Method of forming a bipolar transistor with a vertical collector contact

1. A method of forming a bipolar transistor with a vertical collector contact, comprising:

providing a transistor comprising a plurality of epitaxial semiconductor layers on a first substrate;

providing a host substrate;

patterning a metal collector contact on the top surface of said host substrate; and

transferring said plurality of epitaxial semiconductor layers from said first substrate directly onto said metal collector contact on said host substrate such that one of said plurality of epitaxial semiconductor layers is in direct contact with said metal collector contact.

2. The method of claim 1 , wherein said plurality of epitaxial semiconductor layers comprises emitter, base, and collector layers, said collector layer on said metal collector contact such that a Schottky contact is formed.

3. The method of claim 2 , wherein said collector layer comprises an N − material.

4. The method of claim 1 , wherein said plurality of epitaxial semiconductor layers comprises emitter, base, collector, and sub-collector layers, said sub-collector layer on said metal collector contact such that an ohmic contact is formed.

5. The method of claim 4 , wherein said sub-collector layer comprises an N ++ material.

6. The method of claim 1 , wherein said plurality of epitaxial semiconductor layers form a heterojunction bipolar transistor (HBT).

7. The method of claim 1 , wherein said transferring comprises transferring local areas of epitaxy from the first substrate to the host substrate.

8. The method of claim 1 , wherein said plurality of epitaxial semiconductor layers on a first substrate further comprises a sacrificial etch layer between said epitaxial semiconductor layers and said first substrate, said transferring comprising:

encapsulating said epitaxial semiconductor layers and said sacrificial etch layer in a polymer;

etching said sacrificial etch layer to release said epitaxial semiconductor layers from said first substrate;

using a stamp to move said released, encapsulated epitaxial semiconductor layers onto said metal collector contact on said host substrate; and

removing said polymer encapsulation.

9. The method of claim 1 , wherein said providing a transistor comprises providing a plurality of said transistors, and said transferring comprises transferring a plurality of said transistors onto a common host substrate.

10. The method of claim 9 , wherein said plurality of said transistors are transferred onto a common metal collector contact which has been patterned on the top surface of said host substrate, thereby forming a multi-finger transistor.

11. The method of claim 9 , wherein said plurality of said transistors are transferred onto respective metal collector contacts which have been patterned on the top surface of said host substrate, thereby forming a multi-finger transistor.

12. The method of claim 1 , wherein said host substrate has a higher thermal conductivity than does said first substrate.

13. The method of claim 12 , wherein said host substrate comprises silicon (Si), silicon carbide (SiC), aluminum nitride (AlN), or diamond.

14. The method of claim 1 , wherein said plurality of epitaxial semiconductor layers comprise Group III-V materials.

15. The method of claim 1 , wherein said plurality of epitaxial semiconductor layers comprises a combination of: indium phosphide (InP), indium gallium arsenide (InGaAs), indium aluminum arsenide (InAlAs), indium arsenide (InAs), and gallium arsenide antimonide (GaAsSb).

16. The method of claim 1 , wherein said plurality of epitaxial semiconductor layers comprises emitter, base, and collector layers, further comprising fabricating electrical contacts to said emitter and base layers after said transferring of said plurality of epitaxial semiconductor layers from said first substrate onto said metal collector contact on said host substrate.

17. The method of claim 1 , wherein said plurality of epitaxial semiconductor layers comprises emitter, base, and collector layers, further comprising fabricating electrical contacts to said emitter and base layers prior to said transferring of said plurality of epitaxial semiconductor layers from said first substrate onto said metal collector contact on said host substrate.

18. The method of claim 1 , wherein said first substrate is the growth substrate for said plurality of epitaxial semiconductor layers.

19. A method of forming a bipolar transistor with a vertical collector contact, comprising:

providing a transistor comprising a plurality of epitaxial semiconductor layers on a first substrate;

providing a host substrate;

patterning a metal collector contact on the top surface of said host substrate; and

transferring said plurality of epitaxial semiconductor layers from said first substrate onto said metal collector contact on said host substrate;

wherein said metal collector contact is embedded in an electrically insulating dielectric layer on the surface of the host substrate such that the surface of the metal collector contact is approximately level with the top surface of the electrically insulating dielectric layer.

20. The method of claim 19 , further comprising:

patterning and etching said electrically insulating dielectric layer to form openings; and

depositing metal into said openings to form said metal collector contact.

21. The method of claim 20 , further comprising planarizing said metal collector contact using chemo-mechanical polishing (CMP).

22. A method of forming a bipolar transistor with a vertical collector contact, comprising:

providing a transistor comprising a plurality of epitaxial semiconductor layers on a first substrate;

providing a host substrate;

patterning a metal collector contact on the top surface of said host substrate; and

transferring said plurality of epitaxial semiconductor layers from said first substrate onto said metal collector contact on said host substrate;

further comprising etching an opening into said top surface of said host substrate and forming said metal collector contact in said opening.