IP Library › Granted Patent US 11,482,982
Granted Patent B2
US 11,482,982 · App. 16/901,032 · Granted Oct 25, 2022

Acoustic wave device

Inventor: Kazunori Inoue (Nagaokakyo, JP)
Assignee: MURATA MANUFACTURING CO., LTD.
H03H9/02897H03H3/10H03H9/02834H03H9/059H03H9/1092H03H9/145H03H9/25
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Quick Facts
Patent No.
US 11,482,982
App. No.
16/901,032
Granted
Oct 25, 2022
Kind
B2
Abstract

A through-hole that extends from an upper surface of a cover opposite a support to a lower surface of the support facing a substrate is provided in the support and the cover. The through-hole overlaps a portion of a wiring line in a plan view. An acoustic wave device further includes an electrode film that is electrically connected to the wiring line in the through-hole, and a protective layer that includes an insulating material and that covers a portion of the electrode film. The protective layer is connected to the cover and the support in the through-hole. Differences in thermal expansion coefficients between the protective layer and the cover and between the protective layer and the support are smaller than a difference in thermal expansion coefficients between the protective layer and the electrode film.

Claims (28)

1. An acoustic wave device comprising:

a substrate;

a functional element that is provided on the substrate;

a wiring line that is provided on the substrate and that is electrically connected to the functional element;

a support that is made of an insulating material and that is provided around the functional element on the substrate; and

a cover that is made of an insulating material, that covers the functional element, and that faces the substrate with the support interposed between the substrate and the cover; wherein

a through-hole that extends from a first surface of the cover opposite the support to a second surface of the support that faces the substrate is provided in the support and the cover;

the through-hole overlaps a portion of the wiring line in a plan view;

the acoustic wave device further includes:

an electrode film that is provided on the first surface and in the through-hole and that is electrically connected to the wiring line in the through-hole; and

a protective layer that is made of an insulating material and that covers at least a portion of the first surface and a portion of the electrode film;

the protective layer is connected to at least of the cover and the support in the through-hole; and

a difference in thermal expansion coefficients between the protective layer and the at least one of the cover and the support is smaller than a difference in thermal expansion coefficients between the protective layer and the electrode film.

2. The acoustic wave device according to claim 1 , wherein the protective layer is connected to the cover and the support in the through-hole.

3. The acoustic wave device according to claim 2 , wherein an inner wall surface around the through-hole includes a third surface of the cover that faces the substrate and a fourth surface of the support that is adjacent to the third surface; and

the protective layer is connected to the third surface and the fourth surface.

4. The acoustic wave device according to claim 1 , wherein the protective layer is connected to the substrate in the through-hole.

5. The acoustic wave device according to claim 1 , wherein the functional element includes at least one interdigital transducer electrode.

6. The acoustic wave device according to claim 5 , wherein the at least one interdigital transducer electrode defines a surface acoustic wave resonator.

7. The acoustic wave device according to claim 1 , wherein a metallic layer is provided between the wiring line and the functional element.

8. The acoustic wave device according to claim 1 , wherein the insulating material of the support is a synthetic resin or a photosensitive resin.

9. The acoustic wave device according to claim 1 , wherein the insulating material of the cover is an epoxy resin or polyimide.

10. The acoustic wave device according to claim 1 , wherein a hollow space is defined by the substrate, the support, and the cover, and the functional element is located in the hollow space.

11. The acoustic wave device according to claim 1 , wherein the support and the cover are integrally provided.

12. The acoustic wave device according to claim 1 , wherein the electrode film is a multilayer film that includes a seed layer and a plating layer provided on the seed layer.

13. The acoustic wave device according to claim 1 , wherein the protective layer covers an entirety or substantially an entirety of the first surface.

14. The acoustic wave device according to claim 1 , wherein the difference in thermal expansion coefficients between the protective layer and the at least one of the cover and the support is between about 0 and about 10×10 −6 /K; and

the difference in thermal expansion coefficients between the protective layer and the electrode film is between about 30×10 −6 /K and about 50×10 −6 /K.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 15, 2020
From: INOUE, KAZUNORI
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 052935/0157 →
Priority Claims (1)
JP JP2017-251035 · Dec 27, 2017 · national
Continuity (2)
Continuation PCTJP2018044599 · Dec 4, 2018
Related Publication 20200313644A1 · Oct 1, 2020