In-situ growth of quantum dots and nano-crystals from one, two, or three dimensional material
Techniques for growing, at least one of: (a) quantum dots and (b) nano-crystals, on a surface of a material are provided. One method comprises placing a precursor on the surface; adding an antisolvent to the precursor; and growing at least one of the quantum dots and the nanocrystals on the surface.
1. A method of growing, at least one of: (a) quantum dots and (b) nano-crystals, on a surface of a material, the method comprising:
placing a precursor on the surface;
adding an antisolvent to the precursor; and
growing, from the surface of the material, the at least one of quantum dots and nano-crystals.
2. The method of claim 1 , further comprising activating the surface of the material to create additional defect sites on the surface of the material.
3. The method of claim 2 , wherein activating the surface comprises performing dry or wet etching of the surface.
4. The method of claim 1 , further comprising removing remaining precursor.
5. The method of claim 1 , wherein the at least one of: (a) quantum dots and (b) nano-crystals are separated from the surface of the material by a minimum distance.
6. The method of claim 5 , wherein the minimum distance is less than 0.5 nm.
7. The method of claim 1 , wherein the at least one of: (a) quantum dots and (b) nano-crystals consists of perovskite quantum dots; and
wherein the precursor is a perovskite precursor.
8. The method of claim 1 , wherein the material comprises graphene, carbon nanotubes, or at least one doped semiconductor.
9. The method of claim 1 , wherein carrier mobility of the material is higher than carrier mobility of the at least one of: (a) quantum dots and (b) nano-crystals.
10. The method of claim 1 , wherein the antisolvent comprises at least one of toluene, diethyl ether, chlorobenzene, and chloroform.
11. The method of claim 1 , wherein the at least one quantum dot and/or nano-crystal is grown from a defect site on the surface of the material.