IP Library Granted Patent US 11,502,138
Granted Patent B2
US 11,502,138 · App. 16/907,743 · Granted Nov 15, 2022

Electronic substrate, manufacturing method thereof, and display panel

Inventors: Guoqiang Tang (Beijing, CN); Yang Wang (Beijing, CN); Yuedi He (Beijing, CN)
Assignees: Chengdu BOE Optoelectronics Technology Co., Ltd.; Beijing BOE Technology Development Co., Ltd.
H01L27/3227G06F3/044G06F3/0412G06F3/0443G06F3/0446G06V40/12H01L27/323H01L27/3218H01L27/3246H01L27/3272H01L51/56G06F2203/04103G06F2203/04111G06F2203/04112H01L2227/323
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Quick Facts
Patent No.
US 11,502,138
App. No.
16/907,743
Granted
Nov 15, 2022
Kind
B2
Abstract

An electronic substrate, a manufacturing method thereof and a display panel are provided. The electronic substrate includes a base substrate as well as a photosensitive unit and a touch structure which are provided on the base substrate. The photosensitive unit includes a first electrode layer, and the touch structure includes a first touch electrode layer. The first electrode layer and the first touch electrode layer are in a same first conductive layer and made of a same material, and the first electrode layer and the first touch electrode layer insulated from each other.

Claims (57)

1. An electronic substrate, comprising:

a base substrate, and

a photosensitive unit and a touch structure which are provided on the base substrate,

wherein the photosensitive unit comprises a first electrode layer, and the touch structure comprises a first touch electrode layer;

the first electrode layer and the first touch electrode layer are in a same first conductive layer and made of a same material, and the first electrode layer and the first touch electrode layer are insulated from each other;

the touch structure further comprises a second touch electrode layer in a different layer from the first conductive layer; and

the photosensitive unit further comprises a second electrode layer, the second electrode layer is in a same layer and made of a same material as the second touch electrode layer, and the second electrode layer is insulated from the second touch electrode layer;

the photosensitive unit comprises a photosensitive thin film transistor and a first light shielding layer at a side of the photosensitive thin film transistor away from the base substrate, and the first light shielding layer is provided with a first opening;

the photosensitive thin film transistor comprises a gate electrode, an active layer, a source electrode and a drain electrode, the gate electrode of the photosensitive thin film transistor is at a side of the active layer close to the base substrate, and the first opening at least partially overlaps with the active layer of the photosensitive thin film transistor in a direction perpendicular to the base substrate; and

the first light shielding layer and the gate electrode of the photosensitive thin film transistor serve as the first electrode layer and second electrode layer respectively.

2. The electronic substrate according to claim 1 , wherein the first touch electrode layer comprises a first touch electrode extended in a first direction and a plurality of second touch electrode portions arranged in a second direction;

the second touch electrode layer comprises a plurality of second connecting portions, and the plurality of second connecting portions and the plurality of second touch electrode portions are alternately electrically connected to form a second touch electrode extended in the second direction; and

the second direction intersects with the first direction.

3. The electronic substrate according to claim 1 , wherein the photosensitive thin film transistor further comprises an etch stopping layer at a side of the active layer away from the base substrate.

4. The electronic substrate according to claim 1 , wherein the photosensitive unit further comprises a first capacitor, and the first capacitor comprises a first electrode and a second electrode;

the first electrode of the first capacitor is in a same layer and made of a same material as the gate electrode of the photosensitive thin film transistor, and the first electrode of the first capacitor is insulated from the gate electrode of the photosensitive thin film transistor; and

the second electrode of the first capacitor is in a same layer as and is electrically connected with the drain electrode of the photosensitive thin film transistor.

5. The electronic substrate according to claim 1 , further comprising a light-emitting element on the base substrate,

wherein the photosensitive unit and the touch structure are both at a side of the light-emitting element away from the base substrate.

6. The electronic substrate according to claim 5 , wherein the first touch electrode layer comprises a metal material, and

the first touch electrode layer further comprises an opening to expose at least a part of the light-emitting element.

7. The electronic substrate according to claim 1 , wherein the first touch electrode layer comprises a plurality of metal grids formed by a plurality of metal wires; and

an orthographic projection of the first electrode layer at the base substrate is located within an orthographic projection of a mesh hole of one of the plurality of metal grids at the base substrate.

8. A display panel, comprising the electronic substrate according to claim 1 .

9. The display panel according to claim 8 , wherein the display panel further comprises a plurality of sub-pixels on the base substrate and arranged in an array in a first direction and a second direction, and the first direction is different from the second direction; and

the photosensitive unit and the touch structure are both at a side of each of the plurality of sub-pixels away from the base substrate.

