Oversized via as through-substrate-via (TSV) stop layer
The present disclosure, in some embodiments, relates to an integrated chip structure. The integrated chip structure includes a standard via disposed on a first side of a substrate. An oversized via is disposed on the first side of the substrate and is laterally separated from the standard via. The oversized via has a larger width than the standard via. An interconnect wire vertically contacting the oversized via. A through-substrate via (TSV) extends from a second side of the substrate, and through the substrate, to physically contact the oversized via or the interconnect wire. The TSV has a minimum width that is smaller than a width of the oversized via.
1. An integrated chip structure, comprising:
a standard via disposed on a first side of a substrate;
an oversized via disposed on the first side of the substrate and laterally separated from the standard via, wherein the oversized via has a larger width than the standard via;
an interconnect wire vertically contacting the oversized via;
a through-substrate via (TSV) extending from a second side of the substrate, and through the substrate, to a bottom surface of the TSV that physically contacts the oversized via or the interconnect wire, wherein the TSV has a minimum width that is smaller than a width of the oversized via; and
wherein the oversized via has a top surface that is coupled to outermost sidewalls of the oversized via and that faces towards the TSV, the top surface laterally extending past opposing edges of the bottom surface of the TSV.
2. The integrated chip structure of claim 1 , wherein the oversized via is vertically between the interconnect wire and the first side of the substrate.
3. The integrated chip structure of claim 1 , wherein an imaginary horizontally extending line, which is parallel to the top surface of the oversized via, extends through sidewalls of the oversized via and through sidewalls of the standard via.
4. The integrated chip structure of claim 1 , wherein the TSV extends vertically through the interconnect wire and into the oversized via.
5. The integrated chip structure of claim 1 , wherein the TSV extends vertically through the oversized via and into the interconnect wire.
6. The integrated chip structure of claim 1 , further comprising:
a gate structure disposed on the substrate;
a first inter-level dielectric (ILD) layer laterally surrounding the gate structure; and
a second ILD layer on the first ILD layer, wherein the TSV extends through the first ILD layer to contact the oversized via at a position that is separated from the second ILD layer by the oversized via.
7. The integrated chip structure of claim 1 , wherein the interconnect wire and the oversized via collectively have a thickness that is greater than or equal to approximately 1,000 Angstroms.
8. The integrated chip structure of claim 1 , wherein the TSV has sidewalls that extend from within the substrate to outward past the first side of the substrate and that are coupled to the bottom surface of the TSV, the bottom surface of the TSV being vertically separated from the first side of the substrate by a non-zero distance.
9. The integrated chip structure of claim 1 , wherein the oversized via has a first width that is between approximately 2,000% and approximately 5,000% larger than a second width of the standard via.
10. The integrated chip structure of claim 1 , wherein the TSV punctures the top surface of the oversized via or a top surface of the interconnect wire.
11. A method of forming an integrated chip structure, comprising:
forming an interconnect wire within a first inter-level dielectric (ILD) layer formed along a first side of a substrate;
forming a standard via within a second ILD layer formed along the first side of the substrate;
forming an oversized via within the second ILD layer, wherein the oversized via has a larger width than the standard via;
etching the substrate to form a through-substrate via (TSV) opening extending through the substrate to the interconnect wire or the oversized via, wherein the interconnect wire contacts the oversized via; and
forming one or more conductive materials within the TSV opening to define a through-substrate via (TSV).
12. The method of claim 11 , wherein the first ILD layer is between the second ILD layer and the substrate.
13. The method of claim 11 , wherein the second ILD layer is between the first ILD layer and the substrate.
14. An integrated chip structure, comprising:
a standard via disposed on a first side of a substrate;
an oversized via disposed on the first side of the substrate and laterally separated from the standard via, wherein the oversized via has a larger width than the standard via;
an interconnect wire vertically contacting the oversized via;
a through-substrate via (TSV) extending from a second side of the substrate, and through the substrate, to physically contact the oversized via or the interconnect wire, wherein the TSV has a minimum width that is smaller than a width of the oversized via; and
wherein the TSV has a rounded surface that physically contacts the interconnect wire or the oversized via.
15. The integrated chip structure of claim 14 , wherein the oversized via extends along sidewalls of the TSV and along a lower surface of the TSV that is laterally between the sidewalls of the TSV.
16. The integrated chip structure of claim 14 , further comprising:
a gate structure disposed on the first side of the substrate, wherein the TSV vertically extends from between sidewalls of the substrate to past a surface of the gate structure that faces away from the substrate.
17. The integrated chip structure of claim 14 , further comprising:
one or more middle-end-of-the-line (MEOL) interconnects disposed on the first side of the substrate, wherein the TSV vertically extends from between sidewalls of the substrate to past the one or more MEOL interconnects.
18. The integrated chip structure of claim 14 , further comprising:
a first inter-level dielectric (ILD) layer on the first side of the substrate;
a second ILD layer on the first ILD layer, wherein the first ILD layer has a higher dielectric constant than the second ILD layer; and
wherein the TSV extends through the first ILD layer to contact the oversized via at a position that is separated from the second ILD layer by the oversized via.
19. The integrated chip structure of claim 18 , wherein the first ILD layer is an oxide or low-k dielectric material and the second ILD layer is an extreme low-k (ELK) dielectric material or an ultra low-k (ULK) dielectric material.
20. The integrated chip structure of claim 14 , further comprising:
a liner disposed along sidewalls of the TSV and vertically extending through a first ILD layer of a dielectric structure disposed on the first side of the substrate, wherein the liner is vertically separated from the oversized via by a non-zero distance.