Structure and method to expose memory cells with different sizes

1. A memory device, comprising:

a bottom electrode via surrounded by a lower dielectric layer and disposed over a substrate;

a bottom electrode disposed on the bottom electrode via;

a switching dielectric disposed over the bottom electrode and having a variable resistance;

a top electrode disposed over the switching dielectric;

a sidewall spacer layer extending along sidewalls of the bottom electrode, the switching dielectric, and the top electrode and an upper surface of the lower dielectric layer; and

a lower etch stop layer disposed over the lower dielectric layer and lining an outer sidewall of the sidewall spacer layer;

wherein the sidewall spacer layer separates the lower etch stop layer from the lower dielectric layer;

wherein the bottom electrode has a sidewall aligned with a sidewall of the switching dielectric.

2. The memory device of claim 1 , wherein the lower etch stop layer is made of a material different from the sidewall spacer layer.

3. The memory device of claim 2 , wherein the lower etch stop layer is made of silicon oxynitride and the sidewall spacer layer is made of silicon nitride.

4. The memory device of claim 1 , wherein the lower etch stop layer and the sidewall spacer layer have top surfaces aligned with one another.

5. The memory device of claim 1 ,

wherein the sidewall spacer layer comprises a vertical portion disposed along the sidewalls of the bottom electrode, the switching dielectric, and the top electrode, and a lateral portion disposed along an upper surface of the lower dielectric layer; and

wherein an outer sidewall of the vertical portion and an upper surface of the lateral portion directly contact and is covered by the lower etch stop layer.

6. The memory device of claim 1 , further comprising an upper dielectric layer disposed on the lower etch stop layer and surrounding an upper portion of the sidewall spacer layer.

7. The memory device of claim 6 , wherein top surfaces of the lower etch stop layer and the upper dielectric layer are coplanar.

8. The memory device of claim 6 , wherein top surfaces of the top electrode, the sidewall spacer layer, the lower etch stop layer, and the upper dielectric layer are coplanar.

9. The memory device of claim 6 , wherein the sidewall spacer layer is separated from the upper dielectric layer by the lower etch stop layer.

10. The memory device of claim 6 , wherein the lower etch stop layer is made of silicon oxynitride and the upper dielectric layer is made of silicon oxide.

11. The memory device of claim 1 , further comprising:

a bottom metallization line surrounded by a bottom interlayer dielectric layer and coupled to the bottom electrode through the bottom electrode via; and

a top metallization line surrounded by a top interlayer dielectric layer and directly contacting the top electrode.

12. The memory device of claim 11 , wherein bottom surfaces of the top metallization line and the top interlayer dielectric layer and top surfaces of the top electrode and the lower etch stop layer are coplanar.

13. A memory device, comprising:

a first memory cell stack and a second memory cell stack having different sizes one next to another over a substrate, each of the memory cell stacks comprising a bottom electrode, a switching dielectric over the bottom electrode, a top electrode over the switching dielectric, and a sidewall spacer alongside sidewalls of the first memory cell stack and the second memory cell stack;

a lower etch stop layer disposed over the sidewall spacer and lining an outer sidewall of the first and second memory cell stacks; and

an upper dielectric layer disposed over the lower etch stop layer and continuously between the first and second memory cell stacks;

wherein the sidewall spacer extends continuously between the first memory cell stack and the second memory cell stack;

wherein the bottom electrode has a sidewall aligned with a sidewall of the switching dielectric.

14. The memory device of claim 13 , wherein a top surface of the top electrode is aligned with the top surfaces of the lower etch stop layer and the upper dielectric layer.

15. The memory device of claim 13 , wherein the lower etch stop layer, the sidewall spacer, and the upper dielectric layer have top surfaces aligned with one another.

16. The memory device of claim 13 , further comprising:

a top metallization line and a top electrode via coupling to the top electrode; and

a top interlayer dielectric layer surrounding the top metallization line and the top electrode via;

wherein the top interlayer dielectric layer has a bottom surface aligned with the top surfaces of the lower etch stop layer and the upper dielectric layer.

17. The memory device of claim 13 , wherein the lower etch stop layer extends continuously between the first and second memory cell stacks.

18. The memory device of claim 13 , wherein the sidewall spacer separates from the upper dielectric layer by the lower etch stop layer.

19. The memory device of claim 13 , wherein the lower etch stop layer is made of silicon oxynitride and the sidewall spacer is made of silicon nitride.

20. A memory device, comprising:

a first memory cell stack and a second memory cell stack having different sizes disposed one next to another over a substrate, each of the memory cell stacks comprising a bottom electrode, a switching dielectric over the bottom electrode, a top electrode over the switching dielectric, and a sidewall spacer alongside sidewalls of the bottom electrode, the switching dielectric, and the top electrode;

a lower etch stop layer disposed over the sidewall spacer between and lining the first and second memory cell stacks, wherein the lower etch stop layer covers an upper surface of the sidewall spacer;

an upper dielectric layer over the lower etch stop layer; and

a top interlayer dielectric layer over the upper dielectric layer;

wherein the top interlayer dielectric layer contacts the upper dielectric layer, the lower etch stop layer, and the sidewall spacer.