Side mode suppression for extended c-band tunable laser
A method for improving wide-band wavelength-tunable laser. The method includes configuring a gain region between a first facet and a second facet and crosswise a PN-junction with an active layer between P-type cladding layer and N-type cladding layer. The method further includes coupling a light excited in the active layer and partially reflected from the second facet to pass through the first facet to a wavelength tuner configured to generate a joint interference spectrum with multiple modes separated by a joint-free-spectral-range (JFSR). Additionally, the method includes configuring the second facet to have reduced reflectivity for increasing wavelengths. Furthermore, the method includes reconfiguring the gain chip with an absorption layer near the active layer to induce a gain loss for wavelengths shorter than a longest wavelength associated with a short-wavelength side mode. Moreover, the method includes outputting amplified light at a basic mode via the second facet.
1. A reflective semiconductor optical amplifier comprising:
a gain chip comprising:
a diode formed by a first layer doped with a first type of dopant and a second layer doped with a second type of dopant disposed between an antireflective first facet and a partially reflective second facet, wherein the partially reflective second facet has a tilted antireflective coating with light reflectivity that decreases with increasing wavelength;
an active layer formed between the first layer and the second layer and configured to generate light that is reflected by the partially reflective second facet; and
an absorption layer formed in the second layer near the active layer; and
a tuner configured to:
receive through the antireflective first facet the light reflected by the partially reflective second facet; and
output peaks separated by a predetermined wavelength range to the gain chip through the antireflective first facet;
wherein the gain chip outputs a first peak as a laser light through the partially reflective second facet while the absorption layer suppresses a second peak of a lower wavelength than the first peak and the partially reflective second facet suppresses a third peak of a greater wavelength than the first peak.
2. The reflective semiconductor optical amplifier of claim 1 wherein the first and second types of dopants have opposite polarities.
3. The reflective semiconductor optical amplifier of claim 1 wherein the light generated by the active layer is amplified between the partially reflective second facet and the antireflective first facet before exiting through the antireflective first facet.
4. The reflective semiconductor optical amplifier of claim 1 wherein the partially reflective second facet has low-reflection characteristics providing decreased reflectivity for longer wavelengths than the first peak to suppress the third peak.
5. The reflective semiconductor optical amplifier of claim 1 wherein the absorption layer induces a loss in a gain profile of the gain chip for shorter wavelengths than the first peak to suppress the second peak.
6. The reflective semiconductor optical amplifier of claim 1 wherein the absorption layer has a bandgap set to less than a predetermined wavelength to absorb light with wavelengths shorter than the predetermined wavelength and to suppress the second peak.
7. The reflective semiconductor optical amplifier of claim 1 wherein the absorption layer has a bandgap set to less than a predetermined wavelength to absorb light with wavelengths shorter than the predetermined wavelength and to modify a gain profile of the gain chip for shorter wavelengths than the first peak to suppress the second peak.
8. The reflective semiconductor optical amplifier of claim 1 wherein the active layer comprises a quantum well that induces a laser that is amplified between the partially reflective second facet and the antireflective first facet with a gain at a predetermined wavelength.
9. The reflective semiconductor optical amplifier of claim 1 wherein the tuner comprises ring-shaped waveguides that output the peaks separated by the predetermined wavelength range, and wherein the predetermined wavelength range is determined by diameters of the ring-shaped waveguides.
10. The reflective semiconductor optical amplifier of claim 9 further comprising respective heaters to control temperatures of the ring-shaped waveguides and to tune the first peak to a single wavelength.
11. The reflective semiconductor optical amplifier of claim 10 further comprising a wavelength locker coupled to the tuner and the antireflective first facet to lock the first peak to the single wavelength.
12. The reflective semiconductor optical amplifier of claim 11 wherein the wavelength locker fine tunes the first peak to the single wavelength based on a temperature around the wavelength locker.