Semiconductor devices and methods of manufacturing

1. A method comprising:

depositing a first dielectric layer over a carrier substrate;

adhering a first device to the first dielectric layer;

encapsulating the first device in a first molding compound;

forming an interconnect structure over the first device, wherein a first interface between the interconnect structure and the first device has a flat surface;

placing a second device over the interconnect structure, the interconnect structure electrically coupling the second device to the first device, wherein a second interface between the interconnect structure and the second device has a concave shape, wherein the concave shape has a first width and the flat surface has a second width and a ratio of the first width to the second width is between 3 and 7, inclusive; and

encapsulating the second device in a second molding compound after the placing the second device over the interconnect structure.

2. The method of claim 1 , wherein a coefficient of thermal expansion of the second molding compound is different from a coefficient of thermal expansion of the first molding compound.

3. The method of claim 2 , wherein:

the coefficient of thermal expansion of the first molding compound is a first coefficient of thermal expansion below a glass transition temperature of the first molding compound and the coefficient of thermal expansion of the second molding compound is a first coefficient of thermal expansion of the second molding compound below a glass transition temperature of the second molding compound; and

a ratio of the first coefficient of thermal expansion of the second molding compound to the first coefficient of thermal expansion of the first molding compound is between 0.8 and 0.99, inclusive.

4. The method of claim 3 , wherein:

the coefficient of thermal expansion of the first molding compound is a second coefficient of thermal expansion above the glass transition temperature of the first molding compound and the coefficient of thermal expansion of the second molding compound is a second coefficient of thermal expansion above the glass transition temperature of the second molding compound; and

a ratio of the second coefficient of thermal expansion of the second molding compound to the second coefficient of thermal expansion of the first molding compound is between 0.1 and 0.7, inclusive.

5. The method of claim 1 , further comprising:

placing an integrated passive device over the carrier substrate, the integrated passive device being attached to a silicon dam; and

leveling the integrated passive device and the first device.

6. The method of claim 1 , wherein the placing the second device over the interconnect structure comprises attaching a contact area of the second device to a surface of a metallization pattern of the interconnect structure, the second shape being concave.

7. The method of claim 1 , wherein the first molding compound has a first thickness, and the second molding compound has a second thickness, the second thickness being greater than the first thickness.

8. The method of claim 1 , wherein prior to adhering the first device to the first dielectric layer, forming through vias over the first dielectric layer.

9. A method comprising:

depositing a first dielectric layer over a system on chip device;

forming a first opening through the first dielectric layer, a first die connector of the system on chip device being exposed through the first opening;

depositing a first metallization pattern over the first dielectric layer and in the first opening to the first die connector, a first flat contact area interface being formed between the first metallization pattern and the first die connector;

depositing a second dielectric layer over the first metallization pattern;

forming a second opening through the second dielectric layer;

forming a second metallization pattern over the second dielectric layer and in the second opening;

forming a third opening, a through via being exposed through the third opening, wherein the depositing the first metallization pattern over the first dielectric layer further comprises depositing the first metallization pattern in the third opening to the through via;

placing an integrated circuit device over the second metallization pattern; and

attaching a contact area of the integrated circuit device to a surface of the second metallization pattern, the surface of the second metallization pattern being concave.

10. The method of claim 9 , further comprising:

encapsulating the system on chip device in a first molding compound prior to the depositing the first dielectric layer; and

encapsulating the integrated circuit device in a second molding compound after the placing the integrated circuit device over the second metallization pattern.

11. The method of claim 10 , wherein a ratio between a second height of the second molding compound and a first height of the first molding compound is at most 6.

12. The method of claim 10 , further comprising forming the through via prior to the depositing the first dielectric layer over the system on chip device, wherein after the forming the through via the system on chip device is located adjacent to the through via.

13. The method of claim 10 , wherein the first molding compound has a first coefficient of thermal expansion, and the second molding compound has a second coefficient of thermal expansion, the first coefficient of thermal expansion being different from the second coefficient of thermal expansion.

14. The method of claim 9 , further comprising:

forming a first external connector to the first through interconnect via opposite the first metallization pattern; and

forming a second external connector adjacent to the first external connector, a pitch between the first external connector and the second external connector being between 80 μm and 250 μm, inclusive.

15. The method of claim 9 , wherein the surface of the second metallization pattern has a first width and the first flat contact area interface has a second width, a ratio of the first width to the second width is between 3 and 7, inclusive.

16. A method of manufacturing a semiconductor device, the method comprising:

a system on chip device;

an integrated circuit device; and

a redistribution structure physically separating and electrically coupling the integrated circuit device and the system on chip device, wherein the redistribution structure comprises a first metal trace having a concave shape interface with the integrated circuit device and a second metal trace having a flat interface with the system on chip device, wherein the concave shape interface has a first width and the flat interface has a second width, the second width being smaller than the first width.

17. The method of claim 16 , wherein a ratio of the first width to the second width is between 3 and 7, inclusive.

18. The method of claim 16 , further comprising a first through interconnect via, wherein the redistribution structure further comprises a third metal trace having a second flat interface with the first through interconnect via.

19. The method of claim 18 , further comprising an integrated passive device adjacent to the system on chip device, the integrated passive device electrically connected to the redistribution structure and in physical contact with a dam on an opposite side of the integrated passive device from the redistribution structure.

20. The method of claim 16 , further comprising:

encapsulating the system on chip device in a first molding compound, the first molding compound having a first coefficient of thermal expansion; and

encapsulating the integrated circuit device in a second molding compound, the second molding compound having a second coefficient of thermal expansion, wherein the first coefficient of thermal expansion is greater than the second coefficient of thermal expansion.