Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50. Pa.
1. A method of forming an electronic device structure, the method comprising:
providing a substrate on a susceptor within a reaction chamber, the substrate having features thereon and comprising a layer comprising silicon nitride overlying the features;
providing a pole-type antenna above the susceptor, the pole-type antenna extending across two sides of the reaction chamber and positioned parallel to the susceptor;
forming activated species by irradiating a reforming gas with microwave radiation for a duration of between 3 and 10 minutes; and
exposing the layer comprising silicon nitride to the activated species,
wherein a pressure within the reaction chamber during the step of forming activated species is less than 50 Pa,
wherein microwaves of the microwave radiation are emitted from the pole-type antenna.
2. The method according to claim 1 , wherein the reforming gas comprises hydrogen and one or more of helium and argon.
3. The method according to claim 1 , wherein the reforming gas comprises hydrogen and helium.
4. The method according to claim 1 , wherein the reforming gas comprises a nitrogen source gas.
5. The method according to claim 4 , wherein the nitrogen source gas is selected from one or more of the group consisting of N 2 and NH 3 .
6. The method according to claim 1 , wherein the reforming gas consists essentially of hydrogen, a nitrogen source gas, and one or more of helium and argon.
7. The method according to claim 1 , wherein the reforming gas comprises about 5% to about 95% by volume of He.
8. The method according to claim 1 , wherein the reforming gas comprises about 20% to about 70% by volume of He.
9. The method according to claim 1 , wherein the pole-type antenna is enclosed in a tube, the tube comprising quartz or ceramic.
10. The method according to claim 1 , wherein the reforming gas comprises about 40% to about 60% by volume of H.
11. The method according to claim 1 , wherein the reforming gas comprises greater than 0% and less than 10% by volume of nitrogen source gas.
12. The method according to claim 1 , further comprising providing at least one additional pole-type antenna above the susceptor, wherein the pole-type antennas are provided parallel to each other.
13. The method according to claim 1 , wherein the microwave radiation has a frequency of about 800 MHz to about 10 GHz.
14. The method according to claim 1 , wherein a microwave power emitting the microwave radiation is between about 500 W and about 10,000 W.
15. The method according to claim 1 , wherein the pole-type antenna is provided at a distance of about 5 cm to about 10 cm from the susceptor.
16. The method according to claim 1 , wherein no RF power is supplied to the susceptor during the step of forming activated species.
17. The method according to claim 1 , wherein the pressure within the reaction chamber during the step of forming activated species is between about 1 Pa and about 30 Pa.
18. The method according to claim 1 , wherein a temperature of a susceptor within the reaction chamber during the step of forming activated species is between about 20° C. and about 400° C.
19. The method according to claim 1 , further comprising a step of depositing the silicon nitride film on the substrate by plasma-enhanced atomic layer deposition (PE-ALD) in a PE-ALD apparatus, and then transferring the substrate to a reaction space in a microwave plasma apparatus without exposing the substrate to air.
20. The method according to claim 1 , wherein the features comprise trenches, each trench having a width of about 10 nm to about 100 nm, a depth of about 30 nm to about 1000 nm, and/or an aspect ratio of 3 to 100 or about 3 to about 20.
21. The method according to claim 1 , further comprising subjecting a reformed silicon nitride layer to a wet etching process.
22. The method according to claim 1 conducted during a process of forming a 3D NAND device.
23. The method according to claim 1 conducted during a process of forming a Fin-FET device.
24. A system for performing the method of claim 1 .