Display device
The purpose of the present invention is to decrease the resistance of the drain and source in the TFT of the oxide semiconductor as well as to have stable Vd-Id characteristics of the TFT. The structure of the present invention is as follows: A display device having plural pixels including thin film transistors (TFT) having oxide semiconductor films comprising: a gate insulating film formed on the oxide semiconductor film, an aluminum oxide film formed on the gate insulating film, a gate electrode formed on the aluminum oxide film, a side spacer formed on both sides of the gate electrode, and an interlayer insulating film formed on the gate electrode, the side spacer, a drain and a source, wherein in a plan view, and in a direction from the drain to the source, a length of the gate electrode is shorter than a length of the aluminum oxide film.
1. A display device having plural pixels including thin film transistors (TFT) having oxide semiconductor films comprising:
a gate insulating film formed on the oxide semiconductor film,
an aluminum oxide film formed on the gate insulating film,
a gate electrode formed on the aluminum oxide film,
a side spacer formed on both sides of the gate electrode, and
an interlayer insulating film formed on the gate electrode, the side spacer, a drain and a source,
wherein in a plan view, and in a direction from the drain to the source, a length of the gate electrode is shorter than a length of the aluminum oxide film,
a metal that constitutes the gate electrode covers the side surface of the side spacer and extends to a top of the side spacer.
2. The display device according to claim 1 ,
wherein a length, in the direction from the drain to the source, of the metal that constitutes the gate electrode on the top of the side spacer is 0.1 microns or more.
3. A display device having plural pixels including thin film transistors (TFT) having oxide semiconductor films comprising:
a gate insulating film formed on the oxide semiconductor film,
an aluminum oxide film formed on the gate insulating film,
a gate electrode formed on the aluminum oxide film,
a side spacer formed on both sides of the gate electrode, and
an interlayer insulating film formed on the gate electrode, the side spacer, a drain and a source,
wherein in a plan view, and in a direction from the drain to the source, a length of the gate electrode is shorter than a length of the aluminum oxide film,
the oxide semiconductor film has a channel, which is formed between the drain and the source,
an intermediate region is formed between the channel and the drain and between the channel and the source,
a gate insulating film is formed on the channel and the intermediate region of the oxide semiconductor film,
the gate electrode is formed on the aluminum oxide film above the channel, and
a content of hydrogen in the oxide semiconductor film, is: in the channel<in the intermediate region<in the drain or the source.
4. The display device according to claim 3 ,
wherein a content of hydrogen in the interlayer insulating film is higher than a content of hydrogen in the side spacer.
5. The display device according to claim 3 ,
wherein a content of hydrogen in the oxide semiconductor film, is: in the channel<in the intermediate region<in the drain or the source.
6. The display device according to claim 3 ,
wherein the channel has a channel length and a channel width,
provided a side of the side spacer that is in contact with the aluminum oxide film is a bottom, and a side opposite to the bottom is a top, a length of the bottom in the channel length direction is longer than a length of the top in the channel length direction.
7. A display device having plural pixels including thin film transistors (TFT) having oxide semiconductor films comprising:
a gate insulating film formed on the oxide semiconductor film,
an aluminum oxide film formed on the gate insulating film,
a gate electrode formed on the aluminum oxide film,
a side spacer formed on both sides of the gate electrode, and
an interlayer insulating film formed on the gate electrode, the side spacer, a drain and a source,
wherein in a plan view, and in a direction from the drain to the source, a length of the gate electrode is shorter than a length of the aluminum oxide film, and
a content of hydrogen in the interlayer insulating film is higher than a content of hydrogen in the side spacer.
8. The display device according to claim 7 ,
wherein a height of the side spacer is 100 to 500 nm.
9. The display device according to claim 7 ,
wherein a side surface, which contacts with the interlayer insulating film, of the side spacer is a tapered surface.
10. The display device according to claim 7 ,
wherein the display device is an organic EL display device.
11. The display device according to claim 7 ,
wherein the display device is a liquid crystal display device.
12. The display device according to claim 7 ,
wherein the drain and the source of the oxide semiconductor film are covered by the gate insulating film, and the gate insulating film contacts with the interlayer insulating film.
13. The display device according to claim 12 ,
wherein a layer of the interlayer insulating film that is directly in contact with the gate insulating film is made of silicon nitride.
14. The display device according to claim 7 ,
wherein the oxide semiconductor film has a channel, which is formed between the drain and the source,
an intermediate region is formed between the channel and the drain and between the channel and the source,
a gate insulating film is formed on the channel and the intermediate region of the oxide semiconductor film, and
the gate electrode is formed on the aluminum oxide film above the channel.
15. The display device according to claim 14 ,
wherein, in a plan view, the channel is formed at a place where the gate electrode contacts with the aluminum oxide film and overlaps with the oxide semiconductor film, and
the intermediate region is formed at a place where the side spacer contacts with the aluminum oxide film and overlaps with the oxide semiconductor film.
16. The display device according to claim 14 ,
wherein the interlayer insulating film is directly in contact with the drain and the source of the oxide semiconductor film.
17. The display device according to claim 16 ,
wherein a layer of the interlayer insulating film that is directly in contact with the drain and the source is made of silicon nitride.
18. The display device according to claim 14 ,
wherein the channel has a channel length and a channel width, provided a side of the side spacer that is in contact with the aluminum oxide film is a bottom, and a side opposite to the bottom is a top, a length of the bottom in the channel length direction is longer than a length of the top in the channel length direction.
19. The display device according to claim 18 ,
wherein the length of the bottom of the side spacer in the channel length direction is by 0.3 microns or more longer than the length of the top of the side spacer in the channel length direction.