Solid-state image sensor, imaging device, and electronic device
The present technology relates to a solid-state image sensor, an imaging device, and an electronic device capable of switching FD conversion efficiency in all pixels of a solid-state image sensor. A photodiode performs photoelectric conversion on incident light. A floating diffusion (FD) stores charge obtained by the photodiode. FD2, which is a second FD to which the capacity of an additional capacitor MIM is added, adds the capacity to the FD. The additional capacitor MIM is constituted by a first electrode formed by a wiring layer and a second electrode formed by a metallic light blocking film provided on a surface of a substrate on which the photodiode is formed. Switching between the FD and FD+FD2 allows switching of the FD conversion efficiency. The present technology is applicable to a CMOS image sensor.
1. A light detecting device, comprising:
a photoelectric conversion region;
a transfer transistor coupled to the photoelectric conversion region;
a floating diffusion region coupled to the transfer transistor;
a switch transistor coupled to the floating diffusion region;
a capacitor configured to couple to the floating diffusion region via the switch transistor;
a reset transistor coupled to the floating diffusion region;
an amplification transistor coupled to the floating diffusion region; and
a wiring layer including:
a first layer including a first wiring coupled to the switch transistor;
a second layer including a second wiring; and
a third layer including a third wiring coupled to the transfer transistor,
wherein the capacitor includes the first wiring and the second wiring,
wherein the first layer is different than the third layer, and
wherein a contact region of the floating diffusion region is disposed between the switch transistor and the reset transistor.
2. The light detecting device according to claim 1 , further comprising a selection transistor.
3. The light detecting device according to claim 1 , wherein the switch transistor, the floating diffusion region, the reset transistor and the amplification transistor all share a same well region.
4. The light detecting device according to claim 2 , wherein the switch transistor, the contact region of the floating diffusion region, the reset transistor and the amplification transistor are arranged in this order in a first direction.
5. The light detecting device according to claim 4 , wherein the photoelectric conversion region and the transfer transistor are arranged in this order in a second direction perpendicular to the first direction.
6. The light detecting device according to claim 4 , wherein the selection transistor is disposed along the first direction where the switch transistor, the contact region of the floating region, diffusion the reset transistor and the amplification transistor are arranged.
7. The light detecting device according to claim 1 , wherein the second wiring is coupled to a fixed potential.
8. The light detecting device according to claim 1 , wherein the first wiring has a rectangular shape.
9. The light detecting device according to claim 1 , wherein the floating diffusion region is a charge-to-voltage converter that converts a charge received from the transfer transistor into an electrical signal.
10. The light detecting device according to claim 1 , wherein the floating diffusion region is provided between the photoelectric conversion region and the capacitor.
11. A light detecting device, comprising:
a photoelectric conversion region;
a transfer transistor coupled to the photoelectric conversion region;
a floating diffusion region coupled to the transfer transistor;
a switch transistor coupled to the floating diffusion region;
a capacitor configured to couple to the floating diffusion region via the switch transistor;
a reset transistor coupled to the floating diffusion region;
an amplification transistor coupled to the floating diffusion region; and
a wiring layer including:
a first layer including a first wiring coupled to the switch transistor;
a second layer including a second wiring; and
a third layer including a third wiring coupled to the transfer transistor,
wherein the capacitor includes the first wiring and the second wiring, and
wherein the first layer is different than the third layer.
12. The light detecting device according to claim 11 , further comprising a selection transistor.
13. The light detecting device according to claim 11 , wherein the switch transistor, the floating diffusion region, the reset transistor and the amplification transistor all share a same well region.
14. The light detecting device according to claim 12 , wherein the switch transistor, a contact region of the floating diffusion region, the reset transistor and the amplification transistor are arranged in this order.
15. The light detecting device according to claim 11 , wherein the first wiring has a rectangular shape.
16. The light detecting device according to claim 11 , wherein the second wiring is coupled to a fixed potential.
17. A light detecting device, comprising:
a photoelectric conversion region;
a transfer transistor coupled to the photoelectric conversion region;
a floating diffusion region coupled to the transfer transistor;
a switch transistor coupled to the floating diffusion region;
a capacitor configured to couple to the floating diffusion region via the switch transistor;
a reset transistor coupled to the floating diffusion region;
an amplification transistor coupled to the floating diffusion region; and
a wiring layer including:
a first layer including a first wiring coupled to the switch transistor; and
a second layer including a second wiring,
wherein the capacitor includes the first wiring and the second wiring, and
wherein a contact region of the floating diffusion region is disposed between the switch transistor and the reset transistor.
18. The light detecting device according to claim 17 , wherein the second wiring is coupled to a fixed potential.
19. The light detecting device according to claim 17 , wherein the switch transistor, the floating diffusion region, the reset transistor and the amplification transistor all share a same well region.
20. The light detecting device according to claim 17 , wherein the first wiring has a rectangular shape.