10. The display panel according to claim 9 , wherein the display panel further comprises a pixel defining layer,

each of the plurality of sub-pixels comprises a light-emitting element, and the pixel defining layer comprises a plurality of openings for respectively exposing a plurality of light-emitting elements to define a plurality of pixel opening areas of the plurality of sub-pixels; and

an orthographic projection of all conductive patterns in the first conductive layer at the base substrate is located outside orthographic projections of the plurality of pixel opening areas of the plurality of sub-pixels at the base substrate.

11. The display panel according to claim 10 , wherein the plurality of sub-pixels are divided into a plurality of repeated units, and each of the plurality of repeated units comprises one red sub-pixel, one blue sub-pixel and two paired green sub-pixels;

the pixel opening areas of the two paired green sub-pixels are arranged in parallel in the second direction; and

an orthographic projection of the photosensitive unit at the base substrate is located between an orthographic projection of the opening area of the red sub-pixel at the base substrate and orthographic projections of the opening areas of the two paired green sub-pixels at the base substrate, and the orthographic projection of the opening area of the red sub-pixel is adjacent from the orthographic projections of the opening areas of the two paired green sub-pixels in the first direction.

12. An electronic substrate, comprising:

a base substrate, and

a photosensitive unit and a touch structure which are provided on the base substrate,

wherein the photosensitive unit comprises a first electrode layer, and the touch structure comprises a first touch electrode layer;

the first electrode layer and the first touch electrode layer are in a same first conductive layer and made of a same material, and the first electrode layer and the first touch electrode layer are insulated from each other;

the touch structure further comprises a second touch electrode layer in a different layer from the first conductive layer; and

the photosensitive unit further comprises a second electrode layer, the second electrode layer is in a same layer and made of a same material as the second touch electrode layer, and the second electrode layer is insulated from the second touch electrode layer;

the photosensitive unit comprises a photosensitive element and a switching transistor which is connected with the photosensitive element, and the photosensitive element is at a side of the switching transistor away from the base substrate;

the photosensitive element comprises a first electrode, a second electrode and a photosensitive layer located between the first electrode and the second electrode,

the switching transistor comprises a gate electrode, an active layer, a source electrode and a drain electrode, and the drain electrode of the switching transistor is electrically connected with the first electrode of the photosensitive element; and

the first electrode of the photosensitive element and the gate electrode of the switching transistor serve as the first electrode layer and second electrode layer respectively.

13. The electronic substrate according to claim 12 , further comprising a first light shielding layer,

wherein the first light shielding layer and the gate electrode of the switching transistor are at two opposite sides of the active layer of the switching transistor in a direction perpendicular to the base substrate, and the first light shielding layer overlaps with the active layer of the switching transistor in the direction perpendicular to the base substrate.

14. A manufacturing method of an electronic substrate, comprising:

forming a photosensitive unit and a touch structure at a base substrate,

wherein forming the photosensitive unit comprises forming a first electrode layer, and

forming the touch structure comprises forming a first touch electrode layer,

wherein the first electrode layer and the first touch electrode layer are formed in a same patterning process and are insulated from each other;

forming the touch structure further comprises forming a second touch electrode layer,

forming the photosensitive unit further comprises forming a second electrode layer, and the second electrode layer and the second touch electrode layer are formed in a same patterning process and are insulated from each other; and

the photosensitive unit comprises a photosensitive thin film transistor and a first light shielding layer at a side of the photosensitive thin film transistor away from the base substrate, and the first light shielding layer is provided with a first opening;

the photosensitive thin film transistor comprises a gate electrode, an active layer, a source electrode and a drain electrode, the gate electrode of the photosensitive thin film transistor is at a side of the active layer close to the base substrate, and the first opening at least partially overlaps with the active layer of the photosensitive thin film transistor in a direction perpendicular to the base substrate; and

the first light shielding layer and the gate electrode of the photosensitive thin film transistor serve as the first electrode layer and second electrode layer respectively.

15. The manufacturing method according to claim 14 , wherein

the manufacturing method further comprises forming a light-emitting element at the base substrate before formation of the photosensitive unit and the touch structure.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 29, 2022
From: BOE TECHNOLOGY GROUP CO., LTD.
To: BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD.
Reel/Frame 061251/0304 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 22, 2020
From: TANG, GUOQIANG; WANG, YANG; HE, YUEDI
To: CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.; BOE TECHNOLOGY GROUP CO., LTD.
Reel/Frame 053001/0478 →
Priority Claims (1)
CN 201910567976.X · Jun 27, 2019 · national
Continuity (1)
Related Publication 20200411608A1 · Dec 31, 2020