Mapping and evaluating GaN wafers for vertical device applications
A method for mapping and analyzing a GaN substrate to identify areas of the substrate suitable for fabrication of electronic devices thereon. Raman spectroscopy is performed over the surface of a GaN substrate to produce maps of the E 2 and A 1 peaks at a plurality of areas on the substrate surface, the E 2 and A 1 peaks being associated with known concentrations of defects and charge carriers, so that areas of the GaN substrate having relatively high resistivity or conductivity which make those areas suitable or unsuitable for fabrication of electronic devices can be identified. The devices can then be fabricated only on suitable areas of the substrate, or the size of the devices can be tailored to maximize the yield of devices fabricated thereon. Substrates not meeting a threshold level of defect and/or charge carrier concentration can be discarded without fabrication of poor-quality devices thereon.
1. A method for identifying a density of defects in a GaN sample, the method including the steps of:
performing Raman spectroscopy at a predetermined plurality of locations on a surface of the GaN sample;
receiving, at a processor programmed with appropriate software, data of an E 2 peak wavenumber associated with an E 2 phonon peak of the GaN sample at each of the plurality of locations on the GaN sample surface, the E 2 peak wavenumber at each location being indicative of a determinable density of defects within the GaN sample at that location; and
using the processor, generating a map of the GaN sample surface, the map providing an indicia of the E 2 peak wavenumber at each of the plurality of locations on the GaN sample surface;
wherein the map provides an indicia of the density of defects at each of the plurality of locations in the GaN sample.
2. A method for identifying a density of charge carriers in a GaN sample, the method including the steps of:
performing Raman spectroscopy at a predetermined plurality of locations on a surface of the GaN sample;
receiving, at a processor programmed with appropriate software, data of an A 1 (LO) peak wavenumber associated with an A 1 (LO) phonon peak of the GaN sample at each of the plurality of locations on the GaN sample surface, the A 1 (LO) peak wavenumber at each location being indicative of a determinable density of charge carriers within the GaN sample at that location; and
using the processor, generating a map of the GaN sample surface, the map providing an indicia of the A 1 (LO) peak wavenumber at each of the plurality of locations on the GaN sample surface;
wherein the map provides an indicia of the density of charge carriers at each of the plurality of locations in the GaN sample.
3. A method for identifying a presence of grain boundaries in a GaN sample, the method including the steps of:
performing Raman spectroscopy at on a predetermined plurality of locations on a surface of the GaN sample;
receiving, at a processor programmed with appropriate software, data of an A 1 (TO) peak wavenumber associated with an A 1 (TO) phonon peak of the GaN sample at each of the plurality of locations on the GaN sample surface, the A 1 (TO) peak wavenumber at each location being indicative of a presence of at least one grain boundary within the GaN sample at that location; and
using the processor, generating a map of the GaN sample surface, the map providing an indicia of the A 1 (TO) peak wavenumber at each of the plurality of locations on the GaN sample surface;
wherein the map provides an indicia of a location of the at least one grain boundary in the GaN sample.
4. A method for identifying at least one area on a surface of a GaN sample suitable for electronic device fabrication, the method including the steps of:
performing Raman spectroscopy at a predetermined plurality of locations on the surface of the GaN sample;
for each of the plurality of locations on the GaN sample surface, receiving, at a processor programmed with appropriate software, data of at least one of an E 2 peak wavenumber associated with an E 2 phonon peak of the GaN sample, an A 1 (LO) peak wavenumber associated with an A 1 (LO) phonon peak of the GaN sample, and an A 1 (TO) peak wavenumber associated with an A 1 (TO) phonon peak of the GaN sample,
the E 2 peak wavenumber at each location being indicative of a determinable density of defects within the GaN sample at that location,
the A 1 (LO) peak wavenumber at each location being indicative of a determinable density of charge carriers within the GaN sample at that location, and
the A 1 (TO) peak wavenumber at each location being indicative of a presence of at least one grain boundary within the GaN sample at that location;
using the processor, generating at least one map of the GaN sample surface, the map providing an indicia of the E 2 , A 1 (LO), or A 1 (TO) peak wavenumber at each of the plurality of locations on the GaN substrate surface; and
using the generated map, identifying areas of the GaN sample surface satisfying at least one predetermined defect density, charge carrier concentration, or grain boundary density criterion for fabrication of a predetermined electronic device on the GaN substrate.
5. The method according to claim 4 , further including the step of determining a size of the predetermined electronic device that can be fabricated on the area on the GaN substrate surface satisfying the at least one predetermined defect density, charge carrier concentration, or grain boundary density criterion.
6. The method according to claim 4 , further including the step of determining a number of the predetermined electronic devices that can be fabricated on the area on the GaN substrate surface satisfying the at least one predetermined defect density, charge carrier concentration, or grain boundary density criterion.
7. The method according to claim 4 , further including the step of determining a placement of at least one of the predetermined electronic device that can be fabricated on the area on the GaN substrate surface satisfying the at least one predetermined defect density, charge carrier concentration, or grain boundary density criterion.
8. A method for identifying a conductivity of a GaN sample, the method including the steps of:
performing photoluminescence (PL) spectroscopy at a predetermined plurality of locations on a surface of the GaN sample;
receiving, at a processor programmed with appropriate software, data of a wavenumber at which the photoluminescence spectroscopy exhibits a peak intensity at each of the plurality of locations on the GaN surface, the wavenumber having the peak intensity being indicative of a determinable conductivity of the GaN sample at that location; and
using the processor, generating a map of the GaN sample surface, the map providing an indicia of the wavenumber having the peak intensity at each of the plurality of locations on the GaN sample surface;
wherein the map provides an indicia of the conductivity at each of the plurality of locations in the GaN sample.
9. A method for identifying at least one area on a surface of a GaN sample suitable for electronic device fabrication, the method including the steps of:
performing photoluminescence (PL) spectroscopy at a predetermined plurality of locations on a surface of the GaN sample;
receiving, at a processor programmed with appropriate software, data of a wavenumber at which the photoluminescence spectroscopy exhibits a peak intensity at each of the plurality of locations on the GaN surface, the wavenumber having the peak intensity being indicative of a determinable conductivity of the GaN sample at that location; and
using the processor, generating a map of the GaN sample surface, the map providing an indicia of the wavenumber having the peak intensity at each of the plurality of locations on the GaN sample surface;
wherein the map provides an indicia of the conductivity at each of the plurality of locations in the GaN sample; and
using the generated map, identifying areas of the GaN sample surface satisfying a predetermined conductivity criterion for fabrication of a predetermined electronic device on the GaN substrate.
10. The method according to claim 9 , further including the step of determining a size of the predetermined electronic device that can be fabricated on the area on the GaN substrate surface satisfying the predetermined conductivity criterion.
11. The method according to claim 9 , further including the step of determining a number of the predetermined electronic devices that can be fabricated on the area on the GaN substrate surface satisfying the predetermined conductivity criterion.
12. The method according to claim 9 , further including the step of determining a placement of at least one of the predetermined electronic device that can be fabricated on the area on the GaN substrate surface satisfying the predetermined conductivity criterion.