Generating high dynamic voltage boost

1. An integrated circuit comprising:

a driving circuit having a first stage and a second stage, the driving circuit configured to provide an overdrive voltage, wherein the first stage comprises a depletion-mode high electron mobility transistor (D-HEMT) and the first stage and the second stage have a shared voltage input;

a charge pump circuit coupled between the D-HEMT and the second stage, wherein the charge pump circuit is configured to generate a dynamic voltage greater than the overdrive voltage; and

a bootstrap circuit coupled to the charge pump circuit, wherein the bootstrap circuit is configured to increase the overdrive voltage of the driving circuit.

2. The integrated circuit of claim 1 , further comprising a power transistor coupled to the driving circuit, wherein the overdrive voltage drives the power transistor.

3. The integrated circuit of claim 1 , wherein the bootstrap circuit comprises:

a bootstrap diode having a cathode terminal coupled to the second stage; and

a bootstrap capacitor coupled between the cathode terminal and a output pin of the driving circuit.

4. The integrated circuit of claim 1 , wherein the first stage further comprises a first enhanced-mode high electron mobility transistor (E-HEMT) and the second stage comprises a second and third enhanced-mode high electron mobility transistor (E-HEMT), wherein a gate terminal of the D-HEMT is coupled to a source/drain terminal of the first E-HEMT and a source/drain terminal of the D-HEMT is coupled to the charge pump circuit.

5. The integrated circuit of claim 4 , wherein the first E-HEMT and the second E-HEMT are in an off-state at a zero gate-source voltage and wherein the D-HEMT is operational when a voltage of zero is applied to a gate of the D-HEMT and non-operational when a negative voltage is applied to the gate.

6. The integrated circuit of claim 1 , wherein the driving circuit further comprises a third stage having a pair of enhanced-mode high electron mobility transistors (E-HEMT).

7. The integrated circuit of claim 3 , wherein the driving circuit further comprises a fourth stage having a first enhanced-mode high electron mobility transistor (E-HEMT), a second E-HEMT, and a third E-HEMT, the first E-HEMT having a first source/drain terminal and a gate terminal coupled to the cathode terminal of the bootstrap diode.

8. The integrated circuit of claim 1 , further comprising an internal bootstrap circuit having a diode coupled between the charge pump circuit and the first stage and a capacitor coupled between the diode and a reference voltage pin.

9. The integrated circuit of claim 1 , further comprising a boot-strapped inverting buffer circuit configured to reduce an input load of the first stage.

10. A method comprising:

receiving, by a charge pump circuit of an integrated circuit, an input voltage;

generating, by the charge pump circuit, a dynamic charge pump voltage configured to drive a first voltage stage and a second voltage stage of the integrated circuit, wherein the first voltage stage comprises a depletion-mode high electron mobility transistor (D-HEMT), and the charge pump circuit is coupled between the D-HEMT and the second voltage stage;

providing, by charge pump circuit, the dynamic charge pump voltage to a bootstrap circuit, wherein the bootstrap circuit is coupled to the charge pump circuit;

generating, by the bootstrap circuit, a boosted voltage based on the dynamic charge pump voltage to the first stage;

receiving, by the first voltage stage and the second voltage stage, a shared voltage input; and

generating, by the second voltage stage, an overdrive voltage based on the boosted voltage to drive a power transistor.

11. The method of claim 10 , wherein the overdrive voltage exceeds a minimum voltage threshold of the power transistor.

12. The method of claim 10 , further comprising:

minimizing a static current of the first stage and the second stage; and

modifying, by the bootstrap circuit, an impedance of the first stage to minimize the static current.

13. A system comprising:

a high-side driver having a plurality of staged high electron mobility transistors (HEMTs), the high-side driver configured to provide an overdrive voltage;

a charge pump circuit coupled between a first portion of the plurality of staged HEMTs and a second portion of the plurality of staged HEMTs, the first portion comprising a depletion-mode HEMT (D-HEMT), the charge pump is configured to generate a dynamic charge-pump voltage greater than the overdrive voltage, wherein the first portion and the second portion have a shared voltage input; and

a power transistor coupled between the high-side driver and one or more electrical components, wherein the power transistor is configured to provide a voltage based on the overdrive voltage to the one or more electronic components.

14. The system of claim 13 , further comprising a bootstrap circuit coupled between an output pin and the charge pump circuit configured to increase the overdrive voltage of the high-side driver.

15. The system of claim 14 , wherein the bootstrap circuit comprises:

a bootstrap diode having a cathode terminal coupled to one of the plurality of staged HEMTs; and

a bootstrap capacitor coupled between the cathode terminal and the output pin of the high-side driver.

16. The system of claim 13 , wherein one of the plurality of staged HEMTs comprises a first enhanced-mode high electron mobility transistor (E-HEMT), and another of the plurality of the staged HEMTs comprises a second and third enhanced-mode high electron mobility transistor (E-HEMT), wherein a gate terminal of the D-HEMT is coupled to a source/drain terminal of the first E-HEMT and a source/drain terminal of the D-HEMT is coupled to the charge pump circuit.

17. The system of claim 16 , wherein the first E-HEMT and the second E-HEMT are in an off-state at a zero gate-source voltage and wherein the D-HEMT is operational when a voltage of zero is applied to a gate of the D-HEMT and non-operational when a negative voltage is applied to the gate.

18. The integrated circuit of claim 13 , wherein the plurality of staged HEMTS includes a pair of enhanced-mode high electron mobility transistors (E-HEMT).

19. The system of claim 16 , wherein the plurality of staged HEMTs further comprises a fourth stage having a first enhanced-mode high electron mobility transistor (E-HEMT), a second E-HEMT, and a third E-HEMT, the first E-HEMT having a first source/drain terminal and a gate terminal coupled to the cathode terminal of the bootstrap diode.

20. The system of claim 13 , further comprising an internal bootstrap circuit having a diode coupled between the charge pump circuit and one of the plurality of HEMTs and a capacitor coupled between the diode and a reference voltage pin.