metal, a rare earth, a main group metal, a semiconductor, or an alloy thereof.

14. The method of claim 13 , wherein depositing the coating using the ALD process comprises performing a deposition cycle comprising:

injecting a first material-containing precursor into a deposition chamber containing the chamber component to cause the first material-containing precursor to adsorb onto the surface of the chamber component to form a first half-reaction;

injecting a first reactant into the deposition chamber to form a second half reaction; repeating the injecting the first material-containing precursor and the injecting the first reactant one or more times until a first target thickness of the one or more first material-containing layers of the coating is achieved;

injecting a second material-containing precursor into the deposition chamber to cause the second material-containing precursor to adsorb onto the one or more first material-containing layers to form a third half reaction;

injecting a second reactant into the deposition chamber to form a fourth half reaction; and

repeating the injecting the second material-containing precursor and the injecting the second reactant one or more times until a second target thickness of the one or more second material-containing layers of the coating is achieved; and

repeating the deposition cycle one or more times until the thickness ranging from about 20 nm to about 500 nm is achieved.

15. The method of claim 13 , wherein the ratio of the first target thickness to the second target thickness ranges from about 50:1 to about 1:50.

16. The method of claim 13 , wherein the first target thickness and the second target thickness may independently vary from one deposition cycle to another deposition cycle.

17. The method of claim 13 , wherein the electrical surface/sheet resistance of the coating is uniform as evidenced by electrical surface/sheet resistance variations across the coating of less than about ±35%.

18. The method of claim 13 , wherein the one or more second material-containing layers consist of one or more of Ti, Fe, Co, Cu, Ni, Mn, V, Y, Nb, In, Sn, Fe—Co, La—Ta.

19. An electrically-dissipative coating comprising an electrically-dissipative material, wherein the coating is uniform, conformal, and porosity free, wherein the coating has a thickness ranging from about 20 nm to about 500 nm, and wherein the coating has an electrical surface/sheet resistance ranging from about 1×10 5 ohm/sq to about 1×10 11 ohm/sq, and

wherein the coating comprises one or more first material-containing layers and one or more second material-containing layers, the one or more first material-containing layers consisting of a metal or a metal alloy comprising at least one of Al, Y—Zr, Mg—Al, or Ca—Al, and the one or more second material-containing layers consisting of a transition metal, a rare earth, a main group metal, a semiconductor, or an alloy thereof.

20. The electrically-dissipative coating of claim 19 , wherein the electrically-dissipative material comprises an alternating stack of the one or more first material-containing layers and the one or more second material-containing layers,

wherein the one or more second material-containing layers consist of one or more of Ti, Fe, Co, Cu, Ni, Mn, V, Y, Nb, In, Sn, Fe—Co, La—Ta,

wherein the coating has a Vickers hardness ranging from about 500 kg/mm 2 to about 1000 kg/mm 2 , and

wherein the electrical surface/sheet resistance of the coating is uniform as evidenced by electrical surface/sheet resistance variations across the coating of less than about ±35%.