Display substrate and preparation method thereof, and display apparatus

1. A display substrate, comprising a microcavity structure layer and a light emitting structure layer that are stacked, a reflective electrode being disposed in the microcavity structure layer, a groove being disposed on a surface of the microcavity structure layer, the light emitting structure layer comprising a first electrode disposed in the groove, and the first electrode being connected to the reflective electrode;

wherein the display substrate further comprises: a driving circuit layer disposed on a silicon-based substrate, the driving circuit layer comprising a driving transistor, and the driving circuit layer being provided with a first via exposing a drain electrode of the driving transistor;

wherein the microcavity structure layer comprises:

a connection electrode disposed on the driving circuit layer, the connection electrode being connected to the drain electrode of the driving transistor through the first via;

a first insulating layer covering the connection electrode, the first insulating layer being provided with a second via exposing the connection electrode;

a reflective electrode disposed on the first insulating layer, the reflective electrode being connected to the connection electrode through the second via; and

a second insulating layer covering the reflective electrode, the second insulating layer being provided, on a surface away from the silicon-based substrate, with the groove in which a third via exposing the reflective electrode is provided, wherein the groove is communicated with the reflective electrode through the third via hole and separated from the drain electrode by the third via hole, the third insulating layer, the reflective electrode, the first insulating layer, and the connection electrode, the first electrode is disposed in the groove of the second insulating layer to control a height difference between the first electrode and the second insulating layer, and a width of the groove is greater than a width of the first electrode, and a height of the groove is less than a height of the first electrode.

2. The display substrate according to claim 1 , wherein the first electrode is disposed in the groove of the second insulating layer and is connected to the reflective electrode through the third via.

3. The display substrate according to claim 1 , wherein the light emitting structure layer further comprises: a light emitting layer disposed on the first electrode and emitting white light, and a second electrode disposed on the light emitting layer.

4. The display substrate according to claim 1 , wherein a depth of the groove is 200 angstroms to 600 angstroms.

5. The display substrate according to claim 1 , wherein an orthographic projection of the groove on the silicon-based substrate includes an orthographic projection of the first electrode on the silicon-based substrate.

6. The display substrate according to claim 1 , wherein a height difference between a surface of the second insulating layer between first electrodes, and a surface of the first electrode is less than 400 angstroms.

7. The display substrate according to claim 6 , wherein the surface of the second insulating layer between the first electrodes is flush with the surface of the first electrode.

8. A display apparatus, comprising the display substrate according to claim 1 .

9. A method for preparing a display substrate, comprising:

forming a microcavity structure layer, a reflective electrode being formed in the microcavity structure layer, and a groove being formed on a surface of the microcavity structure layer; and

forming a light emitting structure layer on the microcavity structure layer, a first electrode of the light emitting structure layer being formed in the groove and being connected to the reflective electrode;

wherein before the forming a microcavity structure layer, the preparation method further comprises:

forming a driving circuit layer on a silicon-based substrate, the driving circuit layer comprising a driving transistor, and a first via exposing a drain electrode of the driving transistor being formed on the driving circuit layer;

wherein the forming a microcavity structure layer comprises:

forming a connection electrode on the driving circuit layer, the connection electrode being connected to the drain electrode of the driving transistor through the first via; forming a first insulating layer covering the connection electrode, a second via exposing the connection electrode being formed on the first insulating layer;

forming a reflective electrode on the first insulating layer, the reflective electrode being connected to the connection electrode through the second via; and

forming a second insulating layer covering the reflective electrode, the groove being formed on a surface of the second insulating layer away from the silicon-based substrate, and a third via exposing the reflective electrode being formed in the groove, wherein the groove is communicated with the reflective electrode through the third via and separated from the drain electrode by the third via hole, the third insulating layer, the reflective electrode, the first insulating layer, and the connection electrode, the first electrode is disposed in the groove of the second insulating layer to control a height difference between the first electrode and the second insulating layer, a width of the groove is greater than a width of the first electrode, and a height of the groove is less than a height of the first electrode.

10. The preparation method according to claim 9 , wherein the forming a light emitting structure layer on the microcavity structure layer comprises:

forming the first electrode in the groove of the second insulating layer, the first electrode being connected to the reflective electrode through the third via;

forming a light emitting layer emitting white light on the first electrode; and

forming a second electrode on the light emitting layer.

11. The preparation method according to claim 9 , wherein a depth of the groove is 200 angstroms to 600 angstroms.

12. The preparation method according to claim 9 , wherein an orthographic projection of the groove on the silicon-based substrate includes an orthographic projection of the first electrode on the silicon-based substrate.

13. The preparation method according to claim 9 , wherein a height difference between a surface of the second insulating layer between first electrodes, and a surface of the first electrode is less than 400 angstroms.

14. The preparation method according to claim 13 , wherein the surface of the second insulating layer between the first electrodes is flush with the surface of the first electrode.