TMD inverted nanowire integration
Embodiments disclosed herein comprise semiconductor devices with two dimensional (2D) semiconductor channels and methods of forming such devices. In an embodiment, the semiconductor device comprises a source contact and a drain contact. In an embodiment, a 2D semiconductor channel is between the source contact and the drain contact. In an embodiment, the 2D semiconductor channel is a shell.
1. A semiconductor device, comprising:
a source contact;
a drain contact laterally spaced apart from the source contact; and
a two dimensional (2D) semiconductor channel laterally between the source contact and the drain contact, wherein the 2D semiconductor channel is a shell.
2. The semiconductor device of claim 1 , wherein an interior of the shell is filled with air.
3. The semiconductor device of claim 1 , wherein an interior of the shell is filled with a dielectric material.
4. The semiconductor device of claim 1 , further comprising:
a gate dielectric over an exterior surface of the shell.
5. The semiconductor device of claim 4 , further comprising:
a gate electrode over the gate dielectric.
6. The semiconductor device of claim 1 , wherein the 2D semiconductor channel comprises a transition metal dichalcogenide (TMD).
7. The semiconductor device of claim 6 , wherein the TMD comprises molybdenum and sulfur, tungsten and sulfur, molybdenum and selenium, tungsten and selenium, molybdenum and tellurium, or tungsten and tellurium.
8. The semiconductor device of claim 1 , wherein the shell has a rectangular cross-section.
9. The semiconductor device of claim 1 , further comprising:
a spacer, wherein the shell passes through the spacer.
10. A method of forming a semiconductor device, comprising:
forming a stack of sacrificial channels between a sacrificial source contact and a sacrificial drain contact, wherein the sacrificial channels are surrounded by a gate stack;
removing the sacrificial source contact to expose a first end of the sacrificial channels;
removing the sacrificial channels to form voids in the gate stack;
replacing the sacrificial drain contact with a seed material;
growing two dimensional (2D) semiconductors from the seed material into the voids, wherein the 2D semiconductors form shells lining the voids;
removing the seed material; and
disposing a replacement source contact and a replacement drain contact at opposite ends of the shells.
11. The method of claim 10 , wherein the gate stack comprises a gate dielectric and a gate electrode.
12. The method of claim 11 , wherein an exterior surface of the shells are in direct contact with the gate dielectric.
13. The method of claim 10 , further comprising:
filling interiors of the shells with a dielectric material.
14. The method of claim 10 , wherein the 2D semiconductors are a transition metal dichalcogenide (TMD).
15. The method of claim 14 , wherein the TMD comprises molybdenum and sulfur, tungsten and sulfur, molybdenum and selenium, tungsten and selenium, molybdenum and tellurium, or tungsten and tellurium.
16. The method of claim 10 , wherein the seed material comprises molybdenum and oxygen or tungsten and oxygen.
17. The method of claim 10 , wherein the 2D semiconductors are grown with a high temperature exposure in a gas comprising selenium, or hydrogen and selenium.
18. An electronic system, comprising:
a board;
an electronic package coupled to the board; and
a die coupled to the electronic package, wherein the die comprises:
a transistor, wherein a channel of the transistor comprises a shell of two dimensional (2D) semiconductor material laterally between a source contact and a drain contact, the drain contact laterally spaced apart from the source contact.
19. The electronic system of claim 18 , wherein a gate dielectric and a gate electrode surround an exterior surface of the shell.
20. The electronic system of claim 18 , wherein the 2D semiconductor material is a transition metal dichalcogenide (TMD) comprising molybdenum and sulfur, tungsten and sulfur, molybdenum and selenium, tungsten and selenium, molybdenum and tellurium, or tungsten and tellurium.