Selective chemical frequency modification of Josephson junction resonators
Techniques regarding selectively tuning the operating frequency of superconducting Josephson junction resonators are provided. For example, one or more embodiments described herein can comprise a method that can include chemically altering a Josephson junction of a Josephson junction resonator via a plasma treatment. The method can also comprise selectively tuning an operating frequency of the Josephson junction resonator based on a property of the plasma treatment.
1. A method, comprising:
selecting a target Josephson junction resonator of a plurality of Josephson junction resonators on a substrate;
chemically altering a Josephson junction of the target Josephson junction resonator via a plasma treatment, without chemically altering a second Josephson junction of the plurality of Josephson junction resonators via the plasma treatment; and
selectively tuning an operating frequency of the target Josephson junction resonator based on a property of the plasma treatment.
2. The method of claim 1 , wherein the property is at least one member selected from the group consisting of a processing time of the plasma treatment, a chemical composition of the plasma treatment, an amount of energy delivered to the Josephson junction by the plasma treatment, and a partial pressure of a gas employed by the plasma treatment.
3. The method of claim 2 , wherein the plasma treatment exposes the Josephson junction to a series of plasmas, and wherein the plasma treatment alters an electrical resistance of the Josephson junction.
4. The method of claim 1 , further comprising:
localizing the plasma treatment to a proximity of the Josephson junction via a plasma beam.
5. The method of claim 1 , further comprising:
depositing a mask layer onto the plurality of Josephson junction resonators, wherein the mask layer comprises a hole that correlates to a position of the Josephson junction, and wherein the mask layer protects the second Josephson junction from the plasma treatment.
6. The method of claim 5 , wherein the mask layer comprises a first surface facing the Josephson junction and a second surface facing the plasma treatment, wherein the first surface is characterized by a chemical composition that absorbs a plasma species of the plasma treatment, and wherein the second surface is characterized by another chemical composition that is inert to the plasma treatment.
7. The method of claim 5 , further comprising:
patterning an electrode at a perimeter of the hole in the mask layer, and
controlling migration of a reactive species of the plasma treatment across the mask layer via operation of the electrode.
8. The method of claim 1 , further comprising:
compressing an inert gasket onto the plurality of Josephson junction resonators, wherein the inert gasket comprises a hole that correlates to a position of the Josephson junction, and wherein the inert gasket seals the second Josephson junction neighboring the Josephson junction from the plasma treatment.
9. A method, comprising:
depositing a mask layer onto a Josephson junction resonator, wherein the mask layer comprises a hole that correlates to a position of a Josephson junction of the Josephson junction resonator;
altering the Josephson junction of the Josephson junction resonator via a plasma treatment; and
selectively tuning an operating frequency of the Josephson junction based on a property of the plasma treatment, wherein the mask layer protects a second Josephson junction from the plasma treatment.
10. The method of claim 9 , wherein the plasma treatment exposes the Josephson junction to a series of plasmas, wherein the plasma treatment alters the electrical resistance of the Josephson junction, and wherein the property is at least one member selected from the group consisting of a processing time of the plasma treatment, a chemical composition of the plasma treatment, an amount of energy delivered to the Josephson junction by the plasma treatment, and a partial pressure of a gas employed by the plasma treatment.
11. The method of claim 9 , further comprising:
localizing the plasma treatment to a proximity of the Josephson junction via a plasma beam.
12. The method of claim 9 , further comprising:
depositing a mask layer onto the Josephson junction resonator, wherein the mask layer comprises a hole that correlates to a position of the Josephson junction, and wherein the mask layer protects a portion of the Josephson junction resonator from the plasma treatment.
13. The method of claim 12 , wherein the mask layer comprises a first surface facing the Josephson junction resonator and a second surface facing the plasma treatment, wherein the first surface is characterized by a chemical composition that absorbs a plasma species of the plasma treatment, and wherein the second surface is characterized by another chemical composition that is inert to the plasma treatment.
14. The method of claim 9 , further comprising:
compressing an inert gasket onto the Josephson junction resonator, wherein the inert gasket comprises a hole that correlates to a position of the Josephson junction, and wherein the inert gasket seals the second Josephson junction neighboring the Josephson junction from the plasma treatment.
15. A method, comprising:
exposing a Josephson junction of a Josephson junction resonator to a plasma treatment, wherein the plasma treatment tunes an operating frequency of the Josephson junction resonator to a target operating frequency by altering an electrical resistance of the Josephson junction; and
shielding a second Josephson junction from the plasma treatment, wherein the second Josephson junction neighbors the Josephson junction of the Josephson junction resonator.
16. The method of claim 15 , wherein the plasma treatment exposes the Josephson junction to a series of plasmas.
17. The method of claim 15 , further comprising:
localizing the plasma treatment to a proximity of the Josephson junction via a plasma beam.