Semiconductor device with redistribution layers formed utilizing dummy substrates
A semiconductor device with redistribution layers formed utilizing dummy substrates is disclosed and may include forming a first redistribution layer on a first dummy substrate, forming a second redistribution layer on a second dummy substrate, electrically connecting a semiconductor die to the first redistribution layer, electrically connecting the first redistribution layer to the second redistribution layer, and removing the dummy substrates. The first redistribution layer may be electrically connected to the second redistribution layer utilizing a conductive pillar. An encapsulant material may be formed between the first and second redistribution layers. Side portions of one of the first and second redistribution layers may be covered with encapsulant. A surface of the semiconductor die may be in contact with the second redistribution layer. The dummy substrates may be in panel form. One of the dummy substrates may be in panel form and the other in unit form.
1. A method, comprising:
coupling a conductive interconnect structure that protrudes from a bottom side of an upper redistribution structure to a top side of a lower redistribution structure with a semiconductor die between the lower redistribution structure and the upper redistribution structure, wherein at least one of the lower redistribution structure and the upper redistribution structure comprises a coreless multi-layered redistribution structure;
attaching the semiconductor die to the bottom side of the upper redistribution structure prior to coupling the conductive interconnect structure; and
after coupling the conductive interconnect structure, filling a region between the lower redistribution structure and the upper redistribution structure with an encapsulant.
2. The method of claim 1 , wherein attaching the semiconductor die comprises electrically coupling connection structures on a top side of the semiconductor die to conductors of the upper redistribution structure.
3. The method of claim 2 , comprising filling a region between the top side of the semiconductor die and the bottom side of the upper redistribution structure with an underfill that contacts the connection structures, the top side of the semiconductor die, and the bottom side of the upper redistribution structure.
4. The method of claim 3 , wherein filling the region with the encapsulant results in the encapsulant contacting the semiconductor die, the bottom side of the upper redistribution structure, the top side of the lower redistribution structure, and the underfill.
5. The method of claim 1 , wherein an uppermost portion of the encapsulant is higher above the lower redistribution structure than an uppermost portion of the semiconductor die.
6. The method of claim 1 , wherein the conductive interconnect structure comprises a copper portion and a solder portion, each laterally offset and vertically aligned with a sidewall of the semiconductor die.
7. The method of claim 1 , wherein:
the upper redistribution structure comprises
a first dielectric layer comprising a lower side, an upper side, and a first opening that extends from the lower side of the first dielectric layer toward the upper side of the first dielectric layer; and
a first conductive layer on the lower side of the first dielectric layer, wherein the first conductive layer extends into the first opening and toward the upper side of the first dielectric layer; and
the lower redistribution structure comprises
a second dielectric layer comprising an upper side, a lower side, and a second opening that extends from the upper side of the second dielectric layer toward the lower side of the second dielectric layer; and
a second conductive layer on the upper side of the second dielectric layer, wherein the second conductive layer extends into the second opening and toward the lower side of the second dielectric layer.
8. The method of claim 2 , wherein:
the upper redistribution structure comprises
a first dielectric layer comprising a lower side, an upper side, and a first opening that extends from the lower side of the first dielectric layer toward the upper side of the first dielectric layer; and
a first conductive layer on the lower side of the first dielectric layer, wherein the first conductive layer extends into the first opening and toward the upper side of the first dielectric layer; and
the lower redistribution structure comprises
a second dielectric layer comprising an upper side, a lower side, and a second opening that extends from the upper side of the second dielectric layer toward the lower side of the second dielectric layer; and
a second conductive layer on the upper side of the second dielectric layer, wherein the second conductive layer extends into the second opening and toward the lower side of the second dielectric layer.
9. The method of claim 1 , comprising removing an upper dummy substrate from a top side of the upper redistribution structure.
10. The method of claim 1 , comprising removing a lower dummy substrate from a bottom side of the lower redistribution structure.
11. The method of claim 1 , wherein:
the lower redistribution structure comprises a lower coreless multi-layered redistribution structure;
the upper redistribution structure comprises an upper coreless multi-layered redistribution structure; and
the method comprises
removing a lower dummy substrate from the lower coreless multi-layered redistribution structure of the lower redistribution structure; and
removing a upper dummy substrate from the upper coreless multi-layered redistribution structure of the upper redistribution structure.
12. The method of claim 1 , wherein the top side of the upper redistribution structure provides an uppermost portion of a semiconductor package.