Antenna device and temperature detection method
An antenna device according to an exemplary embodiment includes a first metal layer, a first dielectric layer, a second metal layer, and a second dielectric layer. The first dielectric layer has a thermal conductivity and heat resistance that are higher than those of an FR-4 resin. The antenna device includes a first metal terminal and a second metal terminal, and a thermosensor. A pair of an input terminal and an output terminal of the thermosensor are electrically connected to the first metal terminal and the second metal terminal, respectively, and the second metal layer includes a first segment and a second segment. The first metal terminal is disposed above the first segment, and the second metal terminal is disposed above the second segment.
1. An antenna device comprising:
a first metal layer;
a first dielectric layer disposed on the first metal layer, the first dielectric layer having a thermal conductivity and heat resistance that are higher than those of an FR-4 resin;
a second metal layer disposed on the first dielectric layer, the second metal layer including a first segment and a second segment separated from each other;
a second dielectric layer disposed on the second metal layer;
a first metal terminal and a second metal terminal separately disposed on the second dielectric layer, the first metal terminal and the second metal terminal being disposed above the first segment and the second segment, respectively; and
a thermosensor disposed on the second dielectric layer, the thermosensor having a pair of an input terminal and an output terminal electrically connected to the first and second metal terminals respectively.
2. The antenna device according to claim 1 , wherein the first dielectric layer comprises aluminum nitride.
3. The antenna device according to claim 1 , wherein the first dielectric layer comprises:
a first sublayer disposed on the first metal layer;
a second sublayer disposed on the first sublayer; and
a third sublayer disposed on the second sublayer; wherein
the first sublayer and the third sublayer each comprise a SiO 2 -containing glass and the second sublayer comprises silicon.
4. The antenna device according to claim 3 , wherein the first sublayer and the third sublayer each comprise quartz.
5. The antenna device according to claim 1 , wherein the thermosensor comprises a passive thermosensor operable by surface acoustic waves.
6. The antenna device according to claim 4 , wherein the thermosensor comprises a passive thermosensor operable by surface acoustic waves.
7. The antenna device according to claim 1 , wherein the first metal terminal and the second metal terminal are disposed on a central region of the second dielectric layer.
8. The antenna device according to claim 4 , wherein the first metal terminal and the second metal terminal are disposed on a central region of the second dielectric layer.
9. The antenna device according to claim 1 , wherein the first metal terminal and the second metal terminal are disposed on an edge region of the second dielectric layer.
10. The antenna device according to claim 4 , wherein the first metal terminal and the second metal terminal are disposed on an edge region of the second dielectric layer.
11. A method of detecting a temperature of a wafer provided with the antenna device according to claim 1 , the method comprising:
disposing the wafer on an electrostatic chuck;
receiving a first signal from an external antenna at the thermosensor through the antenna device, the first signal oscillating the thermosensor to detect a temperature;
outputting a second signal from the thermosensor in response to the first signal, the second signal indicating the temperature of the wafer detected by the thermosensor; and
transmitting the second signal from the antenna device to the external antenna.
12. The method according to claim 11 , wherein the thermosensor comprises a passive thermosensor operable by surface acoustic waves.