External cavity laser with multiple materials micro-ring reflectors
There is provided an external cavity laser, including: a photonic integrated platform including a gain chip providing a gain medium and at least one reflector chip, the photonic integrated platform including first and second functional layers made of different materials; a resonant cavity optically coupled to the gain medium and including a first and a second micro-ring resonators (MRR) in a Vernier configuration, the first MRR and second MRR extending within respective ones of the first and second functional layers made of different materials and having corresponding group indices, the first and second MRRs having different radii selected in view of said corresponding group indices; and a tuning mechanism for tuning a spectral response of at least one of the first and second MRR.
1 . An external cavity laser, comprising:
a photonic integrated platform comprising a gain chip providing a gain medium and at least one reflector chip;
a resonant cavity optically coupled to the gain medium and comprising a first and a second micro-ring resonators (MRR) in a Vernier configuration provided in the at least one reflector chip, the first MRR and second MRR being made of different materials and having corresponding different group indices, the first and second MRRs having different radii selected in view of said corresponding different group indices, wherein the at least one reflector chip consists of a monolithic reflector chip integrating first and second functional layers respectively comprising the first and second MRRs;
a tuning mechanism for tuning a spectral response of at least one of the first and second MRR; and
a waveguide structure defining said resonant cavity, the waveguide structure comprising:
the first and second MRRs;
one or more waveguide branches extending in each functional layer; and
one or more optical vias allowing light to travel between the functional layers of the monolithic reflector chip.
2 . The external cavity laser according to claim 1 , wherein the gain chip comprises a semiconductor optical amplifier.
3 . The external cavity laser according to claim 1 , wherein the gain medium is quantum well-based, quantum wire-based, quantum dot-based or quantum dash-based.
4 . The external cavity laser according to claim 1 , wherein each of the at least one reflector chip comprises a substrate and a cladding extending over the substrate, each of the first and second MRRs being embedded in the cladding of one of said at least one reflector chip.
5 . The external cavity laser according to claim 4 , wherein the substrate of the reflector chip is made of Si, and the cladding of the reflector chip is made of SiO 2 .
6 . The external cavity laser according to claim 1 , wherein the material of the first MRR is Si, and the material of the second MRR is SiN.
7 . The external cavity laser according to claim 1 , wherein the materials of the first and second MRRs are each selected from the list consisting of Silicon (Si), Silicon Nitride (SIN), Indium Phosphide (InP), Gallium Arsenide (GaAs), Gallium Nitride (GaN), Aluminum Nitride (AIN), Indium Gallium Arsenide Phosphide (InGaAsP), Indium Gallium Arsenide Antimonide (InGaAsSb), Mercury Cadmium Telluride (HgCdTe), Gallium Nitride (GaN), Aluminum Nitride (AIN), Gallium Arsenide (GaAs), Aluminum Gallium Arsenide (AIGaAs) Aluminum Nitride (AIN), QXP, and Lithium Niobate (LiNbO3), Barium Titanate BaTiO3 (BTO), or binary, ternary, and quaternary compounds and alloys thereof.
8 . The external cavity laser according to claim 1 , wherein a ratio of the radi of the first and second MRRs is proportional to a ratio of their group indices.
9 . The external cavity laser according to claim 8 , wherein the ratio of the radii of the first and second MRRs substantially corresponds to:
R
2
R
1
≈
(
m
-
1
)
m
n
g
1
n
g
2
,
wherein R 1 is the radius of the first MRR, R 2 is the radius of the second MRR, n g1 is the group index of the material of the first MRR, n g2 is the group index of the material of the second MRR, and m is a tuning enhancement factor.
10 . The external cavity laser according to claim 8 , wherein the ratio of the radii of the first and second MRRs substantially corresponds to:
R
2
R
1
≈
(
m
-
1
)
N
×
m
n
g
1
n
g
2
,
wherein R 1 is the radius of the first MRR, R 2 is the radius of the second MRR, ng 1 is the group index of the material of the first MRR, n g2 is the group index of the material of the second MRR, m is a tuning enhancement factor and N is a reduction factor associate with the material of the first MRR.
11 . The external cavity laser according to claim 1 , wherein the resonant cavity has a Fabry-Perot configuration and comprises a fixed cavity reflector optically coupled to one extremity of the gain medium, the first and second MRRs forming a tunable cavity reflector optically coupled to an extremity of the gain medium opposite the fixed cavity reflector.
12 . The external cavity laser according to claim 11 , wherein the fixed cavity reflector comprises a layer of reflective material extending along a surface of the gain chip.
13 . The external cavity laser according to claim 1 , the waveguide structure comprising:
a coupler separating light into clockwise and counterclockwise portions travelling in opposite directions through said waveguide structure.
14 . The external cavity laser according to claim 13 , wherein the waveguide structure comprises a loop mirror closing a feedback circuit in the resonant cavity.
15 . The external cavity laser according to claim 14 , wherein one of the first and second MRRs is inside the loop mirror.
16 . The external cavity laser according to claim 13 , wherein at least one of the first and second MRRs comprises a plurality of MRR components.
17 . The external cavity laser according to claim 13 , wherein at least one of the first and second MRRs has a variable width section.
18 . The external cavity laser according to claim 1 , further comprising a frequency-stabilization mechanism, the frequency-stabilization comprising:
a monitoring photodetector configured for measuring an estimated optical power outputted by the external cavity laser;
a first heater being thermally connected with the second MRR to tune a resonance of the second MRR, based on the estimated optical power; and
a second heater being thermally connected with the first MRR to tune a resonance of the first MRR, based on the estimated optical power.
19 . The external cavity laser according to claim 18 , wherein a distance between the first heater and the second MRR is smaller than a distance between the second heater and the first MRR.
20 . The external cavity laser according to claim 18 , further comprising a 90-degree coupler optically coupled with the first MRR and the second MRR to measure a phase difference between the external laser cavity's outputs.
21 . The external cavity laser according to claim 18 , wherein the first heater and the second heater are respectively monolithically integrated with the second MRR and the first MRR.
22 . The external cavity laser according to claim 18 , further comprising a plurality of temperature sensors positioned between the gain chip and the resonant cavity, the plurality of temperature sensors being configured to monitor a thermal wave propagation, wherein the first heater and the second heater are adjusted based on the monitored thermal wave propagation.
23 . The external cavity laser according to claim 1 , further comprising auxiliary temperature sensors configured to measure external thermal perturbations.