IP Library Granted Patent US 11,326,274
Granted Patent B2
US 11,326,274 · App. 16/910,542 · Granted May 10, 2022

Single crystal growth crucible having a first housing and a second housing, and single crystal production device

Inventor: Yohei Fujikawa (Hikone, JP)
Assignee: SHOWA DENKO K.K.
C30B23/02C23C14/243C30B35/002
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Quick Facts
Patent No.
US 11,326,274
App. No.
16/910,542
Granted
May 10, 2022
Kind
B2
Abstract

Provided is a single crystal growth crucible including a first housing and a second housing, in which a fitting portion between the first housing and the second housing has a first protruding portion, which is provided by protruding inner wall side of the first housing toward the second housing, and a second protruding portion, which is provided by protruding outer wall side of the second housing toward the first housing and covers an outer circumferential surface of the first protruding portion, the first protruding portion is formed such that an outer diameter of a tip portion thereof is larger than that of a base portion thereof in the protruding direction, and the second protruding portion is formed such that an inner diameter of a tip portion thereof is smaller than that of a base portion thereof in the protruding direction, the outer diameter of the tip portion of the first protruding portion is equal to or smaller than the inner diameter of the tip portion of the second protruding portion at room temperature, and the outer diameter of the tip portion of the first protruding portion is larger than the inner diameter of the tip portion of the second protruding portion at a single crystal growth temperature.

Claims (16)

1. A single crystal growth crucible comprising a first housing and a second housing,

wherein a cylindrical space is formed by the first housing and the second housing inside the crucible,

the first housing and the second housing fit together at a fitting portion of the crucible, and the first housing and the second housing are separable from each other,

the first housing includes a first protruding portion which protrudes toward the second housing and is located at an inner wall side thereof,

the second housing includes a second protruding portion which protrudes toward the first housing and is located at an outer wall side thereof and covers an outer circumferential surface of the first protruding portion,

the first housing is configured of a material having a larger linear expansion coefficient than that of the second housing,

the fitting portion is configured of the first protruding portion and the second protruding portion,

the first protruding portion has an outer circumferential surface and an outer diameter of a tip portion of the outer circumferential surface is larger than that of a base portion thereof in the protruding direction,

the second protruding portion has an inner circumferential surface and an inner diameter of a tip portion of the inner circumferential surface is smaller than that of a base portion thereof in the protruding direction,

at room temperature, the outer diameter of the tip portion of the first protruding portion is equal to or smaller than the inner diameter of the tip portion of the second protruding portion, and

at a single crystal growth temperature, the outer diameter of the tip portion of the first protruding portion is larger than the inner diameter of the tip portion of the second protruding portion in a state in which the first housing and the second housing fit together.

2. The single crystal growth crucible according to claim 1 , wherein the outer diameter of the outer circumferential surface of the first protruding portion increases constantly from the base portion toward the tip portion, and the inner diameter of the inner circumferential surface of the second protruding portion decreases constantly from the base portion toward the tip portion.

3. The single crystal growth crucible according to claim 1 , wherein the outer circumferential surface of the first protruding portion includes two circumferential surfaces, which have different outer diameters, at the base portion and at the tip portion, and the inner circumferential surface of the second protruding portion includes two circumferential surfaces, which have different inner diameters, at the base portion and at the tip portion.

4. The single crystal growth crucible according to claim 1 , wherein, at room temperature, a difference between the outer diameter of the tip portion of the first protruding portion and the inner diameter of the tip portion of the second protruding portion is in a range of 0 mm or more and 1 mm or less.

5. The single crystal growth crucible according to claim 1 , wherein a difference between the linear expansion coefficient of the first housing and the linear expansion coefficient of the second housing is in a range of 0.4×10 −6 (1/° C.) or more and 4×10 −6 (1/° C.) or less.

6. A single crystal production device comprising at least the single crystal growth crucible according to claim 1 and a heating unit configured to heat the single crystal growth crucible.

Assignments (3)
CHANGE OF ADDRESS Recorded Feb 14, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066599/0037 →
CHANGE OF NAME Recorded Jun 23, 2023
From: SHOWA DENKO K.K.
To: RESONAC CORPORATION
Reel/Frame 064082/0513 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 24, 2020
From: FUJIKAWA, YOHEI
To: SHOWA DENKO K.K.
Reel/Frame 053028/0132 →
Priority Claims (2)
JP JP2019-118988 · Jun 26, 2019 · national
JP JP2020-074030 · Apr 17, 2020 · national
Continuity (1)
Related Publication 20200407872A1 · Dec 31, 2020