IP Library Granted Patent US 10,995,102
Granted Patent B2
US 10,995,102 · App. 16/903,322 · Granted May 4, 2021

Crystals for detecting neutrons, gamma rays, and X rays and preparation methods thereof

Inventors: Yu Wang (Meishan, CN); Weiming Guan (Meishan, CN); Min Li (Meishan, CN)
Assignee: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
C07F5/003C30B15/00C30B15/002C30B29/22G01T1/2023G01T3/06
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,995,102
App. No.
16/903,322
Granted
May 4, 2021
Kind
B2
Abstract

The present disclosure discloses a method for growing a crystal for detecting neutrons, gamma rays, and/or x rays. The method may include weighting reactants based on a molar ratio of the reactants according to a reaction equation (1-x-z)X 2 O 3 +SiO 2 +2xCeO 2 +zZ 2 O 3 →X 2(1-x-z) Ce 2x Z 2z SiO 5 +x/2O 2 ↑ or (1-x-y-z)X 2 O 3 +yY 2 O 3 +SiO 2 +2xCeO 2 +zZ 2 O 3 →X 2(1-x-y-z) Y 2y Ce 2x Z 2z SiO 5 +x/2O 2 ↑; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device after an assembly processing operation is performed on at least one component of the crystal growth device; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to grow the crystal based on the Czochralski technique.

Claims (89)

1. A crystal, a formula of the crystal being

X

2

(

1

-

x

-

y

-

z

)

M

2

y

Y

2

x

Z

2

z

SiO

(

5

-

n

2

)

N

n

or

X

2

(

1

-

x

-

z

)

Y

2

x

Z

2

z

SiO

(

5

-

n

2

)

N

n

,

wherein

x=0.0001%˜6%, y=0%˜100%, z=0.0001˜6%,

a value of n is 0˜5,

X consists of at least one of an element or one or more compounds containing Ce, the element including La, Y, Gd, Pr, Ce, Nd, Pm, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb, Mn, Mg, Ca, Al, Fe, Sr, or Ba, and the one or more compounds containing Ce including CeO 2 , Ce 2 O 3 , Ce(CO 3 ) 2 , CeCl 3 , CeF 3 , CeS, CeBr 3 , CeRu 2 , CeCo 2 , CeRh 3 , CeN, CePd 3 , Cel 3 , CeF 4 , or CeCl 4 ,

Y consists of at least one of Cl, F, Br, N, P, or S,

Z consists of at least one of Li, B, Gd, or Tb,

M consists of at least one of Sc, Y, Gd, or Lu,

N consists of at least one of Cl, F, Br, or S, and

SiO S 2− includes Cl—, F—, Br − , or S − .

2. The crystal of claim 1 , wherein a value of x is 0.1%˜0.6%.

3. The crystal of claim 1 , wherein a value of y is 5%˜30%.

4. The crystal of claim 1 , wherein a value of z is 0.1˜0.6%.

5. The crystal of claim 1 , wherein the crystal thereof is utilized to capture neutrons to emit radiation or collide with the neutrons to cause a nucleus of the crystal to move in an opposite direction.

Assignments (2)
CHANGE OF NAME Recorded May 13, 2026
From: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
To: BOYA ADVANCED MATERIALS CO., LTD.
Reel/Frame 075565/0780 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 19, 2020
From: WANG, YU; GUAN, WEIMING; LI, MIN
To: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
Reel/Frame 052984/0240 →
Continuity (2)
Continuation PCTCN2019101680 · Aug 21, 2019
Related Publication 20210053993A1 · Feb 25, 2021
Cited By (1)
US 12,735,804