Semiconductor device
A semiconductor device may include a semiconductor substrate, an upper electrode provided on an upper surface of the semiconductor substrate, a lower electrode provided on a lower surface of the semiconductor substrate, and a terminal connected to the upper electrode. The semiconductor substrate may include an active region in which switching elements are provided. The switching elements may be configured to pass a current between the upper electrode and the lower electrode. The active region may include a main region located under the terminal and an external region located outside the main region. The external region may include a low current region. A current density in the low current region may be lower than a current density in the main region in a case where the switching elements in the low current region and the main region are turned on.
1. A semiconductor device, comprising:
a semiconductor substrate;
an upper electrode provided on an upper surface of the semiconductor substrate;
a lower electrode provided on a lower surface of the semiconductor substrate; and
a terminal connected to the upper electrode,
wherein
the semiconductor substrate comprises an active region in which switching elements are provided, the switching elements being configured to pass a current between the upper electrode and the lower electrode,
the active region comprises a main region located under the terminal and an external region located outside the main region,
the external region comprises a low current region, and
a current density in the low current region is lower than a current density in the main region in a case where the switching elements in the low current region and the main region are turned on.
2. The semiconductor device of claim 1 , further comprising a signal electrode provided on the upper surface of the semiconductor substrate and outside the active region,
wherein
in a planar view of the upper surface of the semiconductor substrate, a first direction is defined as a direction from the main region to the signal electrode, and a second direction is defined as a direction perpendicular to the first direction, and
the low current region is located in the first direction relative to the main region and is located in the second direction relative to the signal electrode.
3. The semiconductor device of claim 1 , further comprising a temperature sensor configured to sense a temperature of the main region.
4. The semiconductor device of claim 1 , wherein
the switching elements in the active region each comprise:
a first region of n-type;
a body region of p-type;
a second region of n-type separated from the first region by the body region;
a gate insulating film; and
a gate electrode opposed to the body region via the gate insulating film.
5. The semiconductor device of claim 4 , wherein a p-type impurity concentration in the body region in the low current region is higher than a p-type impurity concentration in the body region in the main region.
6. The semiconductor device of claim 4 , wherein a thickness of the gate insulating film in the low current region is thicker than a thickness of the gate insulating film in the main region.
7. The semiconductor device of claim 4 , wherein an interval between the first region and the second region in the low current region is longer than an interval between the first region and the second region in the main region.
8. The semiconductor device of claim 1 , wherein the semiconductor substrate is constituted of silicon carbide (SiC).