Semiconductor device including electromagnetic interference (EMI) shielding and method of manufacture

1. A semiconductor device comprising:

a redistribution substrate;

a plurality of modules on a first side of the redistribution substrate, the plurality of modules being interconnected through the redistribution substrate;

a conductive connector on the first side of the redistribution substrate;

an encapsulant encapsulating multiple sides of the conductive connector and the plurality of modules, the encapsulant extending over a second side of the conductive connector, the second side facing away from the redistribution substrate; and

a shield extending through the encapsulant to make physical contact with the conductive connector, wherein each sidewall of the shield that is located below an uppermost surface of the encapsulant extends away from the conductive connector a same distance and each portion of each sidewall of the shield is located directly over the conductive connector, wherein the shield located below the upper most surface of the encapsulant forms a “U”-shape, wherein the plurality of modules comprises a first system on chip module, a passive module, a second system on chip module, and an integrated passive device.

2. The semiconductor device of claim 1 , wherein the conductive connector is a conductive pillar.

3. The semiconductor device of claim 2 , wherein the conductive connector is connected to the redistribution substrate through a seed layer.

4. The semiconductor device of claim 2 , wherein the conductive connector is connected to the redistribution substrate through a solder paste.

5. The semiconductor device of claim 1 , wherein a first one of the plurality of modules is a system on chip module.

6. The semiconductor device of claim 5 , wherein a second one of the plurality of modules is an integrated passive device.

7. The semiconductor device of claim 1 , wherein the conductive connector is a conductive cube that extends into the encapsulant a distance of between about 10 μm an about 1950 μm.

8. A semiconductor device comprising:

a conductive connector, the conductive connector having a first height of between about 50 μm and about 500 μm;

a redistribution substrate in electrical connection with the conductive connector;

an encapsulant over the redistribution substrate, the encapsulant extending away from the redistribution substrate a first distance larger than the first height, the encapsulant covering and in physical contact with sidewalls of the conductive connector;

a first module embedded in the encapsulant and electrically connected to the redistribution substrate, the first module having a second height less than the first distance, the first module having a first module height of between about 30 μm and about 800 μm;

a second module embedded in the encapsulant, the second module having a second module height of between about 50 μm and about 1000 μm, the second module height being less than the first module height;

a third module embedded in the encapsulant, the third module having a third module height of between about 30 μm and about 800, the third module height being greater than the second module height;

a fourth module embedded in the encapsulant, the fourth module having a fourth module height of between about 50 μm and about 1000 μm, the fourth module height being less than the first module height, the second module height, and the third module height;

a shield extending through the encapsulant to make physical contact with the conductive connector and also extending along a top surface of the encapsulant to be located over the first module and the second module, wherein each straight sidewall of the shield in physical contact with and extending through the encapsulant has an equal length less than the first distance of the encapsulant.

9. The semiconductor device of claim 8 , wherein the shield extends along a sidewall of the encapsulant, the sidewall being at a right angle to the top surface.

10. The semiconductor device of claim 8 , further comprising a seed layer located between the conductive connector and the redistribution substrate.

11. The semiconductor device of claim 10 , wherein the seed layer is recessed away from a sidewall of the conductive connector.

12. The semiconductor device of claim 8 , further comprising a solder paste located between the conductive connector and the redistribution substrate.

13. The semiconductor device of claim 8 , wherein the conductive connector is a copper cube.

14. The semiconductor device of claim 8 , wherein the conductive connector is a copper pillar, wherein the shield extends through an opening in the encapsulant, the opening having a width to depth ratio of between about 4.5 and about 0.3.

15. A semiconductor device comprising:

a plurality of modules on a substrate, the plurality of modules comprising a first system on chip module, a passive module, a second system on chip module, and an integrated passive device;

a conductive connector on the substrate;

an encapsulant encapsulating the conductive connector and the plurality of modules;

an opening through the encapsulant to expose at least a portion of the conductive connector, wherein the opening has a constant width and multiple sidewalls with the same height, each of the sidewalls being straight and extending to an uppermost surface of the encapsulant, the sidewalls having a length less than a thickness of the encapsulant;

a shield layer over the encapsulant and in the opening to make electrical connection with the conductive connector, the shield layer fully covering sidewalls of the substrate; and

external connectors located on a side of the substrate opposite the conductive connectors to a surface of the shield layer facing away from the encapsulant and over the encapsulant is between about 50 μm and about 2,000 μm.

16. The semiconductor device of claim 15 , further comprising a seed layer, wherein the seed layer is recessed away from a sidewall of the conductive connector.

17. The semiconductor device of claim 15 , wherein the conductive connector is a conductive pillar.

18. The semiconductor device of claim 15 , wherein the conductive connector is connected to a redistribution substrate through a seed layer.

19. The semiconductor device of claim 18 , wherein the conductive connector is connected to the redistribution substrate through a solder paste.

20. The semiconductor device of claim 15 , wherein a first one of the plurality of modules is a system on chip module, wherein the opening having a width to depth ratio of between about 4.5 and about 0.3.