Light-emitting device with crosslinked emissive layer including quantum dots with ligands bonded thereto
A light-emitting device includes an anode, a cathode, and a crosslinked emissive layer disposed between the anode and the cathode in which quantum dots are dispersed. The crosslinked layer includes a crosslinked material and quantum dots dispersed in the crosslinked mater, the quantum dots having ligands respectively bonded to the quantum dots. The quantum dots are distributed unevenly within the crosslinked material. The ligands have a concentration relative to the weight of the quantum dots of 10 to 45 wt %. A method of forming a crosslinked emissive layer of a light-emitting device in which quantum dots are dispersed includes the steps of depositing a mixture on a deposition surface and subjecting at least a portion of the mixture to an activation stimulus to crosslink the cross-linkable material.
1. A light-emitting device, comprising:
an anode;
a cathode; and
a crosslinked emissive layer disposed between the anode and the cathode in which quantum dots are dispersed, the crosslinked emissive layer comprising a crosslinked material and quantum dots dispersed in the crosslinked material, the quantum dots having ligands respectively bonded to the quantum dots;
wherein the quantum dots are distributed unevenly within the crosslinked material;
wherein the ligands have a concentration relative to the weight of the quantum dots in a range of 10 to 45 wt %; and
wherein at least 75% of the quantum dots are located in a half portion of a combined charge transport and emissive layer closest to the cathode.
2. The light-emitting device of claim 1 , wherein the ligands have nucleophilic or electrophilic centers.
3. The light-emitting device of claim 1 , wherein the ligands have a concentration relative to the weight of the quantum dots in a range of 15 to 35 wt %.
4. The light-emitting device of claim 1 , wherein the crosslinked material comprises a hole transport material and the crosslinked emissive layer is the combined charge transport and emissive layer.
5. The light-emitting device of claim 1 , wherein the crosslinked material comprises an electron transport material and the crosslinked emissive layer is the combined charge transport and emissive layer.
6. The light-emitting device of claim 1 , further comprising a hole transport layer disposed between the anode and the crosslinked emissive layer.
7. The light-emitting device of claim 1 , further comprising an electron transport layer disposed between the cathode and the crosslinked emissive layer.
8. A light-emitting device of claim 1 , comprising:
an anode;
a cathode; and
a crosslinked emissive layer disposed between the anode and the cathode in which quantum dots are dispersed, the crosslinked emissive layer comprising a crosslinked material and quantum dots dispersed in the crosslinked material, the quantum dots having ligands respectively bonded to the quantum dots;
wherein the quantum dots are distributed unevenly within the crosslinked material;
wherein the ligands have a concentration relative to the weight of the quantum dots in a range of 10 to 45 wt %; and
wherein the quantum dots form a monolayer of quantum dots at an outer surface of the crosslinked emissive layer closest to the cathode.
9. The light-emitting device of claim 8 , wherein the ligands have nucleophilic or electrophilic centers.
10. The light-emitting device of claim 8 , wherein the ligands have a concentration relative to the weight of the quantum dots in a range of 15 to 35 wt %.
11. The light-emitting device of claim 8 , wherein the crosslinked material comprises a hole transport material and the crosslinked emissive layer is the combined charge transport and emissive layer.
12. The light-emitting device of claim 8 , wherein the crosslinked material comprises an electron transport material and the crosslinked emissive layer is the combined charge transport and emissive layer.
13. The light-emitting device of claim 8 , further comprising a hole transport layer disposed between the anode and the crosslinked emissive layer.
14. The light-emitting device of claim 8 , further comprising an electron transport layer disposed between the cathode and the crosslinked emissive layer.
15. A light-emitting device, comprising:
an anode;
a cathode; and
a crosslinked emissive layer disposed between the anode and the cathode in which quantum dots are dispersed, the crosslinked emissive layer comprising a crosslinked material and quantum dots dispersed in the crosslinked material, the quantum dots having ligands respectively bonded to the quantum dots;
wherein the quantum dots are distributed unevenly within the crosslinked material;
wherein the ligands have a concentration relative to the weight of the quantum dots in a range of 10 to 45 wt %; and
wherein at least 75% of the quantum dots are located in a half portion of a combined charge transport and emissive layer closest to the anode.
16. The light-emitting device of claim 15 , wherein the ligands have nucleophilic or electrophilic centers.
17. The light-emitting device of claim 15 , wherein the ligands have a concentration relative to the weight of the quantum dots in a range of 15 to 35 wt %.
18. The light-emitting device of claim 15 , wherein the crosslinked material comprises a hole transport material and the crosslinked emissive layer is the combined charge transport and emissive layer.
19. The light-emitting device of claim 15 , wherein the crosslinked material comprises an electron transport material and the crosslinked emissive layer is the combined charge transport and emissive layer.
20. The light-emitting device of claim 15 , further comprising a hole transport layer disposed between the anode and the crosslinked emissive layer.